JPS6464355A - Solid-state image sensing device and its manufacture - Google Patents

Solid-state image sensing device and its manufacture

Info

Publication number
JPS6464355A
JPS6464355A JP62221279A JP22127987A JPS6464355A JP S6464355 A JPS6464355 A JP S6464355A JP 62221279 A JP62221279 A JP 62221279A JP 22127987 A JP22127987 A JP 22127987A JP S6464355 A JPS6464355 A JP S6464355A
Authority
JP
Japan
Prior art keywords
refractory metal
metal layer
oxide film
aluminum
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62221279A
Other languages
English (en)
Other versions
JPH0666452B2 (ja
Inventor
Kazunari Watabe
Hiroshi Nozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62221279A priority Critical patent/JPH0666452B2/ja
Priority to US07/239,610 priority patent/US5028972A/en
Publication of JPS6464355A publication Critical patent/JPS6464355A/ja
Priority to US07/694,768 priority patent/US5264374A/en
Publication of JPH0666452B2 publication Critical patent/JPH0666452B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP62221279A 1987-09-04 1987-09-04 固体撮像装置の製造方法 Expired - Fee Related JPH0666452B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP62221279A JPH0666452B2 (ja) 1987-09-04 1987-09-04 固体撮像装置の製造方法
US07/239,610 US5028972A (en) 1987-09-04 1988-09-01 Solid state image sensing device
US07/694,768 US5264374A (en) 1987-09-04 1991-05-02 Method of manufacturing a solid state image sensing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62221279A JPH0666452B2 (ja) 1987-09-04 1987-09-04 固体撮像装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6464355A true JPS6464355A (en) 1989-03-10
JPH0666452B2 JPH0666452B2 (ja) 1994-08-24

Family

ID=16764291

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62221279A Expired - Fee Related JPH0666452B2 (ja) 1987-09-04 1987-09-04 固体撮像装置の製造方法

Country Status (2)

Country Link
US (1) US5028972A (ja)
JP (1) JPH0666452B2 (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02232967A (ja) * 1989-03-06 1990-09-14 Nec Corp 固体撮像装置
JPH03169078A (ja) * 1989-11-28 1991-07-22 Nec Corp 固体撮像装置
EP0488131A1 (en) * 1990-11-26 1992-06-03 Nec Corporation Solid-state image pickup device
EP0487989A3 (en) * 1990-11-16 1992-09-09 Sony Corporation Solid-state imaging device
US5286669A (en) * 1989-07-06 1994-02-15 Kabushiki Kaisha Toshiba Solid-state imaging device and method of manufacturing the same
JPH0645582A (ja) * 1992-02-26 1994-02-18 Samsung Electron Co Ltd 固体撮像素子
US5424775A (en) * 1991-03-06 1995-06-13 Matsushita Electronics Corporation Solid-state image pickup device and method of manufacturing the same

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5329149A (en) * 1990-10-12 1994-07-12 Seiko Instruments Inc. Image sensor with non-light-transmissive layer having photosensing windows
EP0495503B1 (en) * 1991-01-17 1997-03-26 Sony Corporation CCD imager
JP3142327B2 (ja) * 1991-02-05 2001-03-07 株式会社東芝 固体撮像装置及びその製造方法
EP0557098B1 (en) * 1992-02-20 1998-04-29 Matsushita Electronics Corporation Solid-State Image Pick-up Device and Method of manufacturing the same
JP2925444B2 (ja) * 1993-10-05 1999-07-28 シャープ株式会社 固体撮像素子およびその製造方法
US6160282A (en) * 1998-04-21 2000-12-12 Foveon, Inc. CMOS image sensor employing silicide exclusion mask to reduce leakage and improve performance
JP3319419B2 (ja) * 1999-02-24 2002-09-03 日本電気株式会社 固体撮像装置
US6867062B2 (en) * 2003-08-15 2005-03-15 Eastman Kodak Company Method for forming light shield process for solid-state image sensor with multi-metallization layer
US10373477B1 (en) 2016-09-28 2019-08-06 Gojo Industries, Inc. Hygiene compliance modules for dispensers, dispensers and compliance monitoring systems
JP2018116228A (ja) * 2017-01-20 2018-07-26 株式会社ジャパンディスプレイ 表示装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60102769A (ja) * 1983-11-09 1985-06-06 Toshiba Corp 固体撮像装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3833919A (en) * 1972-10-12 1974-09-03 Ncr Multilevel conductor structure and method
US4621275A (en) * 1983-04-30 1986-11-04 Matsushita Electric Industrial Co., Ltd. Solid-state imaging device
JPS60152180A (ja) * 1984-01-19 1985-08-10 Fuji Photo Film Co Ltd 固体撮像デバイスを用いた撮影装置
JPS6114749A (ja) * 1984-06-29 1986-01-22 Fujitsu Ltd 半導体装置
US4912537A (en) * 1988-06-24 1990-03-27 Polaroid Corporation Image sensing array with charge isolation

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60102769A (ja) * 1983-11-09 1985-06-06 Toshiba Corp 固体撮像装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02232967A (ja) * 1989-03-06 1990-09-14 Nec Corp 固体撮像装置
US5286669A (en) * 1989-07-06 1994-02-15 Kabushiki Kaisha Toshiba Solid-state imaging device and method of manufacturing the same
JPH03169078A (ja) * 1989-11-28 1991-07-22 Nec Corp 固体撮像装置
EP0487989A3 (en) * 1990-11-16 1992-09-09 Sony Corporation Solid-state imaging device
EP0488131A1 (en) * 1990-11-26 1992-06-03 Nec Corporation Solid-state image pickup device
US5424775A (en) * 1991-03-06 1995-06-13 Matsushita Electronics Corporation Solid-state image pickup device and method of manufacturing the same
JPH0645582A (ja) * 1992-02-26 1994-02-18 Samsung Electron Co Ltd 固体撮像素子

Also Published As

Publication number Publication date
US5028972A (en) 1991-07-02
JPH0666452B2 (ja) 1994-08-24

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees