JPS6472043A - Growth rate monitoring apparatus and method for molecular beam epitaxy - Google Patents

Growth rate monitoring apparatus and method for molecular beam epitaxy

Info

Publication number: JPS6472043A
Authority: JP; Japan
Prior art keywords: electrons; light; thin film; substrate; collector
Prior art date: 1987-09-08
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP63204913A

Other languages

English (en)

Inventor

Enu Ekusutain Jieimusu

Uetsubu Kurisutofuaa

Rin Uen Shiyan

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Varian Medical Systems Inc

Original Assignee

Varian Associates Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1987-09-08

Filing date

1988-08-19

Publication date

1989-03-16

1988-08-19 Application filed by Varian Associates Inc filed Critical Varian Associates Inc

1989-03-16 Publication of JPS6472043A publication Critical patent/JPS6472043A/ja

Status Pending legal-status Critical Current

Links

238000000034 method Methods 0.000 title 1
238000001451 molecular beam epitaxy Methods 0.000 title 1
238000012544 monitoring process Methods 0.000 title 1
239000000758 substrate Substances 0.000 abstract 4
239000010409 thin film Substances 0.000 abstract 4
238000007740 vapor deposition Methods 0.000 abstract 2
230000015572 biosynthetic process Effects 0.000 abstract 1
238000005259 measurement Methods 0.000 abstract 1
239000002052 molecular layer Substances 0.000 abstract 1
230000003287 optical effect Effects 0.000 abstract 1
239000010453 quartz Substances 0.000 abstract 1
229910052594 sapphire Inorganic materials 0.000 abstract 1
239000010980 sapphire Substances 0.000 abstract 1
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/002—Controlling or regulating

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Crystals, And After-Treatments Of Crystals (AREA)
Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Analysing Materials By The Use Of Radiation (AREA)
Investigating Or Analysing Materials By Optical Means (AREA)

JP63204913A 1987-09-08 1988-08-19 Growth rate monitoring apparatus and method for molecular beam epitaxy Pending JPS6472043A (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US9424787A	1987-09-08	1987-09-08

Publications (1)

Publication Number	Publication Date
JPS6472043A true JPS6472043A (en)	1989-03-16

Family

ID=22244004

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP63204913A Pending JPS6472043A (en)	1987-09-08	1988-08-19	Growth rate monitoring apparatus and method for molecular beam epitaxy

Country Status (2)

Country	Link
EP (1)	EP0307096A3 (ja)
JP (1)	JPS6472043A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH09121065A (ja) *	1995-10-25	1997-05-06	Nec Corp	超格子構造磁性膜及びその製造方法
JP2011247870A (ja) *	2010-04-28	2011-12-08	Hamamatsu Photonics Kk	Ｘ線光電子分光装置およびｘ線光電子分光方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN106769889A (zh) *	2017-01-04	2017-05-31	南京大学	一种集成生长与测量的分子束外延生长系统
CN115497845B (zh) *	2022-09-06	2025-03-25	上海华虹宏力半导体制造有限公司	监控深沟槽超级结mosfet产品外延填充速率的方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4159919A (en) *	1978-01-16	1979-07-03	Bell Telephone Laboratories, Incorporated	Molecular beam epitaxy using premixing
US4434025A (en) *	1981-06-04	1984-02-28	Robillard Jean J	Controlling crystallinity and thickness of monocrystalline layer by use of an elliptically polarized beam of light
GB2130716A (en) *	1982-11-26	1984-06-06	Philips Electronic Associated	Method of determining the composition of an alloy film grown by a layer-by layer process

1988
- 1988-08-16 EP EP19880307595 patent/EP0307096A3/en not_active Withdrawn
- 1988-08-19 JP JP63204913A patent/JPS6472043A/ja active Pending

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH09121065A (ja) *	1995-10-25	1997-05-06	Nec Corp	超格子構造磁性膜及びその製造方法
JP2011247870A (ja) *	2010-04-28	2011-12-08	Hamamatsu Photonics Kk	Ｘ線光電子分光装置およびｘ線光電子分光方法

Also Published As

Publication number	Publication date
EP0307096A2 (en)	1989-03-15
EP0307096A3 (en)	1990-12-05

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