JPS6457672A - High breakdown voltage mos semiconductor device - Google Patents
High breakdown voltage mos semiconductor deviceInfo
- Publication number
- JPS6457672A JPS6457672A JP62213932A JP21393287A JPS6457672A JP S6457672 A JPS6457672 A JP S6457672A JP 62213932 A JP62213932 A JP 62213932A JP 21393287 A JP21393287 A JP 21393287A JP S6457672 A JPS6457672 A JP S6457672A
- Authority
- JP
- Japan
- Prior art keywords
- breakdown voltage
- semiconductor device
- drain
- oxide film
- high breakdown
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015556 catabolic process Effects 0.000 title abstract 5
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 229910021332 silicide Inorganic materials 0.000 abstract 3
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- DFJQEGUNXWZVAH-UHFFFAOYSA-N bis($l^{2}-silanylidene)titanium Chemical compound [Si]=[Ti]=[Si] DFJQEGUNXWZVAH-UHFFFAOYSA-N 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910021352 titanium disilicide Inorganic materials 0.000 abstract 1
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To improve electric characteristics and reliability, to increase the degree of freedom on the design of pattern, and to contrive improvement in miniaturization and the yield of production of the title semiconductor device by a method wherein the surface of the source, drain and gate electrode of a high breakdown voltage transistor is constituted by a metal or its silicide and the like. CONSTITUTION:A logic part 130, consisting of the MOS transistor having relatively low drain breakdown voltage, and an output part 120 consisting of the MOS transistor having relatively high drain breakdown voltage are arranged on the same substrate 101. In the semiconductor device of this kind, a selective oxide film thicker than a gate oxide film 108 is buried in both ends of the channel part of the high breakdown voltage transistor, and impurity layers 105 and 106 of the same conductivity type, having the density lower than that of a drain region 113 to be used to lead out an electrode, are provided under the selective oxide film. Besides, the surface of a source region 112, a drain region 113 and a gate electrode 110 are constituted with a metal or silicides 125 and 126. A titanium disilicide or a polycide, for example, is used as the silicides 125 and 126 above-mentioned.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62213932A JPS6457672A (en) | 1987-08-27 | 1987-08-27 | High breakdown voltage mos semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62213932A JPS6457672A (en) | 1987-08-27 | 1987-08-27 | High breakdown voltage mos semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6457672A true JPS6457672A (en) | 1989-03-03 |
Family
ID=16647430
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62213932A Pending JPS6457672A (en) | 1987-08-27 | 1987-08-27 | High breakdown voltage mos semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6457672A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6208195B1 (en) | 1991-03-18 | 2001-03-27 | Integrated Device Technology, Inc. | Fast transmission gate switch |
| US6215350B1 (en) | 1991-03-18 | 2001-04-10 | Integrated Device Technology, Inc. | Fast transmission gate switch |
-
1987
- 1987-08-27 JP JP62213932A patent/JPS6457672A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6208195B1 (en) | 1991-03-18 | 2001-03-27 | Integrated Device Technology, Inc. | Fast transmission gate switch |
| US6215350B1 (en) | 1991-03-18 | 2001-04-10 | Integrated Device Technology, Inc. | Fast transmission gate switch |
| US6556063B2 (en) | 1991-03-18 | 2003-04-29 | Integrated Device Technology, Inc. | Fast transmission gate switch |
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