JPS647583A - Light amplifier - Google Patents

Light amplifier

Info

Publication number
JPS647583A
JPS647583A JP62161178A JP16117887A JPS647583A JP S647583 A JPS647583 A JP S647583A JP 62161178 A JP62161178 A JP 62161178A JP 16117887 A JP16117887 A JP 16117887A JP S647583 A JPS647583 A JP S647583A
Authority
JP
Japan
Prior art keywords
active layer
quantum well
well structure
type
doped quantum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62161178A
Other languages
Japanese (ja)
Inventor
Masahiko Fujiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62161178A priority Critical patent/JPS647583A/en
Publication of JPS647583A publication Critical patent/JPS647583A/en
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)
  • Optical Communication System (AREA)

Abstract

PURPOSE:To make the intensity of saturation power large and obtain excellent noise characteristics by causing an active layer to contain an n-type-doped quantum well structure. CONSTITUTION:An active layer 4 contains an n-type-doped quantum well structure. Tip spherical fibers 21a and 21b are used to connect the active layer 4 to incident lights and also take out light signals and forward bias is impressed between electrodes 11 and 12, so that the gain in the active layer 4 rises to obtain amplification function. In such a case, the resultant n-type-doped quantum well structure in the active layer makes the intensity of saturation power high and enables this device to obtain an LD light amplifier having excellent noise characteristics. Furthermore, the quantum well structure makes the efficiency of a carrier density for an inputted current high and makes it possible to operate the amplifier with a low-voltage current.
JP62161178A 1987-06-30 1987-06-30 Light amplifier Pending JPS647583A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62161178A JPS647583A (en) 1987-06-30 1987-06-30 Light amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62161178A JPS647583A (en) 1987-06-30 1987-06-30 Light amplifier

Publications (1)

Publication Number Publication Date
JPS647583A true JPS647583A (en) 1989-01-11

Family

ID=15730065

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62161178A Pending JPS647583A (en) 1987-06-30 1987-06-30 Light amplifier

Country Status (1)

Country Link
JP (1) JPS647583A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6374623B1 (en) 1997-11-19 2002-04-23 Bokalan B.V./Richard Kusters Stable providing with a climate control system, and also a method for controlling the climate in such a stable
KR20160145714A (en) 2014-05-30 2016-12-20 가부시키가이샤 요시노 고교쇼 Trigger-type liquid sprayer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6374623B1 (en) 1997-11-19 2002-04-23 Bokalan B.V./Richard Kusters Stable providing with a climate control system, and also a method for controlling the climate in such a stable
KR20160145714A (en) 2014-05-30 2016-12-20 가부시키가이샤 요시노 고교쇼 Trigger-type liquid sprayer

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