JPS6473598A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS6473598A
JPS6473598A JP62231641A JP23164187A JPS6473598A JP S6473598 A JPS6473598 A JP S6473598A JP 62231641 A JP62231641 A JP 62231641A JP 23164187 A JP23164187 A JP 23164187A JP S6473598 A JPS6473598 A JP S6473598A
Authority
JP
Japan
Prior art keywords
dynamic type
type ram
fuse means
photomask
changing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62231641A
Other languages
Japanese (ja)
Other versions
JP2623461B2 (en
Inventor
Kazuhiko Kajitani
Hiroaki Kotani
Kazuyoshi Oshima
Yasuhiro Kasama
Shinji Udo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Hitachi Solutions Technology Ltd
Original Assignee
Hitachi ULSI Engineering Corp
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi ULSI Engineering Corp, Hitachi Ltd filed Critical Hitachi ULSI Engineering Corp
Priority to JP62231641A priority Critical patent/JP2623461B2/en
Priority to US07/228,228 priority patent/US4956811A/en
Priority to KR1019880011293A priority patent/KR0155150B1/en
Publication of JPS6473598A publication Critical patent/JPS6473598A/en
Priority to US07/575,658 priority patent/US5018101A/en
Priority to US07/703,845 priority patent/US5268868A/en
Application granted granted Critical
Publication of JP2623461B2 publication Critical patent/JP2623461B2/en
Priority to KR1019980011421A priority patent/KR0171268B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)

Abstract

PURPOSE:To attain the efficient grade development of a dynamic type RAM, etc., by disconnecting selectively the prescribed fuse means of a common semiconductor substrate and setting the action mode of the dynamic type RAM. CONSTITUTION:The action mode of the dynamic type RAM, etc., is set by disconnecting selectively prescribed fuse means F1 and F2 and its bit constitution is set by changing a part of the photomask of the common semiconductor substrate. Consequently, by disconnecting selectively the prescribed fuse means F1 and F2 the switching of the action mode can be executed without changing the photomask and by changing a part of the photomask, the switching of the bit constitution can be realized without lowering the signal transmission characteristic of a circuit. Thus, without increasing in vain the number of the fuse means F1 and F2 and the photomasks and without lowering the action characteristic of an access time, the grade development of the dynamic type RAM, etc., can be efficiently realized.
JP62231641A 1987-09-16 1987-09-16 Dynamic RAM Expired - Lifetime JP2623461B2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP62231641A JP2623461B2 (en) 1987-09-16 1987-09-16 Dynamic RAM
US07/228,228 US4956811A (en) 1987-09-16 1988-07-04 Semiconductor memory
KR1019880011293A KR0155150B1 (en) 1987-09-16 1988-09-01 Semiconductor memory apparatus
US07/575,658 US5018101A (en) 1987-09-16 1990-08-31 Semiconductor memory
US07/703,845 US5268868A (en) 1987-09-16 1991-05-21 Output buffer circuits for reducing ground bounce noise
KR1019980011421A KR0171268B1 (en) 1987-09-16 1998-04-01 Semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62231641A JP2623461B2 (en) 1987-09-16 1987-09-16 Dynamic RAM

Publications (2)

Publication Number Publication Date
JPS6473598A true JPS6473598A (en) 1989-03-17
JP2623461B2 JP2623461B2 (en) 1997-06-25

Family

ID=16926681

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62231641A Expired - Lifetime JP2623461B2 (en) 1987-09-16 1987-09-16 Dynamic RAM

Country Status (1)

Country Link
JP (1) JP2623461B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02139791A (en) * 1988-04-23 1990-05-29 Samsung Electron Co Ltd Memory operation mode selector circuit

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5919367A (en) * 1982-07-26 1984-01-31 Toshiba Corp Gate array with memory
JPS6032340A (en) * 1983-08-02 1985-02-19 Nec Corp Semiconductor integrated circuit device
JPS63250149A (en) * 1987-04-07 1988-10-18 Mitsubishi Electric Corp Semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5919367A (en) * 1982-07-26 1984-01-31 Toshiba Corp Gate array with memory
JPS6032340A (en) * 1983-08-02 1985-02-19 Nec Corp Semiconductor integrated circuit device
JPS63250149A (en) * 1987-04-07 1988-10-18 Mitsubishi Electric Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02139791A (en) * 1988-04-23 1990-05-29 Samsung Electron Co Ltd Memory operation mode selector circuit

Also Published As

Publication number Publication date
JP2623461B2 (en) 1997-06-25

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