JPS647681A - Distributed reflex semiconductor laser - Google Patents

Distributed reflex semiconductor laser

Info

Publication number
JPS647681A
JPS647681A JP16346187A JP16346187A JPS647681A JP S647681 A JPS647681 A JP S647681A JP 16346187 A JP16346187 A JP 16346187A JP 16346187 A JP16346187 A JP 16346187A JP S647681 A JPS647681 A JP S647681A
Authority
JP
Japan
Prior art keywords
layer
conductivity type
layers
section
embedded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16346187A
Other languages
Japanese (ja)
Other versions
JPH0632345B2 (en
Inventor
Shinzo Suzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujikura Ltd
Japan Science and Technology Agency
Original Assignee
Fujikura Ltd
Research Development Corp of Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujikura Ltd, Research Development Corp of Japan filed Critical Fujikura Ltd
Priority to JP62163461A priority Critical patent/JPH0632345B2/en
Publication of JPS647681A publication Critical patent/JPS647681A/en
Publication of JPH0632345B2 publication Critical patent/JPH0632345B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2/00—Preparation of hydrocarbons from hydrocarbons containing a smaller number of carbon atoms
    • C07C2/02—Preparation of hydrocarbons from hydrocarbons containing a smaller number of carbon atoms by addition between unsaturated hydrocarbons
    • C07C2/04—Preparation of hydrocarbons from hydrocarbons containing a smaller number of carbon atoms by addition between unsaturated hydrocarbons by oligomerisation of well-defined unsaturated hydrocarbons without ring formation
    • C07C2/06—Preparation of hydrocarbons from hydrocarbons containing a smaller number of carbon atoms by addition between unsaturated hydrocarbons by oligomerisation of well-defined unsaturated hydrocarbons without ring formation of alkenes, i.e. acyclic hydrocarbons having only one carbon-to-carbon double bond
    • C07C2/08—Catalytic processes
    • C07C2/26—Catalytic processes with hydrides or organic compounds
    • C07C2/30—Catalytic processes with hydrides or organic compounds containing metal-to-carbon bond; Metal hydrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To make it possible to perform high-speed modulation with the extremely decreased capacitance value of an element by forming a striped section including the active zone and embedded layers on both sides, and forming a light bulb on the top of the removed section where a part of embedded layers have been removed until reach a contact layer, and a clad layer. CONSTITUTION:A contact layer 6 of a first conductivity type is laminated onto a semi-insulating substrate 5. A buffer layer 7 of the first conductivity type formed thereon, an undoped active layer 8, a depletion layer 9 of a second conductivity type, an external waveguide layer 10 of the second conductivity type covering layers 8 and 9, a diffraction grating formed at the boundary between layers 7 and 10, and a striped section where each layer above-mentioned has been formed in a long stripe form in the direction of light output, having a clad layer 11 of the second conductivity type laminated on the layer 10, are provided. Furthermore, layers 13-15 embedded in both sides of the striped section, a removed section 20 which has been removed until a part of the embedded layer reaches a contact layer 6, and ohmic electrodes 21 and 22 which are formed on the tops of the layer 11 and the contact layer 6 exposed by the removed section 20.
JP62163461A 1987-06-30 1987-06-30 Distributed reflection type semiconductor laser Expired - Lifetime JPH0632345B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62163461A JPH0632345B2 (en) 1987-06-30 1987-06-30 Distributed reflection type semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62163461A JPH0632345B2 (en) 1987-06-30 1987-06-30 Distributed reflection type semiconductor laser

Publications (2)

Publication Number Publication Date
JPS647681A true JPS647681A (en) 1989-01-11
JPH0632345B2 JPH0632345B2 (en) 1994-04-27

Family

ID=15774318

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62163461A Expired - Lifetime JPH0632345B2 (en) 1987-06-30 1987-06-30 Distributed reflection type semiconductor laser

Country Status (1)

Country Link
JP (1) JPH0632345B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11220205A (en) * 1998-01-30 1999-08-10 Sharp Corp Semiconductor laser device and method of manufacturing the same
JP2002344087A (en) * 2001-05-11 2002-11-29 Nippon Telegr & Teleph Corp <Ntt> Semi-insulating InP substrate, semiconductor optical device and semiconductor thin film forming method
WO2015056489A1 (en) * 2013-10-17 2015-04-23 シャープ株式会社 Heat-assisted-magnetic-recording head, semiconductor laser element, and method for manufacturing semiconductor laser element
JP2017130605A (en) * 2016-01-22 2017-07-27 日本電信電話株式会社 Semiconductor optical device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59155979A (en) * 1983-02-25 1984-09-05 Nec Corp Manufacture of semiconductor laser
JPS6288391A (en) * 1985-10-15 1987-04-22 Fujitsu Ltd Semiconductor light emitting device
JPS6292385A (en) * 1985-10-17 1987-04-27 Nec Corp Semiconductor laser

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59155979A (en) * 1983-02-25 1984-09-05 Nec Corp Manufacture of semiconductor laser
JPS6288391A (en) * 1985-10-15 1987-04-22 Fujitsu Ltd Semiconductor light emitting device
JPS6292385A (en) * 1985-10-17 1987-04-27 Nec Corp Semiconductor laser

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11220205A (en) * 1998-01-30 1999-08-10 Sharp Corp Semiconductor laser device and method of manufacturing the same
JP2002344087A (en) * 2001-05-11 2002-11-29 Nippon Telegr & Teleph Corp <Ntt> Semi-insulating InP substrate, semiconductor optical device and semiconductor thin film forming method
WO2015056489A1 (en) * 2013-10-17 2015-04-23 シャープ株式会社 Heat-assisted-magnetic-recording head, semiconductor laser element, and method for manufacturing semiconductor laser element
CN104854765A (en) * 2013-10-17 2015-08-19 夏普株式会社 Heat-assisted magnetic recording head, semiconductor laser element, and manufacturing method of semiconductor laser element
JP2017130605A (en) * 2016-01-22 2017-07-27 日本電信電話株式会社 Semiconductor optical device

Also Published As

Publication number Publication date
JPH0632345B2 (en) 1994-04-27

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