JPS6476784A - Edge light-emitting diode - Google Patents

Abstract

PURPOSE:To obtain an edge light-emitting diode capable of providing optical output having desirable temperature characteristics, by providing a region into which pulse current is injected and a region into which direct current is injected, within an active layer formed among semiconductor layers for providing a light-emitting region, and providing, on the emitting end face or rear end face, a semiconductor layer having a coefficient of absorption lower than that of the active layer with respect to light generated in the light-emitting region. CONSTITUTION:Following to formation of a linear groove, a first buried layer of P-type InP 5, a second buried layer of N-type InP 6, a third buried layer of P-type InP 7 and a contact layer of N-type InGaAsP 8 are formed. A P-type dopant is diffused through the contact layer 8 up to a clad layer 4 except a buried region 19 by using an SiO2 insulating film 10 as a mask, so that a diffused region 9 is formed. This region 9 serves as a current path through which current is injected linearly into an active layer 3. Then, P-type DC electrodes 11 and 12 are formed on the region 9 such that they are not contacted with each other. Further, an N-type electrode 13 is formed on a substrate 1. An emitting end face 14 and a rear end face 15 are formed. In this manner, it is possible to obtain a light-emitting diode capable of providing optical output which is not varied according to change in atmospheric temperature.