JPS6473680A - Photovoltaic device - Google Patents
Photovoltaic deviceInfo
- Publication number
- JPS6473680A JPS6473680A JP62229984A JP22998487A JPS6473680A JP S6473680 A JPS6473680 A JP S6473680A JP 62229984 A JP62229984 A JP 62229984A JP 22998487 A JP22998487 A JP 22998487A JP S6473680 A JPS6473680 A JP S6473680A
- Authority
- JP
- Japan
- Prior art keywords
- type
- layer part
- semiconductor film
- type layer
- impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 abstract 6
- 239000012535 impurity Substances 0.000 abstract 4
- 239000004065 semiconductor Substances 0.000 abstract 4
- 239000002245 particle Substances 0.000 abstract 3
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 239000000969 carrier Substances 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 229910001220 stainless steel Inorganic materials 0.000 abstract 1
- 239000010935 stainless steel Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To prevent carriers from being recoupled by a method wherein a crystal grain boundary where crystal particles are adjacent to one another is doped with an impurity used to determine a conductivity type. CONSTITUTION:A metal substrate 1 composed of stainless steel or the like and a semiconductor film 2 composed of an aggregate of many crystal particles are provided; this film is composed of a p-type layer part 2p, an i-type layer part 2i and an n-type layer part 2n in order to form a pin junction which is nearly parallel to a film plane as viewed from the light incidence side. A photodetecting face electrode 3 which is arranged on the surface of the p-type layer part 2p on the light incidence side in a shape to let a beam enter the semiconductor film 2 is constituted to be, e.g., a metal lattice shape and covers the whole surface of the semiconductor film 2 evenly. A light-transmitting protective film 4 which covers the surface of the semiconductor film 2 including the photodetecting face electrode 3 in order to prevent an incident beam from being reflected and to protect the surface is composed of silicon oxide, A crystal grain boundary where crystal particles are adjacent to one another is doped with an impurity used to determine a conductivity type at an impurity layer part displaying a p-type or an n-type conductivity type. The crystal grain boundary at the p-type layer part 2p arranged on the light incidence side is doped with the impurity to determine the p-type, e.g., boron, aluminum or the like.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62229984A JPS6473680A (en) | 1987-09-14 | 1987-09-14 | Photovoltaic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62229984A JPS6473680A (en) | 1987-09-14 | 1987-09-14 | Photovoltaic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6473680A true JPS6473680A (en) | 1989-03-17 |
Family
ID=16900776
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62229984A Pending JPS6473680A (en) | 1987-09-14 | 1987-09-14 | Photovoltaic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6473680A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57160174A (en) * | 1981-03-30 | 1982-10-02 | Hitachi Ltd | Thin film solar battery |
| JPS58182278A (en) * | 1982-04-19 | 1983-10-25 | Nec Corp | solar cells |
| JPS60220978A (en) * | 1985-04-03 | 1985-11-05 | Hitachi Ltd | Photovoltaic thin film semiconductor device |
-
1987
- 1987-09-14 JP JP62229984A patent/JPS6473680A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57160174A (en) * | 1981-03-30 | 1982-10-02 | Hitachi Ltd | Thin film solar battery |
| JPS58182278A (en) * | 1982-04-19 | 1983-10-25 | Nec Corp | solar cells |
| JPS60220978A (en) * | 1985-04-03 | 1985-11-05 | Hitachi Ltd | Photovoltaic thin film semiconductor device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5024953A (en) | Method for producing opto-electric transducing element | |
| JPS55108780A (en) | Thin film solar cell | |
| US3963926A (en) | Detector cold shield | |
| JPS5513938A (en) | Photoelectronic conversion semiconductor device and its manufacturing method | |
| US4029518A (en) | Solar cell | |
| US20090120488A1 (en) | Luminescent solar concentrator devices | |
| BR9205169A (en) | PROCESS FOR MANUFACTURING A SOLAR CELL, PROCESS FOR STRUCTURING MATERIAL AND SOLAR CELL | |
| JPS6476778A (en) | Amorphous photoelectric conversion device | |
| JPS6343366A (en) | Infrared detector | |
| FR2443746A1 (en) | PHOTOVOLTAIC DEVICE, ESPECIALLY SOLAR CELL | |
| JPS561318A (en) | Photoelectric conversion device | |
| JO1929B1 (en) | Photoelectric cell system and optical installation | |
| JPS5473587A (en) | Thin film solar battery device | |
| JPS52124888A (en) | Production of solar battery | |
| JPS57107082A (en) | Detector for infrared ray | |
| JPS5356988A (en) | Photovoltaic element | |
| JPS5522871A (en) | Semiconductor light detector | |
| JPS5587007A (en) | Semiconductor photo position detector | |
| JPS57157578A (en) | Active crystalline silicon thin film photovoltaic element | |
| JPS55102280A (en) | Infrared charge transfer device | |
| JPS6412583A (en) | Photodetector | |
| JPS629747Y2 (en) | ||
| Brandhorst Jr et al. | Thin solar cell and lightweight array | |
| JPS55134970A (en) | Photofiring thyristor | |
| Hwang et al. | Effect of wafer stress on surface photovoltage diffusion length measurements |