JPS6474460A - Testing method for through-hole - Google Patents

Testing method for through-hole

Info

Publication number
JPS6474460A
JPS6474460A JP62233028A JP23302887A JPS6474460A JP S6474460 A JPS6474460 A JP S6474460A JP 62233028 A JP62233028 A JP 62233028A JP 23302887 A JP23302887 A JP 23302887A JP S6474460 A JPS6474460 A JP S6474460A
Authority
JP
Japan
Prior art keywords
hole
conductor layer
measuring instrument
voltage measuring
current source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62233028A
Other languages
Japanese (ja)
Inventor
Ichiro Munakata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP62233028A priority Critical patent/JPS6474460A/en
Publication of JPS6474460A publication Critical patent/JPS6474460A/en
Pending legal-status Critical Current

Links

Landscapes

  • Testing Of Short-Circuits, Discontinuities, Leakage, Or Incorrect Line Connections (AREA)
  • Measurement Of Resistance Or Impedance (AREA)

Abstract

PURPOSE:To measure the low resistance of a through-hole with high accuracy and high efficiency by connecting a current source and a voltage measuring instrument to the through-hole symmetrically and measuring a voltage applied to the through-hole by said voltage measuring instrument. CONSTITUTION:A conductor layer 3 to which one end of the through-hole 2 is connected is formed on the reverse surface of an insulating substrate 1 and the constant current source 4 is connected between one end of the conductor layer 3 and through-hole 2. The voltage measuring instrument 5, on the other hand, is connected between the conductor layer 3 and through-hole 2. The connection position between the conductor layer 3 and voltage measuring instrument 5 is almost symmetrical with the connection position between the conductor layer 3 and constant current source 4. Consequently, the insulating substrate 1, constant current source 4, and voltage measuring instrument 5 are connected more easily than by a conventional four-probe method, and the low resistance of the fine through-hole is measured with high accuracy.
JP62233028A 1987-09-17 1987-09-17 Testing method for through-hole Pending JPS6474460A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62233028A JPS6474460A (en) 1987-09-17 1987-09-17 Testing method for through-hole

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62233028A JPS6474460A (en) 1987-09-17 1987-09-17 Testing method for through-hole

Publications (1)

Publication Number Publication Date
JPS6474460A true JPS6474460A (en) 1989-03-20

Family

ID=16948673

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62233028A Pending JPS6474460A (en) 1987-09-17 1987-09-17 Testing method for through-hole

Country Status (1)

Country Link
JP (1) JPS6474460A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102735939A (en) * 2012-07-11 2012-10-17 电子科技大学 Method for measuring ohmic contact resistivity between black silicon material and metal electrodes

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102735939A (en) * 2012-07-11 2012-10-17 电子科技大学 Method for measuring ohmic contact resistivity between black silicon material and metal electrodes

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