JPS6455876A - Thin film photovoltaic device - Google Patents
Thin film photovoltaic deviceInfo
- Publication number
- JPS6455876A JPS6455876A JP62213335A JP21333587A JPS6455876A JP S6455876 A JPS6455876 A JP S6455876A JP 62213335 A JP62213335 A JP 62213335A JP 21333587 A JP21333587 A JP 21333587A JP S6455876 A JPS6455876 A JP S6455876A
- Authority
- JP
- Japan
- Prior art keywords
- photovoltaic element
- film
- semiconductor layer
- rear surface
- light transmitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 4
- 239000011521 glass Substances 0.000 abstract 3
- 239000004020 conductor Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- 239000007767 bonding agent Substances 0.000 abstract 1
- 238000010894 electron beam technology Methods 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 239000011737 fluorine Substances 0.000 abstract 1
- 229910052731 fluorine Inorganic materials 0.000 abstract 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 230000005693 optoelectronics Effects 0.000 abstract 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 abstract 1
- 230000002463 transducing effect Effects 0.000 abstract 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
Landscapes
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To improve optoelectronic transducing efficiency, by overlapping a first photovoltaic element, in which a transparent conductor film that is formed on a light transmitting substrate, an amorphous semiconductor layer and a light transmitting rear surface electrode are sequentially laminated, and a second photovoltaic element, in which a transparent conductor film, a I-III-VI semiconductor layer and a rear surface electrode are sequentially laminated. CONSTITUTION:A fluorine added SnO2 film 2 is formed on a glass substrate 1. Amorphous semiconductor layers 3 are formed in the order of a P-type layer, an I-type layer and an N-type layer on the film 2 by a glow discharge method. Then, as a rear surface electrode 4, an indium tin oxide film is formed on the amorphous semiconductor layer 3 by an electron beam evaporating method. A photovoltaic element which is formed by above described layers is made to be a first photovoltaic element 5. Meanwhile, on a glass substrate 6, a molybdenum layer 7, a CuInSe2 film as a I-III-VI semiconductor layer 8 and an In added ZnO film 9 are formed. A photovoltaic element which is formed of said layers is made to be a second photovoltaic element 10. The elements are heat-treated at 250 deg.C. Said first and second photovoltaic elements are bonded with light transmitting bonding agent 11 comprising polyvinyl butyral at both sides, i.e., the opposite sides of the glass substrates.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62213335A JPS6455876A (en) | 1987-08-26 | 1987-08-26 | Thin film photovoltaic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62213335A JPS6455876A (en) | 1987-08-26 | 1987-08-26 | Thin film photovoltaic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6455876A true JPS6455876A (en) | 1989-03-02 |
Family
ID=16637451
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62213335A Pending JPS6455876A (en) | 1987-08-26 | 1987-08-26 | Thin film photovoltaic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6455876A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63202345A (en) * | 1987-02-19 | 1988-08-22 | Rheon Autom Mach Co Ltd | Weighing of mixture of solid material and injecting said mixture to another material |
| JPH01283974A (en) * | 1988-05-11 | 1989-11-15 | Mitsubishi Heavy Ind Ltd | Thin film laminated solar battery |
| WO2008102809A1 (en) * | 2007-02-23 | 2008-08-28 | Lintec Corporation | Translucent solar cell module, its manufacturing method, and solar cell panel |
| US8610129B2 (en) | 2008-01-15 | 2013-12-17 | Samsung Electronics Co., Ltd. | Compound semiconductor image sensor |
-
1987
- 1987-08-26 JP JP62213335A patent/JPS6455876A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63202345A (en) * | 1987-02-19 | 1988-08-22 | Rheon Autom Mach Co Ltd | Weighing of mixture of solid material and injecting said mixture to another material |
| JPH01283974A (en) * | 1988-05-11 | 1989-11-15 | Mitsubishi Heavy Ind Ltd | Thin film laminated solar battery |
| WO2008102809A1 (en) * | 2007-02-23 | 2008-08-28 | Lintec Corporation | Translucent solar cell module, its manufacturing method, and solar cell panel |
| JP5415252B2 (en) * | 2007-02-23 | 2014-02-12 | リンテック株式会社 | Translucent solar cell module, method for manufacturing the same, and solar cell panel |
| US8610129B2 (en) | 2008-01-15 | 2013-12-17 | Samsung Electronics Co., Ltd. | Compound semiconductor image sensor |
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