JPS64766A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS64766A JPS64766A JP6916988A JP6916988A JPS64766A JP S64766 A JPS64766 A JP S64766A JP 6916988 A JP6916988 A JP 6916988A JP 6916988 A JP6916988 A JP 6916988A JP S64766 A JPS64766 A JP S64766A
- Authority
- JP
- Japan
- Prior art keywords
- hydrogen
- fluorine
- gas
- concentration
- polycrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 7
- 239000001257 hydrogen Substances 0.000 abstract 7
- 229910052739 hydrogen Inorganic materials 0.000 abstract 7
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 abstract 6
- 229910052731 fluorine Inorganic materials 0.000 abstract 6
- 239000011737 fluorine Substances 0.000 abstract 6
- 239000007789 gas Substances 0.000 abstract 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
- 239000010409 thin film Substances 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Landscapes
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6916988A JPS64766A (en) | 1987-03-23 | 1988-03-23 | Semiconductor device |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62-68305 | 1987-03-23 | ||
| JP6830587 | 1987-03-23 | ||
| JP62-69776 | 1987-03-24 | ||
| JP6916988A JPS64766A (en) | 1987-03-23 | 1988-03-23 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01766A JPH01766A (ja) | 1989-01-05 |
| JPS64766A true JPS64766A (en) | 1989-01-05 |
Family
ID=26409522
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6916988A Pending JPS64766A (en) | 1987-03-23 | 1988-03-23 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS64766A (ja) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4992839A (en) * | 1987-03-23 | 1991-02-12 | Canon Kabushiki Kaisha | Field effect thin film transistor having a semiconductor layer formed from a polycrystal silicon film containing hydrogen atom and halogen atom and process for the preparation of the same |
| US7946592B2 (en) | 2004-11-02 | 2011-05-24 | Komatsu Corporation | Bearing seal |
| JP2012019146A (ja) * | 2010-07-09 | 2012-01-26 | Sony Corp | 撮像装置、表示撮像装置および電子機器 |
-
1988
- 1988-03-23 JP JP6916988A patent/JPS64766A/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4992839A (en) * | 1987-03-23 | 1991-02-12 | Canon Kabushiki Kaisha | Field effect thin film transistor having a semiconductor layer formed from a polycrystal silicon film containing hydrogen atom and halogen atom and process for the preparation of the same |
| US7946592B2 (en) | 2004-11-02 | 2011-05-24 | Komatsu Corporation | Bearing seal |
| JP2012019146A (ja) * | 2010-07-09 | 2012-01-26 | Sony Corp | 撮像装置、表示撮像装置および電子機器 |
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