JPS6473765A - Solid state image sensing device - Google Patents

Solid state image sensing device

Info

Publication number
JPS6473765A
JPS6473765A JP62231870A JP23187087A JPS6473765A JP S6473765 A JPS6473765 A JP S6473765A JP 62231870 A JP62231870 A JP 62231870A JP 23187087 A JP23187087 A JP 23187087A JP S6473765 A JPS6473765 A JP S6473765A
Authority
JP
Japan
Prior art keywords
elements
wiring
signal reading
solid state
sensing device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62231870A
Other languages
Japanese (ja)
Inventor
Yoshihiko Machida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP62231870A priority Critical patent/JPS6473765A/en
Publication of JPS6473765A publication Critical patent/JPS6473765A/en
Pending legal-status Critical Current

Links

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE:To improve S/N and resolution of solid state image sensing device by arranging each optoelectric conversion element so that two or more optoelectric conversion elements connected to the same signal reading wire may be placed side by side in one-dimensional solid state image sensing device. CONSTITUTION:Optoelectric conversion elements 111 and 121 consist of the lower electrode by a transparent conductive layer 103, and the upper electrode by a photoconductive layer 102 and a metal wiring layer 107, and external parallel capacitor parts 112 and 122 consist of the upper electrode by a lower electrode 108, an insulation film between layers 104, and a wiring 107, while analog switches 113 and 123 made of a thin-film transistor select the elements 111 and 121. Elements 111 and 121 connected to the same signal reading wiring are arranged so that a pair is places side by side each and only one wiring line is required for the elements 112 and 121 for connecting to a signal reading wiring 114. Then, there is only one cross-under part 142 between signal reading wires for four photoconductive conversion elements. Thus, coupling capacity between wire is reduced and S/N and resolution can be improved.
JP62231870A 1987-09-16 1987-09-16 Solid state image sensing device Pending JPS6473765A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62231870A JPS6473765A (en) 1987-09-16 1987-09-16 Solid state image sensing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62231870A JPS6473765A (en) 1987-09-16 1987-09-16 Solid state image sensing device

Publications (1)

Publication Number Publication Date
JPS6473765A true JPS6473765A (en) 1989-03-20

Family

ID=16930310

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62231870A Pending JPS6473765A (en) 1987-09-16 1987-09-16 Solid state image sensing device

Country Status (1)

Country Link
JP (1) JPS6473765A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100388474B1 (en) * 2000-12-30 2003-06-25 주식회사 하이닉스반도체 Image sensor capable of increasing capacitance of photodiode and method for fabricating the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100388474B1 (en) * 2000-12-30 2003-06-25 주식회사 하이닉스반도체 Image sensor capable of increasing capacitance of photodiode and method for fabricating the same

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