JPS6477130A - Cleaning of semiconductor - Google Patents

Cleaning of semiconductor

Info

Publication number
JPS6477130A
JPS6477130A JP23233787A JP23233787A JPS6477130A JP S6477130 A JPS6477130 A JP S6477130A JP 23233787 A JP23233787 A JP 23233787A JP 23233787 A JP23233787 A JP 23233787A JP S6477130 A JPS6477130 A JP S6477130A
Authority
JP
Japan
Prior art keywords
wafers
solution
permeating
immersed
cleaned
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP23233787A
Other languages
Japanese (ja)
Other versions
JPH0752728B2 (en
Inventor
Ritsuo Takizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP23233787A priority Critical patent/JPH0752728B2/en
Publication of JPS6477130A publication Critical patent/JPS6477130A/en
Publication of JPH0752728B2 publication Critical patent/JPH0752728B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE:To reduce the impurity especially such as Fe, Mn permeating into the surface of semiconductor wafers by around one figure compared with the conventional cleaning process by a method wherein, in the cleaning process of the semiconductor wafers, the wafers are immersed in a water solution containing nitric acid mixed with a bit of fluoric acid. CONSTITUTION:Solution 14 containing (60% HNO3):(50% HF)=2000:1 is heated by a heater 15 to be maintained at the temperature of around 80<=. Wafers 11 erected on a carrier 12 are immersed in the solution 14 for 5 minutes later to be cleaned up in running water in ultra high purity. After drying up process, oxide films are formed on these wafers 11 together with the wafers cleaned up by conventional process only using dual quartz tubes to prevent any external impurities such as metals from permeating into the wafers 11.
JP23233787A 1987-09-18 1987-09-18 Semiconductor cleaning method Expired - Lifetime JPH0752728B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23233787A JPH0752728B2 (en) 1987-09-18 1987-09-18 Semiconductor cleaning method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23233787A JPH0752728B2 (en) 1987-09-18 1987-09-18 Semiconductor cleaning method

Publications (2)

Publication Number Publication Date
JPS6477130A true JPS6477130A (en) 1989-03-23
JPH0752728B2 JPH0752728B2 (en) 1995-06-05

Family

ID=16937619

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23233787A Expired - Lifetime JPH0752728B2 (en) 1987-09-18 1987-09-18 Semiconductor cleaning method

Country Status (1)

Country Link
JP (1) JPH0752728B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03208900A (en) * 1990-01-12 1991-09-12 Nippon Steel Corp Washing method for silicon wafer
JPH04234118A (en) * 1990-09-26 1992-08-21 Internatl Business Mach Corp <Ibm> Reduction in introduced granular sub- stances on semiconductor wafer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03208900A (en) * 1990-01-12 1991-09-12 Nippon Steel Corp Washing method for silicon wafer
JPH04234118A (en) * 1990-09-26 1992-08-21 Internatl Business Mach Corp <Ibm> Reduction in introduced granular sub- stances on semiconductor wafer

Also Published As

Publication number Publication date
JPH0752728B2 (en) 1995-06-05

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