JPS6475669A - Sputtering device - Google Patents

Sputtering device

Info

Publication number
JPS6475669A
JPS6475669A JP23154587A JP23154587A JPS6475669A JP S6475669 A JPS6475669 A JP S6475669A JP 23154587 A JP23154587 A JP 23154587A JP 23154587 A JP23154587 A JP 23154587A JP S6475669 A JPS6475669 A JP S6475669A
Authority
JP
Japan
Prior art keywords
target
atoms
gas
gaseous
sputtering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP23154587A
Other languages
Japanese (ja)
Other versions
JPH0639690B2 (en
Inventor
Kenichi Kubo
Yuichi Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP62231545A priority Critical patent/JPH0639690B2/en
Publication of JPS6475669A publication Critical patent/JPS6475669A/en
Publication of JPH0639690B2 publication Critical patent/JPH0639690B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To execute sputtering with high accuracy and high stability by providing a gas flow passage between the closet electrodes around a target in a treatment chamber and admitting gas therein during sputtering. CONSTITUTION:A gaseous Ar atmosphere of a prescribed pressure is maintained in the treatment chamber 1. A sputtering gun part 2 is magnetized and a DC voltage is impressed from a power supply 12 to the 1st electrode 8 and the 2nd electrode 10 to generate a plasma discharge and to generator Ar plasma 22 atop the target 9. The gaseous Ar is simultaneously admitted from a gas introducing source 14 into a gas inflow port 11 through an introducing pipe 16. The Ar ions confined near the front face of the target 9 sputter the target (WSi) by the magnetic lines 23 of force formed by an outside magnetic pole 6 and an inside magnetic pole 7 at this time. The W atoms., therefore, deposit on a semiconductor wafer 17 and form a film thereon, but the Si atoms. tend to stick and deposit near the periphery of the target 9. Since the gaseous Ar is admitted to the Si atoms. from the gas inflow port 11, the Si atoms. are sprung away and are prevented from sticking and depositing thereto.
JP62231545A 1987-09-16 1987-09-16 Sputtering equipment Expired - Lifetime JPH0639690B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62231545A JPH0639690B2 (en) 1987-09-16 1987-09-16 Sputtering equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62231545A JPH0639690B2 (en) 1987-09-16 1987-09-16 Sputtering equipment

Publications (2)

Publication Number Publication Date
JPS6475669A true JPS6475669A (en) 1989-03-22
JPH0639690B2 JPH0639690B2 (en) 1994-05-25

Family

ID=16925176

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62231545A Expired - Lifetime JPH0639690B2 (en) 1987-09-16 1987-09-16 Sputtering equipment

Country Status (1)

Country Link
JP (1) JPH0639690B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6337001B1 (en) * 1997-07-15 2002-01-08 Unaxis Balzers Aktiengesellschaft Process for sputter coating, a sputter coating source, and sputter coating apparatus with at least one such source

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010019852A1 (en) 2010-05-07 2011-11-10 Knecht Maschinenbau Gmbh Apparatus for grinding hand knives

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60155673A (en) * 1983-09-02 1985-08-15 ライボルト・アクチェンゲゼルシャフト Reactive sputtering method for metal or semiconductor compound and device therefor
JPS6326358A (en) * 1986-07-17 1988-02-03 Tokuda Seisakusho Ltd Sputtering apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60155673A (en) * 1983-09-02 1985-08-15 ライボルト・アクチェンゲゼルシャフト Reactive sputtering method for metal or semiconductor compound and device therefor
JPS6326358A (en) * 1986-07-17 1988-02-03 Tokuda Seisakusho Ltd Sputtering apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6337001B1 (en) * 1997-07-15 2002-01-08 Unaxis Balzers Aktiengesellschaft Process for sputter coating, a sputter coating source, and sputter coating apparatus with at least one such source

Also Published As

Publication number Publication date
JPH0639690B2 (en) 1994-05-25

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