JPS6469590A - Method for measurement and control of crystal diameter in crystal producing device and apparatus therefor - Google Patents

Method for measurement and control of crystal diameter in crystal producing device and apparatus therefor

Info

Publication number
JPS6469590A
JPS6469590A JP22560887A JP22560887A JPS6469590A JP S6469590 A JPS6469590 A JP S6469590A JP 22560887 A JP22560887 A JP 22560887A JP 22560887 A JP22560887 A JP 22560887A JP S6469590 A JPS6469590 A JP S6469590A
Authority
JP
Japan
Prior art keywords
crystal
diameter
control
measuring
luminance distribution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22560887A
Other languages
Japanese (ja)
Inventor
Ichiro Yamashita
Yasushi Shimanuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Metal Corp
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Priority to JP22560887A priority Critical patent/JPS6469590A/en
Publication of JPS6469590A publication Critical patent/JPS6469590A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To enable improvement in the accuracy of measurement and control of crystal diameter, by measuring a luminance distribution along plural measuring lines crossing near the diameter of a heat ring formed in the pulling up of a crystal, differentiating the luminance distribution with respect to a coordinate defined along the measuring lines and calculating the diameter of the heat ring. CONSTITUTION:The measurement and control of a crystal diameter are carrier out according to the following steps 1-5. (1) A aluminance distribution is measured along plural measuring lines parallel to each other and crossing near the diameter of a heat ring on the molten liquid surface from which a crystal is to be pulled up. (2) Fluctuations composed of a high-frequency component is removed from each luminance distribution detected by the step (1). (3) The corrected luminance distribution is differentiated with respect to a coordinate along each measuring line. (4) The distance between the maximum value and the minimum value of the differentiated value along each measuring line is determined for each line and the diameter of the crystal is calculated based on the largest distance among the whole measuring lines. (5) PID process is applied according to the deviation of the calculated crystal diameter from the target diameter to control the pulling up speed of the crystal or the temperature of the molten liquid.
JP22560887A 1987-09-09 1987-09-09 Method for measurement and control of crystal diameter in crystal producing device and apparatus therefor Pending JPS6469590A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22560887A JPS6469590A (en) 1987-09-09 1987-09-09 Method for measurement and control of crystal diameter in crystal producing device and apparatus therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22560887A JPS6469590A (en) 1987-09-09 1987-09-09 Method for measurement and control of crystal diameter in crystal producing device and apparatus therefor

Publications (1)

Publication Number Publication Date
JPS6469590A true JPS6469590A (en) 1989-03-15

Family

ID=16831989

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22560887A Pending JPS6469590A (en) 1987-09-09 1987-09-09 Method for measurement and control of crystal diameter in crystal producing device and apparatus therefor

Country Status (1)

Country Link
JP (1) JPS6469590A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010048790A1 (en) * 2008-10-28 2010-05-06 Hui Mengjun A method for controlling czochralski crystal growth
CN103261492A (en) * 2010-12-13 2013-08-21 Lg矽得荣株式会社 System of controlling diameter of single crystal ingot and single crystal ingot growing apparatus including the same
JP2024520870A (en) * 2021-09-24 2024-05-24 西安奕斯偉材料科技股▲ふん▼有限公司 ADC camera precision adjustment method, device, equipment, and computer storage medium

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010048790A1 (en) * 2008-10-28 2010-05-06 Hui Mengjun A method for controlling czochralski crystal growth
CN103261492A (en) * 2010-12-13 2013-08-21 Lg矽得荣株式会社 System of controlling diameter of single crystal ingot and single crystal ingot growing apparatus including the same
US9422637B2 (en) 2010-12-13 2016-08-23 Lg Siltron Inc. System of controlling diameter of single crystal ingot and single crystal ingot growing apparatus including the same
JP2024520870A (en) * 2021-09-24 2024-05-24 西安奕斯偉材料科技股▲ふん▼有限公司 ADC camera precision adjustment method, device, equipment, and computer storage medium

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