JPS6468724A - Active matrix panel - Google Patents

Active matrix panel

Info

Publication number
JPS6468724A
JPS6468724A JP62225710A JP22571087A JPS6468724A JP S6468724 A JPS6468724 A JP S6468724A JP 62225710 A JP62225710 A JP 62225710A JP 22571087 A JP22571087 A JP 22571087A JP S6468724 A JPS6468724 A JP S6468724A
Authority
JP
Japan
Prior art keywords
signal lines
tft
lines
active matrix
numbered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62225710A
Other languages
Japanese (ja)
Inventor
Yojiro Matsueda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP62225710A priority Critical patent/JPS6468724A/en
Publication of JPS6468724A publication Critical patent/JPS6468724A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/13624—Active matrix addressed cells having more than one switching element per pixel

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Liquid Crystal (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Microelectronics & Electronic Packaging (AREA)

Abstract

PURPOSE:To correct a line defect and a point defect by providing a specific number of signal lines and a specific number of picture elements TFT and giving redundancy to both of them. CONSTITUTION:The active matrix panel consists of 2M signal lines X1, X2-X2M, N scanning lines Y1-YN, MXN element electrodes, two picture element thin film transistors (TFT)6 and 7 whose drain electrodes are connected to one of the picture element electrodes in common, switches TFT9-TFT11 provided to input parts and terminals of the signal lines, and bus lines L1-L3 which turn on and off the switch TFTs. Thus, the signal lines and picture elements TFT6 and TFT7 have redundancy, so a line defect and a point defect can be corrected and the TFT switches 9-11 at the input parts of the signal lines select odd-numbered and even-numbered signal lines independently to easily detect the address of a refractive part.
JP62225710A 1987-09-09 1987-09-09 Active matrix panel Pending JPS6468724A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62225710A JPS6468724A (en) 1987-09-09 1987-09-09 Active matrix panel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62225710A JPS6468724A (en) 1987-09-09 1987-09-09 Active matrix panel

Publications (1)

Publication Number Publication Date
JPS6468724A true JPS6468724A (en) 1989-03-14

Family

ID=16833591

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62225710A Pending JPS6468724A (en) 1987-09-09 1987-09-09 Active matrix panel

Country Status (1)

Country Link
JP (1) JPS6468724A (en)

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5165075A (en) * 1990-12-10 1992-11-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optic device having pairs of complementary transistors
US5193018A (en) * 1991-10-28 1993-03-09 Industrial Technology Research Institute Active matrix liquid crystal display system using complementary thin film transistors
US5298891A (en) * 1991-04-18 1994-03-29 Thomson, S.A. Data line defect avoidance structure
US5383041A (en) * 1990-12-20 1995-01-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US5495353A (en) * 1990-11-26 1996-02-27 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving having an improved electrode and driving arrangement
US5514879A (en) * 1990-11-20 1996-05-07 Semiconductor Energy Laboratory Co., Ltd. Gate insulated field effect transistors and method of manufacturing the same
US5614732A (en) * 1990-11-20 1997-03-25 Semiconductor Energy Laboratory Co., Ltd. Gate insulated field effect transistors and method of manufacturing the same
US5933205A (en) * 1991-03-26 1999-08-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for driving the same
US6013928A (en) * 1991-08-23 2000-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having interlayer insulating film and method for forming the same
US6195139B1 (en) 1992-03-04 2001-02-27 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US6242758B1 (en) 1994-12-27 2001-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device employing resinous material, method of fabricating the same and electrooptical device
US6778231B1 (en) 1991-06-14 2004-08-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical display device
US6975296B1 (en) 1991-06-14 2005-12-13 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US7067844B2 (en) 1990-11-20 2006-06-27 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US7081938B1 (en) 1993-12-03 2006-07-25 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7098479B1 (en) 1990-12-25 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7115902B1 (en) 1990-11-20 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7154147B1 (en) 1990-11-26 2006-12-26 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US7214555B2 (en) 1995-03-18 2007-05-08 Semiconductor Energy Laboratory Co., Ltd. Method for producing display device
US7420628B1 (en) 1991-02-16 2008-09-02 Semiconductor Energy Laboratory Co., Ltd. Method of making an active-type LCD with digitally graded display
US7554616B1 (en) 1992-04-28 2009-06-30 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US7576360B2 (en) 1990-12-25 2009-08-18 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device which comprises thin film transistors and method for manufacturing the same

Cited By (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5514879A (en) * 1990-11-20 1996-05-07 Semiconductor Energy Laboratory Co., Ltd. Gate insulated field effect transistors and method of manufacturing the same
US7115902B1 (en) 1990-11-20 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US5614732A (en) * 1990-11-20 1997-03-25 Semiconductor Energy Laboratory Co., Ltd. Gate insulated field effect transistors and method of manufacturing the same
US7067844B2 (en) 1990-11-20 2006-06-27 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US5612799A (en) * 1990-11-26 1997-03-18 Semiconductor Energy Laboratory Co., Inc. Active matrix type electro-optical device
US5495353A (en) * 1990-11-26 1996-02-27 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving having an improved electrode and driving arrangement
US7423290B2 (en) 1990-11-26 2008-09-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US5905555A (en) * 1990-11-26 1999-05-18 Semiconductor Energy Laboratory Co., Ltd. Active matrix type electro-optical device having leveling film
US5946059A (en) * 1990-11-26 1999-08-31 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US7154147B1 (en) 1990-11-26 2006-12-26 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US5572047A (en) * 1990-12-10 1996-11-05 Semiconductor Energy Laboratory Co., Ltd. Electro-Optic device having pairs of complementary transistors
US5165075A (en) * 1990-12-10 1992-11-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optic device having pairs of complementary transistors
US5500538A (en) * 1990-12-20 1996-03-19 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US5383041A (en) * 1990-12-20 1995-01-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US7576360B2 (en) 1990-12-25 2009-08-18 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device which comprises thin film transistors and method for manufacturing the same
US7098479B1 (en) 1990-12-25 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7420628B1 (en) 1991-02-16 2008-09-02 Semiconductor Energy Laboratory Co., Ltd. Method of making an active-type LCD with digitally graded display
US5933205A (en) * 1991-03-26 1999-08-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for driving the same
US7489367B1 (en) 1991-03-26 2009-02-10 Semiconductor Energy Laboratory, Co., Ltd. Electro-optical device and method for driving the same
US5963278A (en) * 1991-03-26 1999-10-05 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for driving the same
US5298891A (en) * 1991-04-18 1994-03-29 Thomson, S.A. Data line defect avoidance structure
US6778231B1 (en) 1991-06-14 2004-08-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical display device
US6975296B1 (en) 1991-06-14 2005-12-13 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US6013928A (en) * 1991-08-23 2000-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having interlayer insulating film and method for forming the same
US6977392B2 (en) 1991-08-23 2005-12-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US5193018A (en) * 1991-10-28 1993-03-09 Industrial Technology Research Institute Active matrix liquid crystal display system using complementary thin film transistors
US7123320B2 (en) 1992-03-04 2006-10-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US6195139B1 (en) 1992-03-04 2001-02-27 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US8035773B2 (en) 1992-03-04 2011-10-11 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US6618105B2 (en) 1992-03-04 2003-09-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US7554616B1 (en) 1992-04-28 2009-06-30 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US7081938B1 (en) 1993-12-03 2006-07-25 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7564512B2 (en) 1993-12-03 2009-07-21 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7462519B2 (en) 1994-12-27 2008-12-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method of fabricating same, and, electrooptical device
US7468526B2 (en) 1994-12-27 2008-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method of fabricating same, and electrooptical device
US7504660B2 (en) 1994-12-27 2009-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method of fabricating same, and, electrooptical device
US6429053B1 (en) 1994-12-27 2002-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device method of fabricating same, and, electrooptical device
US6242758B1 (en) 1994-12-27 2001-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device employing resinous material, method of fabricating the same and electrooptical device
US7483091B1 (en) 1995-03-18 2009-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display devices
US7271858B2 (en) 1995-03-18 2007-09-18 Semiconductor Energy Laboratory Co., Ltd. Method for producing display-device
US7214555B2 (en) 1995-03-18 2007-05-08 Semiconductor Energy Laboratory Co., Ltd. Method for producing display device

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