JPS647274U - - Google Patents
Info
- Publication number
- JPS647274U JPS647274U JP10062287U JP10062287U JPS647274U JP S647274 U JPS647274 U JP S647274U JP 10062287 U JP10062287 U JP 10062287U JP 10062287 U JP10062287 U JP 10062287U JP S647274 U JPS647274 U JP S647274U
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- gas
- tube
- phase epitaxial
- reaction product
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 7
- 239000007795 chemical reaction product Substances 0.000 claims 2
- 239000013078 crystal Substances 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 239000012071 phase Substances 0.000 claims 1
- 239000012808 vapor phase Substances 0.000 claims 1
- 239000002994 raw material Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
第１図は本考案の一実施例を示す断面図、第２
図は第１図のガス導入管を示す斜視図、第３図は
従来装置の一例の断面図である。
１……反応管、２……加熱炉、３，４……成長
室、５，６……原料ソース、７，８……原料ガス
導入管、９……基板保持治具、１０……基板、１
１……ガス導入筒。
Fig. 1 is a sectional view showing one embodiment of the present invention;
This figure is a perspective view showing the gas introduction pipe of FIG. 1, and FIG. 3 is a sectional view of an example of a conventional device. 1... Reaction tube, 2... Heating furnace, 3, 4... Growth chamber, 5, 6... Raw material source, 7, 8... Raw material gas introduction tube, 9... Substrate holding jig, 10... Substrate ,1
1...Gas introduction tube.
Claims (1)
を順次経由させて該基板上に異なる複数層を結晶
成長させる気相エピタキシアル成長装置において
、前記反応管内に特定の成長室からの反応生成ガ
スを受入れるガス導入筒を回転可能に設け、該ガ
ス導入管内に、前記基板を搭載して受入れた反応
生成ガスを基板に接触させる基板保持治具を設置
したことを特徴とする気相エピタキシアル成長装
置。 In a vapor phase epitaxial growth apparatus in which a substrate is sequentially passed through a plurality of growth chambers defined in a reaction tube to grow crystals of different layers on the substrate, reaction product gas from a specific growth chamber is placed in the reaction tube. A gas phase epitaxial growth method characterized in that a gas introduction tube for receiving the gas is rotatably provided, and a substrate holding jig is installed in the gas introduction tube for mounting the substrate and bringing the received reaction product gas into contact with the substrate. Device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10062287U JPS647274U (en) | 1987-06-30 | 1987-06-30 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10062287U JPS647274U (en) | 1987-06-30 | 1987-06-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS647274U true JPS647274U (en) | 1989-01-17 |
Family
ID=31328863
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10062287U Pending JPS647274U (en) | 1987-06-30 | 1987-06-30 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS647274U (en) |
-
1987
- 1987-06-30 JP JP10062287U patent/JPS647274U/ja active Pending