JPS6453560A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6453560A JPS6453560A JP21068187A JP21068187A JPS6453560A JP S6453560 A JPS6453560 A JP S6453560A JP 21068187 A JP21068187 A JP 21068187A JP 21068187 A JP21068187 A JP 21068187A JP S6453560 A JPS6453560 A JP S6453560A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- field oxide
- silicide layer
- platinum silicide
- dicing line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Formation Of Insulating Films (AREA)
- Dicing (AREA)
Abstract
PURPOSE:To prevent cracks which are generated during a dicing process from affecting a chip product, by leaving an oxide film on a dicing line to be etched with plasma, and forming a platinum silicide layer between the chip product and the oxide film on the dicing line. CONSTITUTION:A semiconductor device comprises a silicon substrate or epitaxial layer 1, a field oxide film 3, a platinum silicide layer 3, and a nitride film 4 for passivation. Now, though the field oxide film 2 which is formed on the silicon substrate or epitaxial layer 1 is etched during contact holes being formed, only the part of the field oxide film 2 between the field oxide film 2 on the dicing line and each the adjacent chip product is etched, with the part of the field oxide film 2 on the dicing line being still left. The platinum silicide layer 3 then coats the contact section, and the nitride film 4 for passivation is thereafter deposited over the substrate body. Moreover, when the field oxide film is formed on the both sides of the platinum silicide layer 3 to provide an oxide film isolated structure, the field oxide films absorb all of cracks which are generated during dicing process; therefore, the cracks are effectively prevented from affecting the chip products.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21068187A JPS6453560A (en) | 1987-08-25 | 1987-08-25 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21068187A JPS6453560A (en) | 1987-08-25 | 1987-08-25 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6453560A true JPS6453560A (en) | 1989-03-01 |
Family
ID=16593348
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21068187A Pending JPS6453560A (en) | 1987-08-25 | 1987-08-25 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6453560A (en) |
-
1987
- 1987-08-25 JP JP21068187A patent/JPS6453560A/en active Pending
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