JPS6476762A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6476762A JPS6476762A JP62232305A JP23230587A JPS6476762A JP S6476762 A JPS6476762 A JP S6476762A JP 62232305 A JP62232305 A JP 62232305A JP 23230587 A JP23230587 A JP 23230587A JP S6476762 A JPS6476762 A JP S6476762A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- nitride film
- high concentration
- base region
- concentration base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title 1
- 150000004767 nitrides Chemical class 0.000 abstract 6
- 238000005530 etching Methods 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To form an emitter region and a high concentration base region in the manner of self alignment, and improve high frequency characteristics and manufacturing yield, by over-etching a little an oxide film arranged under the lower layer of a nitride film to define the high concentration base region, and forming the emitter region by utilizing said oxide film. CONSTITUTION:A nitride film 4 is subjected to patterning, and an oxide film 3 is subjected to over-etching by using said nitride film as a mask. An aperture 5 for forming a high concentration base region is formed in the state where the single side of the nitride film overhangs about 2000kt. An emitter region 10 is defined along the end-edge of the oxide film 3 used in the process to form the high concentration base region 6. The high concentration base region 6 is defined along the end-edge of the nitride film 4 overhanging on the oxide film 3. In the case of forming both of the regions 10, 6, the mutual overlapping is not required. Further, the overhang amount of the nitride film 4 can be made very small by controlling the over-etching amount of the oxide film 3, and the variability is small. As a result, the dimension between both of the regions can be stably made small, and improve the high frequency characteristics and the manufacturing yield.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62232305A JPS6476762A (en) | 1987-09-18 | 1987-09-18 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62232305A JPS6476762A (en) | 1987-09-18 | 1987-09-18 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6476762A true JPS6476762A (en) | 1989-03-22 |
Family
ID=16937126
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62232305A Pending JPS6476762A (en) | 1987-09-18 | 1987-09-18 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6476762A (en) |
-
1987
- 1987-09-18 JP JP62232305A patent/JPS6476762A/en active Pending
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