JPS6476730A - Mounting structure of semiconductor element - Google Patents
Mounting structure of semiconductor elementInfo
- Publication number
- JPS6476730A JPS6476730A JP23231687A JP23231687A JPS6476730A JP S6476730 A JPS6476730 A JP S6476730A JP 23231687 A JP23231687 A JP 23231687A JP 23231687 A JP23231687 A JP 23231687A JP S6476730 A JPS6476730 A JP S6476730A
- Authority
- JP
- Japan
- Prior art keywords
- agent
- silicon oxide
- mounting
- semiconductor element
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000003795 chemical substances by application Substances 0.000 abstract 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 230000035882 stress Effects 0.000 abstract 1
- 230000008646 thermal stress Effects 0.000 abstract 1
Landscapes
- Die Bonding (AREA)
Abstract
PURPOSE:To alleviate a thermal stress with a mounting agent and to realize mounting by a simple work by forming the agent of a silicon oxide film forming agent in the mounting structure of a semiconductor element. CONSTITUTION:The surface of a silicon substrate 1 formed with a silicon oxide film 2 having 0.5-1mum thick is coated with a silicon oxide film forming agent 5,, and a semiconductor element 3 formed with a predetermined element function unit 4 is placed at a predetermined position on a main surface. After the agent 5 is placed on the element, it is cured at 200 deg.C or higher to modify the quality of the silicon oxide, and the element 3 is secured to the substrate 1. Accordingly, the difference of the thermal expansion coefficients of the substrate 1, the element 3, and the mounting agent is alleviated, and a distortion stress generated due to the difference of the coefficients can be suppressed to an extremely small value.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62232316A JPH0752738B2 (en) | 1987-09-18 | 1987-09-18 | Mounting method of semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62232316A JPH0752738B2 (en) | 1987-09-18 | 1987-09-18 | Mounting method of semiconductor element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6476730A true JPS6476730A (en) | 1989-03-22 |
| JPH0752738B2 JPH0752738B2 (en) | 1995-06-05 |
Family
ID=16937292
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62232316A Expired - Lifetime JPH0752738B2 (en) | 1987-09-18 | 1987-09-18 | Mounting method of semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0752738B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0623955A3 (en) * | 1993-05-04 | 1995-04-26 | Motorola Inc | Semiconductor chip module. |
| WO2010001727A1 (en) | 2008-06-30 | 2010-01-07 | 株式会社Ihi | Laser annealing device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60254638A (en) * | 1984-05-31 | 1985-12-16 | Fujitsu Ltd | Glass-ceramic substrate for mounting semiconductor device |
| JPS613436A (en) * | 1984-06-18 | 1986-01-09 | Nec Corp | Manufacture of package for mounting semiconductor element |
| JPS6155847A (en) * | 1984-08-28 | 1986-03-20 | Nec Corp | Fluorescent character display tube |
| JPS62173725A (en) * | 1986-01-27 | 1987-07-30 | Nippon Telegr & Teleph Corp <Ntt> | Formation of glass film |
-
1987
- 1987-09-18 JP JP62232316A patent/JPH0752738B2/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60254638A (en) * | 1984-05-31 | 1985-12-16 | Fujitsu Ltd | Glass-ceramic substrate for mounting semiconductor device |
| JPS613436A (en) * | 1984-06-18 | 1986-01-09 | Nec Corp | Manufacture of package for mounting semiconductor element |
| JPS6155847A (en) * | 1984-08-28 | 1986-03-20 | Nec Corp | Fluorescent character display tube |
| JPS62173725A (en) * | 1986-01-27 | 1987-07-30 | Nippon Telegr & Teleph Corp <Ntt> | Formation of glass film |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0623955A3 (en) * | 1993-05-04 | 1995-04-26 | Motorola Inc | Semiconductor chip module. |
| WO2010001727A1 (en) | 2008-06-30 | 2010-01-07 | 株式会社Ihi | Laser annealing device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0752738B2 (en) | 1995-06-05 |
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