JPS64740A - Ii-vi compound crystal article and forming method thereof - Google Patents
Ii-vi compound crystal article and forming method thereofInfo
- Publication number
- JPS64740A JPS64740A JP7279288A JP7279288A JPS64740A JP S64740 A JPS64740 A JP S64740A JP 7279288 A JP7279288 A JP 7279288A JP 7279288 A JP7279288 A JP 7279288A JP S64740 A JPS64740 A JP S64740A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- nucleation
- thin
- film
- nucleus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title abstract 11
- 150000001875 compounds Chemical class 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 3
- 230000006911 nucleation Effects 0.000 abstract 8
- 238000010899 nucleation Methods 0.000 abstract 8
- 239000010409 thin film Substances 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 2
- 238000007493 shaping process Methods 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
- 238000001459 lithography Methods 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 238000005498 polishing Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE: To enable a method, in which a II-VI compound crystal article is formed efficiently through a simple process without using a special device, by shaping a single nucleus to a nucleation surface at the desired position of a base body having a non- nucleation surface having small nucleation density and growing a II-VI compound single crystal from the single nucleus.
CONSTITUTION: A thin-film 5 enabling selective nucleation and having small nucleation density is formed onto a substrate 4 consisting of a material-resisting a high temperature, and a nucleation surface 6 composed of materials of a different kind is shaped sufficiently minutely by patterning through lithography, etc., thus acquiring a base body for forming a crystal. The size of the nucleation surface 6 differs according to the kinds of materials, but it may extend over several microns or less. A nucleus is grown, keeping single crystal structure, and changed into an insular single crystal grain 7. The insular single crystal grain 7 is further grown centering around the nucleation surface 6, maintaining single crystal structure, and can cover one part or the whole of the thin-film 5 (a single crystal 7A). The surface of the single crystal 7A is flattened through etching or polishing as required, and a single crystal layer 8 capable of shaping a desired element is formed onto the thin-film 5.
COPYRIGHT: (C)1989,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7279288A JP2659746B2 (en) | 1987-03-26 | 1988-03-26 | Group II-VI compound crystal article and method of forming the same |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7199087 | 1987-03-26 | ||
| JP62-71990 | 1987-03-26 | ||
| JP7279288A JP2659746B2 (en) | 1987-03-26 | 1988-03-26 | Group II-VI compound crystal article and method of forming the same |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPS64740A true JPS64740A (en) | 1989-01-05 |
| JPH01740A JPH01740A (en) | 1989-01-05 |
| JP2659746B2 JP2659746B2 (en) | 1997-09-30 |
Family
ID=26413116
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7279288A Expired - Lifetime JP2659746B2 (en) | 1987-03-26 | 1988-03-26 | Group II-VI compound crystal article and method of forming the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2659746B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013222762A (en) * | 2012-04-13 | 2013-10-28 | Sharp Corp | Compound semiconductor layer and manufacturing method of the same, and compound thin film solar cell and manufacturing method of the same |
-
1988
- 1988-03-26 JP JP7279288A patent/JP2659746B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013222762A (en) * | 2012-04-13 | 2013-10-28 | Sharp Corp | Compound semiconductor layer and manufacturing method of the same, and compound thin film solar cell and manufacturing method of the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2659746B2 (en) | 1997-09-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0285358A3 (en) | Process for producing compound semiconductor and semiconductor device using compound semiconductor obtained by same | |
| ATE166747T1 (en) | METHOD FOR PRODUCING A SEMICONDUCTOR SUBSTRATE | |
| EP1119053A3 (en) | Semiconductor, semiconductor device, and method for fabricating the same | |
| EP0301463A3 (en) | Thin film silicon semiconductor device and process for producing it | |
| JPS6415912A (en) | Semiconductor device | |
| JPS6432622A (en) | Formation of soi film | |
| JPS64740A (en) | Ii-vi compound crystal article and forming method thereof | |
| US5423286A (en) | Method for forming crystal and crystal article | |
| JPS5272399A (en) | Method and apparatus for growth of single crystals of al2o3 from gas p hase | |
| EP0276960A3 (en) | Process for producing crystal article | |
| KR950020969A (en) | Method of manufacturing thin film of heterojunction structure using V-groove | |
| EP0284437A3 (en) | Iii - v group compound crystal article and process for producing the same | |
| JPS64723A (en) | Iii-v compound crystal article and forming method thereof | |
| JPS53108389A (en) | Manufacture for semiconductor device | |
| EP0284434A3 (en) | Method of forming crystals | |
| EP0284435A3 (en) | Process for selective formation of ii-vi group compound film | |
| JPS6425515A (en) | Manufacture of semiconductor device | |
| JPS6451652A (en) | Electronic part | |
| JPS57159017A (en) | Manufacture of semiconductor single crystal film | |
| HAWRYLO | LPE(Liquid Phase Epitaxy) semiconductor material transfer method(Patent) | |
| JPS5678495A (en) | Preparation of base | |
| Wong et al. | 2.2 Graphoepitaxy of Si, Ge and Model Materials | |
| JPS6481308A (en) | Formation of semiconductor thin film | |
| JPS5513930A (en) | Manufacturing method for semiconductor device | |
| JPS57194520A (en) | Manufacture of semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080606 Year of fee payment: 11 |