JPS6473076A - Inline type ion sputtering device - Google Patents
Inline type ion sputtering deviceInfo
- Publication number
- JPS6473076A JPS6473076A JP62231301A JP23130187A JPS6473076A JP S6473076 A JPS6473076 A JP S6473076A JP 62231301 A JP62231301 A JP 62231301A JP 23130187 A JP23130187 A JP 23130187A JP S6473076 A JPS6473076 A JP S6473076A
- Authority
- JP
- Japan
- Prior art keywords
- target
- substrate
- sputtering device
- inline type
- apertures
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
PURPOSE:To improve the utilization efficiency of a target and to improve the quality of the films on a substrate surface by providing plural slit apertures between a cathode part having the target of an inline type sputtering device and a substrate conveying system in the direction perpendicular to the substrate conveying direction. CONSTITUTION:An anode 17 provided with the slit apertures 18 is interposed between the cathode part provided with the target 12 and a permanent magnet 11 behind the target of the inline type sputtering device and the substrate conveying system 4 which is imposed with the substrate 3 and moves the substrate in the direction of an arrow 9. The sputtered particles of the target material flying from the target 12 arrive at the substrate 3 by passing these apertures 18. The slit width Ws is set about the same as the width Wt of the target 12, by which the same phenomenon as in flying of the sputtered particles from plural pieces of linear evaporation sources is obtd. and the vapor deposited films having a uniform film thickness distribution are formed. The larger substrate 3 then heretofore with respect to the target 12 is usable and the film is formable on the large substrate with the same target. The utilizing efficiency of the target is thus improved.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62231301A JPS6473076A (en) | 1987-09-16 | 1987-09-16 | Inline type ion sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62231301A JPS6473076A (en) | 1987-09-16 | 1987-09-16 | Inline type ion sputtering device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6473076A true JPS6473076A (en) | 1989-03-17 |
Family
ID=16921474
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62231301A Pending JPS6473076A (en) | 1987-09-16 | 1987-09-16 | Inline type ion sputtering device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6473076A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04371A (en) * | 1990-04-16 | 1992-01-06 | Tokuda Seisakusho Ltd | Thin film formation apparatus |
| WO2008115325A1 (en) * | 2007-03-22 | 2008-09-25 | Sunpower Corporation | Deposition system with electrically isolated pallet and anode assemblies |
| KR100948547B1 (en) * | 2007-12-11 | 2010-03-18 | 한국원자력연구원 | High Vacuum Magnetron Sputtering Gun |
| JP2011174148A (en) * | 2010-02-25 | 2011-09-08 | Showa Shinku:Kk | Sputtering apparatus |
-
1987
- 1987-09-16 JP JP62231301A patent/JPS6473076A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04371A (en) * | 1990-04-16 | 1992-01-06 | Tokuda Seisakusho Ltd | Thin film formation apparatus |
| WO2008115325A1 (en) * | 2007-03-22 | 2008-09-25 | Sunpower Corporation | Deposition system with electrically isolated pallet and anode assemblies |
| US8557093B2 (en) | 2007-03-22 | 2013-10-15 | Sunpower Corporation | Deposition system with electrically isolated pallet and anode assemblies |
| US9556512B2 (en) | 2007-03-22 | 2017-01-31 | Sunpower Corporation | Deposition system with electrically isolated pallet and anode assemblies |
| KR100948547B1 (en) * | 2007-12-11 | 2010-03-18 | 한국원자력연구원 | High Vacuum Magnetron Sputtering Gun |
| JP2011174148A (en) * | 2010-02-25 | 2011-09-08 | Showa Shinku:Kk | Sputtering apparatus |
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