JPS6475680A - Plasma cvd device - Google Patents

Plasma cvd device

Info

Publication number: JPS6475680A
Authority: JP; Japan
Prior art keywords: substrate; electric field; mask; electrode; cvd device
Prior art date: 1987-09-17
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP23112087A

Other languages

English (en)

Other versions

JPH0653928B2 (ja

Inventor

Takayuki Ishizaki

Kenji Nakatani

Hiroshi Okaniwa

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Teijin Ltd

Original Assignee

Teijin Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1987-09-17

Filing date

1987-09-17

Publication date

1989-03-22

1987-09-17 Application filed by Teijin Ltd filed Critical Teijin Ltd

1987-09-17 Priority to JP23112087A priority Critical patent/JPH0653928B2/ja

1989-03-22 Publication of JPS6475680A publication Critical patent/JPS6475680A/ja

1994-07-20 Publication of JPH0653928B2 publication Critical patent/JPH0653928B2/ja

2009-07-20 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Links

239000000758 substrate Substances 0.000 abstract 10
230000005684 electric field Effects 0.000 abstract 5
230000001105 regulatory effect Effects 0.000 abstract 2
239000010409 thin film Substances 0.000 abstract 2
238000005268 plasma chemical vapour deposition Methods 0.000 abstract 1

Landscapes

Chemical Vapour Deposition (AREA)

JP23112087A 1987-09-17 1987-09-17 プラズマｃｖｄ装置 Expired - Fee Related JPH0653928B2 (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP23112087A JPH0653928B2 (ja)	1987-09-17	1987-09-17	プラズマｃｖｄ装置

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP23112087A JPH0653928B2 (ja)	1987-09-17	1987-09-17	プラズマｃｖｄ装置

Publications (2)

Publication Number	Publication Date
JPS6475680A true JPS6475680A (en)	1989-03-22
JPH0653928B2 JPH0653928B2 (ja)	1994-07-20

Family

ID=16918599

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP23112087A Expired - Fee Related JPH0653928B2 (ja)	1987-09-17	1987-09-17	プラズマｃｖｄ装置

Country Status (1)

Country	Link
JP (1)	JPH0653928B2 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
WO2006121068A1 (ja) *	2005-05-10	2006-11-16	Ulvac, Inc.	巻取式プラズマｃｖｄ装置
JP2007308758A (ja) *	2006-05-18	2007-11-29	Denso Corp	成膜装置及び成膜方法
JP2008057020A (ja) *	2006-09-01	2008-03-13	Ulvac Japan Ltd	巻取式プラズマｃｖｄ装置
JP2010121156A (ja) *	2008-11-18	2010-06-03	Fuji Electric Holdings Co Ltd	容量結合型プラズマｃｖｄ装置

1987
- 1987-09-17 JP JP23112087A patent/JPH0653928B2/ja not_active Expired - Fee Related

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
WO2006121068A1 (ja) *	2005-05-10	2006-11-16	Ulvac, Inc.	巻取式プラズマｃｖｄ装置
US7896968B2 (en)	2005-05-10	2011-03-01	Ulvac, Inc.	Winding type plasma CVD apparatus
JP5234911B2 (ja) *	2005-05-10	2013-07-10	株式会社アルバック	巻取式プラズマｃｖｄ装置
JP2007308758A (ja) *	2006-05-18	2007-11-29	Denso Corp	成膜装置及び成膜方法
JP2008057020A (ja) *	2006-09-01	2008-03-13	Ulvac Japan Ltd	巻取式プラズマｃｖｄ装置
JP2010121156A (ja) *	2008-11-18	2010-06-03	Fuji Electric Holdings Co Ltd	容量結合型プラズマｃｖｄ装置

Also Published As

Publication number	Publication date
JPH0653928B2 (ja)	1994-07-20

Similar Documents

Publication	Publication Date	Title
US4887770B1 (ja)	1993-05-25
WO1987007651A1 (en)	1987-12-17	Semiconductor manufacturing apparatus
EP0045858A3 (en)	1983-01-12	Plasma etching electrode
JPS6475680A (en)	1989-03-22	Plasma cvd device
AU558389B2 (en)	1987-01-29	Regulating width of vapor flow in cont vacuum deposition
JPS5642366A (en)	1981-04-20	Manufacture of semiconductor device
JPS5236470A (en)	1977-03-19	Semiconductor unit
JPS5374386A (en)	1978-07-01	Semiconductor device
JPS5786134A (en)	1982-05-29	Spin coating device for magnetic paint of magnetic disk
JPS56135934A (en)	1981-10-23	Dry etching device
JPS55158652A (en)	1980-12-10	Fitting structure for element
JPS6449225A (en)	1989-02-23	Manufacture of semiconductor device
JPS6482566A (en)	1989-03-28	Field-effect semiconductor device
JPS5394191A (en)	1978-08-17	Semiconductor device
JPS6420631A (en)	1989-01-24	Semiconductor element
JPS57204147A (en)	1982-12-14	Manufacture of semiconductor device
JPS6431335A (en)	1989-02-01	Electron beam generator
JPS55151370A (en)	1980-11-25	Field effect transistor and fabricating method of the same
JPS57121233A (en)	1982-07-28	Plasma process device
JPS52152881A (en)	1977-12-19	Controller of film thickness in equipment for forming coated film
JPS57114225A (en)	1982-07-16	Manufacturing device of semiconductor
JPS56110270A (en)	1981-09-01	Semiconductor radiant ray detector
JPS6424341A (en)	1989-01-26	Electric field ionization type gas ion source
CA1101658A (en)	1981-05-26	Apparatus for use in continuous process for electrostatic coating with pulverized material
JPS577935A (en)	1982-01-16	Method for dry etching

Legal Events

Date	Code	Title	Description
2005-01-07	S111	Request for change of ownership or part of ownership	Free format text: JAPANESE INTERMEDIATE CODE: R313113
2005-01-17	R350	Written notification of registration of transfer	Free format text: JAPANESE INTERMEDIATE CODE: R350
2005-07-20	LAPS	Cancellation because of no payment of annual fees