JPS64766A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS64766A
JPS64766A JP63069169A JP6916988A JPS64766A JP S64766 A JPS64766 A JP S64766A JP 63069169 A JP63069169 A JP 63069169A JP 6916988 A JP6916988 A JP 6916988A JP S64766 A JPS64766 A JP S64766A
Authority
JP
Japan
Prior art keywords
hydrogen
fluorine
gas
concentration
polycrystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63069169A
Other languages
English (en)
Other versions
JPH01766A (ja
Inventor
Shigeru Shirai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP63069169A priority Critical patent/JPS64766A/ja
Publication of JPH01766A publication Critical patent/JPH01766A/ja
Publication of JPS64766A publication Critical patent/JPS64766A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Thin Film Transistor (AREA)
JP63069169A 1987-03-23 1988-03-23 Semiconductor device Pending JPS64766A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63069169A JPS64766A (en) 1987-03-23 1988-03-23 Semiconductor device

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP6830587 1987-03-23
JP62-68305 1987-03-23
JP62-69776 1987-03-24
JP63069169A JPS64766A (en) 1987-03-23 1988-03-23 Semiconductor device

Publications (2)

Publication Number Publication Date
JPH01766A JPH01766A (ja) 1989-01-05
JPS64766A true JPS64766A (en) 1989-01-05

Family

ID=26409522

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63069169A Pending JPS64766A (en) 1987-03-23 1988-03-23 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS64766A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4992839A (en) * 1987-03-23 1991-02-12 Canon Kabushiki Kaisha Field effect thin film transistor having a semiconductor layer formed from a polycrystal silicon film containing hydrogen atom and halogen atom and process for the preparation of the same
US7946592B2 (en) 2004-11-02 2011-05-24 Komatsu Corporation Bearing seal
JP2012019146A (ja) * 2010-07-09 2012-01-26 Sony Corp 撮像装置、表示撮像装置および電子機器

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4992839A (en) * 1987-03-23 1991-02-12 Canon Kabushiki Kaisha Field effect thin film transistor having a semiconductor layer formed from a polycrystal silicon film containing hydrogen atom and halogen atom and process for the preparation of the same
US7946592B2 (en) 2004-11-02 2011-05-24 Komatsu Corporation Bearing seal
JP2012019146A (ja) * 2010-07-09 2012-01-26 Sony Corp 撮像装置、表示撮像装置および電子機器

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