JPS6473743A - Method of filling through hole and semiconductor device using same - Google Patents

Method of filling through hole and semiconductor device using same

Info

Publication number
JPS6473743A
JPS6473743A JP22952687A JP22952687A JPS6473743A JP S6473743 A JPS6473743 A JP S6473743A JP 22952687 A JP22952687 A JP 22952687A JP 22952687 A JP22952687 A JP 22952687A JP S6473743 A JPS6473743 A JP S6473743A
Authority
JP
Japan
Prior art keywords
hole
substrate
layer
conducting layer
conductive substance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22952687A
Other languages
Japanese (ja)
Inventor
Masaaki Maehara
Eisuke Nishitani
Susumu Tsujiku
Mitsuo Nakatani
Koichiro Mizukami
Mitsuaki Horiuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP22952687A priority Critical patent/JPS6473743A/en
Publication of JPS6473743A publication Critical patent/JPS6473743A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To give barrier properties for blocking the counter diffusion of a substance constituting a metallic wiring with a base part by a method wherein a conductive substance is selectively deposited in the interior of a penetrated hole formed in an insulating film and this conductive substance is nitrided or silicified. CONSTITUTION:A penetrated hole is formed in an insulating film 7 formed on a single crystal Si substrate 1 and thereafter, a natural oxide film 11 remains. Then, this film 11 is removed to expose the clean surface of the substrate 1 on the bottom part of the hole 8. Then, a first conducting layer 10a is selectively formed on the surface, which is exposed on the bottom part of the hole 8, of the substrate 1. Then, by silicifying or nitriding the layer 10a, a silicified or nitrided first conducting layer 10b is formed. After that, a second conducting layer 10c is formed on the layer 10b. Thereby, an augmentation in the contact resistance between the deposited conductive substance and the substrate 1, a reduction in a selectivity at the time of deposition and so on can be prevented.
JP22952687A 1987-09-16 1987-09-16 Method of filling through hole and semiconductor device using same Pending JPS6473743A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22952687A JPS6473743A (en) 1987-09-16 1987-09-16 Method of filling through hole and semiconductor device using same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22952687A JPS6473743A (en) 1987-09-16 1987-09-16 Method of filling through hole and semiconductor device using same

Publications (1)

Publication Number Publication Date
JPS6473743A true JPS6473743A (en) 1989-03-20

Family

ID=16893550

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22952687A Pending JPS6473743A (en) 1987-09-16 1987-09-16 Method of filling through hole and semiconductor device using same

Country Status (1)

Country Link
JP (1) JPS6473743A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05160273A (en) * 1991-12-05 1993-06-25 Sharp Corp Contact plug of semiconductor device and formation thereof, and multilayer wiring of semiconductor device and formation thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05160273A (en) * 1991-12-05 1993-06-25 Sharp Corp Contact plug of semiconductor device and formation thereof, and multilayer wiring of semiconductor device and formation thereof

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