JPS6454330U - - Google Patents
Info
- Publication number
- JPS6454330U JPS6454330U JP14811187U JP14811187U JPS6454330U JP S6454330 U JPS6454330 U JP S6454330U JP 14811187 U JP14811187 U JP 14811187U JP 14811187 U JP14811187 U JP 14811187U JP S6454330 U JPS6454330 U JP S6454330U
- Authority
- JP
- Japan
- Prior art keywords
- divided
- crucible
- pedestal
- graphite
- convex protrusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910002804 graphite Inorganic materials 0.000 claims description 5
- 239000010439 graphite Substances 0.000 claims description 5
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 239000010453 quartz Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
第１図は、本考案の一実施態様を示す黒鉛製分
割るつぼの平面図、第２図は第１図のＡ−Ａ′線
による縦断面図、第３図は一分割片の斜視図、第
４図は本考案の他の実施態様を示す黒鉛分割るつ
ぼの縦断面図、及び第５図は従来の黒鉛製るつぼ
の縦断面図を示す。 １，１１……分割るつぼ、２，２′，２１，２
１′……分割片、３，３１……受台、４……受け
部、５……突起部、６……溝。
割るつぼの平面図、第２図は第１図のＡ−Ａ′線
による縦断面図、第３図は一分割片の斜視図、第
４図は本考案の他の実施態様を示す黒鉛分割るつ
ぼの縦断面図、及び第５図は従来の黒鉛製るつぼ
の縦断面図を示す。 １，１１……分割るつぼ、２，２′，２１，２
１′……分割片、３，３１……受台、４……受け
部、５……突起部、６……溝。
Claims (1)
- 受台と複数個の分割片とからなり、内部に石英
製るつぼを収納するシリコン、ゲルマニウム等の
半導体物質単結晶引上用黒鉛製分割るつぼにおい
て、受台の中央に逆凸状の突起部を設け、かつ分
割片の下部に該逆凸状の突起部との嵌合溝を設け
てなる黒鉛製分割るつぼ。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14811187U JPH0538059Y2 (ja) | 1987-09-30 | 1987-09-30 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14811187U JPH0538059Y2 (ja) | 1987-09-30 | 1987-09-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6454330U true JPS6454330U (ja) | 1989-04-04 |
| JPH0538059Y2 JPH0538059Y2 (ja) | 1993-09-27 |
Family
ID=31419130
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14811187U Expired - Lifetime JPH0538059Y2 (ja) | 1987-09-30 | 1987-09-30 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0538059Y2 (ja) |
-
1987
- 1987-09-30 JP JP14811187U patent/JPH0538059Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0538059Y2 (ja) | 1993-09-27 |