JPS6471130A - Plasma reactor - Google Patents

Plasma reactor

Info

Publication number
JPS6471130A
JPS6471130A JP62228814A JP22881487A JPS6471130A JP S6471130 A JPS6471130 A JP S6471130A JP 62228814 A JP62228814 A JP 62228814A JP 22881487 A JP22881487 A JP 22881487A JP S6471130 A JPS6471130 A JP S6471130A
Authority
JP
Japan
Prior art keywords
sample
reactive ions
plasma
reaction
susceptor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62228814A
Other languages
Japanese (ja)
Inventor
Nobuo Fujiwara
Kyusaku Nishioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62228814A priority Critical patent/JPS6471130A/en
Publication of JPS6471130A publication Critical patent/JPS6471130A/en
Pending legal-status Critical Current

Links

Landscapes

  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To increase a reaction rate, and to improve various throughput capacity by installing a high-frequency electrode heating specified reactive ions in reactive ions by ion cyclotron resonance. CONSTITUTION:Silica glass 9a is mounted so as to cover the peripheries of a pair of high-frequency electrodes 9, which are formed to a shape that a cylinder is divided into two, to the high-frequency electrodes 9, and set up along the inner circumferential surface of a plasma generating chamber 1. A DC power 10 is connected to a sample susceptor 8, and potential is applied to a sample held onto the susceptor 8. Plasma formed in a plasma generating chamber 1 flows into a reaction chamber 5 along an emissive magnetic field generated by magnetic coils 2, and generates a reaction with the sample 7. The lifetime of reactive ions in plasma is lengthened by ion cyclotron resonance at that time and the density of reactive ions is increased. Accordingly, a reaction rate in the sample 7 is made faster than a conventional plasma reactor, thus improving various throughput capacity.
JP62228814A 1987-09-10 1987-09-10 Plasma reactor Pending JPS6471130A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62228814A JPS6471130A (en) 1987-09-10 1987-09-10 Plasma reactor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62228814A JPS6471130A (en) 1987-09-10 1987-09-10 Plasma reactor

Publications (1)

Publication Number Publication Date
JPS6471130A true JPS6471130A (en) 1989-03-16

Family

ID=16882278

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62228814A Pending JPS6471130A (en) 1987-09-10 1987-09-10 Plasma reactor

Country Status (1)

Country Link
JP (1) JPS6471130A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04256316A (en) * 1991-02-08 1992-09-11 Hitachi Ltd Plasma etching method
US5279669A (en) * 1991-12-13 1994-01-18 International Business Machines Corporation Plasma reactor for processing substrates comprising means for inducing electron cyclotron resonance (ECR) and ion cyclotron resonance (ICR) conditions
EP0708688A4 (en) * 1993-07-09 1998-03-04 Energy Conversion Devices Inc Method for the improved microwave deposition of thin films

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04256316A (en) * 1991-02-08 1992-09-11 Hitachi Ltd Plasma etching method
US5279669A (en) * 1991-12-13 1994-01-18 International Business Machines Corporation Plasma reactor for processing substrates comprising means for inducing electron cyclotron resonance (ECR) and ion cyclotron resonance (ICR) conditions
EP0708688A4 (en) * 1993-07-09 1998-03-04 Energy Conversion Devices Inc Method for the improved microwave deposition of thin films

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