JPS6468932A - Dry etching - Google Patents
Dry etchingInfo
- Publication number
- JPS6468932A JPS6468932A JP22567987A JP22567987A JPS6468932A JP S6468932 A JPS6468932 A JP S6468932A JP 22567987 A JP22567987 A JP 22567987A JP 22567987 A JP22567987 A JP 22567987A JP S6468932 A JPS6468932 A JP S6468932A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- silicon substrate
- amount
- film
- etching amount
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001312 dry etching Methods 0.000 title abstract 3
- 238000005530 etching Methods 0.000 abstract 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 7
- 229910052710 silicon Inorganic materials 0.000 abstract 7
- 239000010703 silicon Substances 0.000 abstract 7
- 239000000758 substrate Substances 0.000 abstract 7
- 229910052681 coesite Inorganic materials 0.000 abstract 5
- 229910052906 cristobalite Inorganic materials 0.000 abstract 5
- 239000000377 silicon dioxide Substances 0.000 abstract 5
- 235000012239 silicon dioxide Nutrition 0.000 abstract 5
- 229910052682 stishovite Inorganic materials 0.000 abstract 5
- 229910052905 tridymite Inorganic materials 0.000 abstract 5
- 238000012544 monitoring process Methods 0.000 abstract 4
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
Landscapes
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22567987A JPS6468932A (en) | 1987-09-09 | 1987-09-09 | Dry etching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22567987A JPS6468932A (en) | 1987-09-09 | 1987-09-09 | Dry etching |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6468932A true JPS6468932A (en) | 1989-03-15 |
Family
ID=16833085
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22567987A Pending JPS6468932A (en) | 1987-09-09 | 1987-09-09 | Dry etching |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6468932A (ja) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07122533A (ja) * | 1993-10-26 | 1995-05-12 | Nec Corp | 半導体装置の膜厚モニタ構造及びモニタ方法 |
| US5780870A (en) * | 1996-03-28 | 1998-07-14 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and a process of manufacturing the same |
| KR100438379B1 (ko) * | 2001-09-05 | 2004-07-02 | 가부시끼가이샤 히다치 세이사꾸쇼 | 반도체소자제조공정의 종점판정방법과 장치 및 그것을사용한 피처리재의 처리방법과 장치 |
| US6815228B2 (en) | 2000-06-20 | 2004-11-09 | Hitachi, Ltd. | Film thickness measuring method of member to be processed using emission spectroscopy and processing method of the member using the measuring method |
| US6890771B2 (en) | 2001-11-29 | 2005-05-10 | Hitachi, Ltd. | Plasma processing method using spectroscopic processing unit |
| US6903826B2 (en) | 2001-09-06 | 2005-06-07 | Hitachi, Ltd. | Method and apparatus for determining endpoint of semiconductor element fabricating process |
| US6972848B2 (en) | 2003-03-04 | 2005-12-06 | Hitach High-Technologies Corporation | Semiconductor fabricating apparatus with function of determining etching processing state |
| CN113651291A (zh) * | 2021-07-15 | 2021-11-16 | 复旦大学 | 一种自支撑微米厚度硅隔膜的制备方法 |
-
1987
- 1987-09-09 JP JP22567987A patent/JPS6468932A/ja active Pending
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07122533A (ja) * | 1993-10-26 | 1995-05-12 | Nec Corp | 半導体装置の膜厚モニタ構造及びモニタ方法 |
| US5780870A (en) * | 1996-03-28 | 1998-07-14 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and a process of manufacturing the same |
| US6815228B2 (en) | 2000-06-20 | 2004-11-09 | Hitachi, Ltd. | Film thickness measuring method of member to be processed using emission spectroscopy and processing method of the member using the measuring method |
| US7411684B2 (en) | 2000-06-20 | 2008-08-12 | Hitachi, Ltd. | Film thickness measuring method of member to be processed using emission spectroscopy and processing method of the member using the measuring method |
| US7230720B2 (en) | 2000-06-20 | 2007-06-12 | Hitachi, Ltd. | Film thickness measuring method of member to be processed using emission spectroscopy and processing method of the member using the measuring method |
| US6961131B2 (en) | 2000-06-20 | 2005-11-01 | Opnext Japan, Inc. | Film thickness measuring method of member to be processed using emission spectroscopy and processing method of the member using the measuring method |
| KR100438379B1 (ko) * | 2001-09-05 | 2004-07-02 | 가부시끼가이샤 히다치 세이사꾸쇼 | 반도체소자제조공정의 종점판정방법과 장치 및 그것을사용한 피처리재의 처리방법과 장치 |
| US7009715B2 (en) | 2001-09-06 | 2006-03-07 | Hitachi, Ltd. | Method and apparatus for determining endpoint of semiconductor element fabricating process and method and apparatus for processing member to be processed |
| US7126697B2 (en) | 2001-09-06 | 2006-10-24 | Hitachi, Ltd. | Method and apparatus for determining endpoint of semiconductor element fabricating process |
| US6903826B2 (en) | 2001-09-06 | 2005-06-07 | Hitachi, Ltd. | Method and apparatus for determining endpoint of semiconductor element fabricating process |
| US6890771B2 (en) | 2001-11-29 | 2005-05-10 | Hitachi, Ltd. | Plasma processing method using spectroscopic processing unit |
| US6972848B2 (en) | 2003-03-04 | 2005-12-06 | Hitach High-Technologies Corporation | Semiconductor fabricating apparatus with function of determining etching processing state |
| US7259866B2 (en) | 2003-03-04 | 2007-08-21 | Hitachi High-Technologies Corporation | Semiconductor fabricating apparatus with function of determining etching processing state |
| US8071397B2 (en) | 2003-03-04 | 2011-12-06 | Hitachi High-Technologies Corporation | Semiconductor fabricating apparatus with function of determining etching processing state |
| CN113651291A (zh) * | 2021-07-15 | 2021-11-16 | 复旦大学 | 一种自支撑微米厚度硅隔膜的制备方法 |
| CN113651291B (zh) * | 2021-07-15 | 2023-11-24 | 复旦大学 | 一种自支撑微米厚度硅隔膜的制备方法 |
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