JPS6457666U - - Google Patents
Info
- Publication number
- JPS6457666U JPS6457666U JP15071187U JP15071187U JPS6457666U JP S6457666 U JPS6457666 U JP S6457666U JP 15071187 U JP15071187 U JP 15071187U JP 15071187 U JP15071187 U JP 15071187U JP S6457666 U JPS6457666 U JP S6457666U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- cap
- magneto
- crystal plate
- optic crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 4
- 230000005469 synchrotron radiation Effects 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
Description
第１図は本考案の実施例の構造を示す図、第２
図は第１図の実施例に用いる磁気光学結晶板の吸
収特性フアラデー回転特性の波長依存性を示す図
、第３図〜第４図は第１図の本考案の実施例の半
導体レーザ装置２００を利用した光ピツクアツプ
及び半通信用光源部の構成を示す図、第５図ａ〜
ｃは本考案の実施例に用いる永久磁石の形状を示
す図である。
図において、１……ステム、３……キヤツプ、
５……永久磁石、６……コリメートレンズ、７…
…ハーフミラー、８……対物レンズ、９……光デ
イスク、１０……ロツドレンズ、１１……光フア
イバ、１２……半導体レーザ、１３……受光光学
系、１００……磁気光学結晶板、１０１……モニ
タ用光検出器、１０２……ヒートシング、１０４
……窓部、２００……半導体レーザ装置である。
Figure 1 is a diagram showing the structure of an embodiment of the present invention, Figure 2 is a diagram showing the structure of an embodiment of the present invention.
The figure shows the wavelength dependence of the absorption characteristic Faraday rotation characteristic of the magneto-optic crystal plate used in the embodiment of FIG. 1, and FIGS. 3 to 4 show the semiconductor laser device 200 of the embodiment of the present invention shown in FIG. A diagram showing the configuration of a light source section for optical pickup and semi-communication using
c is a diagram showing the shape of a permanent magnet used in an embodiment of the present invention. In the figure, 1...stem, 3...cap,
5...Permanent magnet, 6...Collimating lens, 7...
... Half mirror, 8 ... Objective lens, 9 ... Optical disk, 10 ... Rod lens, 11 ... Optical fiber, 12 ... Semiconductor laser, 13 ... Light receiving optical system, 100 ... Magneto-optic crystal plate, 101 ... ... Monitoring photodetector, 102 ... Heat sink, 104
. . . Window portion, 200 . . . A semiconductor laser device.
Claims (1)
持具と、前記半導体レーザの放射光を透過させる
窓を有し、前記支持具に取付けて半導体レーザを
気密封入するキヤツプと、該キヤツプの窓部また
はその近傍の前記放射光の光路中に配置された磁
気光学結晶板を有し、該磁気光学結晶板に対して
前記放射光が透過する方向に磁場を印加する手段
を前記キヤツプの内部に配したことを特徴とする
半導体レーザ装置。 a semiconductor laser; a support for supporting the semiconductor laser; a cap that has a window that transmits light emitted from the semiconductor laser and that is attached to the support to hermetically encapsulate the semiconductor laser; A magneto-optic crystal plate is disposed in the optical path of the synchrotron radiation in the vicinity, and means for applying a magnetic field to the magneto-optic crystal plate in a direction in which the synchrotron radiation passes through the cap is disposed inside the cap. A semiconductor laser device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15071187U JPS6457666U (en) | 1987-09-30 | 1987-09-30 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15071187U JPS6457666U (en) | 1987-09-30 | 1987-09-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6457666U true JPS6457666U (en) | 1989-04-10 |
Family
ID=31424098
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15071187U Pending JPS6457666U (en) | 1987-09-30 | 1987-09-30 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6457666U (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60219787A (en) * | 1984-04-16 | 1985-11-02 | Matsushita Electric Ind Co Ltd | Semiconductor laser device with photo-isolator |
| JPS6170516A (en) * | 1984-09-14 | 1986-04-11 | Hitachi Ltd | Semiconductor laser module with optical isolator |
-
1987
- 1987-09-30 JP JP15071187U patent/JPS6457666U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60219787A (en) * | 1984-04-16 | 1985-11-02 | Matsushita Electric Ind Co Ltd | Semiconductor laser device with photo-isolator |
| JPS6170516A (en) * | 1984-09-14 | 1986-04-11 | Hitachi Ltd | Semiconductor laser module with optical isolator |