JPS6479092A - Single crystal pulling up device - Google Patents
Single crystal pulling up deviceInfo
- Publication number
- JPS6479092A JPS6479092A JP23612787A JP23612787A JPS6479092A JP S6479092 A JPS6479092 A JP S6479092A JP 23612787 A JP23612787 A JP 23612787A JP 23612787 A JP23612787 A JP 23612787A JP S6479092 A JPS6479092 A JP S6479092A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crucible
- melt
- crystal
- temp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title abstract 10
- 239000000155 melt Substances 0.000 abstract 3
- 238000010438 heat treatment Methods 0.000 abstract 2
- 239000011810 insulating material Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000002994 raw material Substances 0.000 abstract 2
- 238000001816 cooling Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To enable local temp. control and to more uniformly uniformize a single crystal with a device for pulling up the single crystal by a CZ method from a raw material melt and growing the single crystal by providing a heat insulating means between a crucible and a heating means for heating the melt. CONSTITUTION:The concentrical crucible 14 and a heater 15 are provided in a pressure vessel 16 and the concentrical heat insulating material 17 is disposed between the crucible 14 and the heater 15. The heat insulating material 17 is constituted in such a manner that said material can be freely vertically moved by means of a motor 19 via a hollow revolving shaft 14. The melt 13 of the crystal raw material is housed in the crucible 14 and is kept at a prescribed temp. by the heater 15 to pull up and grow the single crystal 9 by a pulling up shaft 2 provided with a seed crystal 1 at the front end. The temp. control to provide an arbitrary temp. gradient locally to the melt 13, the growth region of the single crystal 9 and the crystal cooling zone is thereby executed in the pulling-up process of the single crystal 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23612787A JPS6479092A (en) | 1987-09-22 | 1987-09-22 | Single crystal pulling up device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23612787A JPS6479092A (en) | 1987-09-22 | 1987-09-22 | Single crystal pulling up device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6479092A true JPS6479092A (en) | 1989-03-24 |
Family
ID=16996154
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23612787A Pending JPS6479092A (en) | 1987-09-22 | 1987-09-22 | Single crystal pulling up device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6479092A (en) |
-
1987
- 1987-09-22 JP JP23612787A patent/JPS6479092A/en active Pending
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