JPS646052U - - Google Patents
Info
- Publication number
- JPS646052U JPS646052U JP9938487U JP9938487U JPS646052U JP S646052 U JPS646052 U JP S646052U JP 9938487 U JP9938487 U JP 9938487U JP 9938487 U JP9938487 U JP 9938487U JP S646052 U JPS646052 U JP S646052U
- Authority
- JP
- Japan
- Prior art keywords
- sidewall
- gate electrode
- mos transistor
- impurity concentration
- concentration region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012535 impurity Substances 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 1
Description
第１図は本考案の実施例におけるＬＤＤ構造を
有するＭＯＳトランジスタを示す断面図、第２図
はサイドウオール絶縁膜とサイドウオールの長さ
の関係を示すグラフ、第３図は従来例におけるＬ
ＤＤ構造を有するＭＯＳトランジスタを示す断面
図である。
１０……サイドウオール、１２……サイドウオ
ールの長さ、１６……ゲート電極。
FIG. 1 is a cross-sectional view showing a MOS transistor having an LDD structure according to an embodiment of the present invention, FIG. 2 is a graph showing the relationship between the sidewall insulating film and the length of the sidewall, and FIG. 3 is a graph showing the LDD structure in the conventional example.
FIG. 2 is a cross-sectional view showing a MOS transistor having a DD structure. 10... Side wall, 12... Side wall length, 16... Gate electrode.
Claims (1)
、異方性エツチングにより前記ゲート電極の側壁
にサイドウオールを形成することにより、高不純
物濃度領域と低不純物濃度領域のドレイン領域を
有するＭＯＳトランジスタにおいて、前記サイド
ウオールの長さは前記ゲート電極の厚さ以上であ
ることを特徴とするＭＯＳトランジスタ。 In the MOS transistor having a drain region of a high impurity concentration region and a low impurity concentration region, a sidewall insulating film is deposited on the gate electrode and a sidewall is formed on the sidewall of the gate electrode by anisotropic etching. A MOS transistor characterized in that the length of the sidewall is greater than or equal to the thickness of the gate electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9938487U JPS646052U (en) | 1987-06-30 | 1987-06-30 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9938487U JPS646052U (en) | 1987-06-30 | 1987-06-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS646052U true JPS646052U (en) | 1989-01-13 |
Family
ID=31326494
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9938487U Pending JPS646052U (en) | 1987-06-30 | 1987-06-30 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS646052U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54142981A (en) * | 1978-04-27 | 1979-11-07 | Matsushita Electric Ind Co Ltd | Manufacture of insulation gate type semiconductor device |
-
1987
- 1987-06-30 JP JP9938487U patent/JPS646052U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54142981A (en) * | 1978-04-27 | 1979-11-07 | Matsushita Electric Ind Co Ltd | Manufacture of insulation gate type semiconductor device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH02140863U (en) | ||
| JPH0479424U (en) | ||
| JPH03101556U (en) | ||
| JPS62196358U (en) | ||
| JPS63167755U (en) | ||
| JPS63132457U (en) | ||
| JPS62151769U (en) | ||
| JPS63174464U (en) | ||
| JPS6459864A (en) | Mos transistor | |
| JPH0377463U (en) | ||
| JPS6343456U (en) | ||
| JPS6393661U (en) | ||
| JPS62170650U (en) | ||
| JPS6359349U (en) | ||
| JPS63118249U (en) | ||
| JPS6280351U (en) | ||
| JPS6380864U (en) | ||
| JPH0342123U (en) | ||
| JPS6018558U (en) | thin film transistor element | |
| JPS6448054U (en) | ||
| JPS63188963U (en) | ||
| JPS6247149U (en) | ||
| JPS62168662U (en) | ||
| JPH02137054U (en) | ||
| JPH0180959U (en) |