JPS6479364A - Material having c-axis oriented bi2wo6 crystal film and production thereof - Google Patents
Material having c-axis oriented bi2wo6 crystal film and production thereofInfo
- Publication number
- JPS6479364A JPS6479364A JP23679487A JP23679487A JPS6479364A JP S6479364 A JPS6479364 A JP S6479364A JP 23679487 A JP23679487 A JP 23679487A JP 23679487 A JP23679487 A JP 23679487A JP S6479364 A JPS6479364 A JP S6479364A
- Authority
- JP
- Japan
- Prior art keywords
- bi2wo6
- vapor deposited
- crystal
- axis oriented
- crystal film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title abstract 7
- 239000000463 material Substances 0.000 title abstract 4
- 238000001704 evaporation Methods 0.000 abstract 5
- 230000008020 evaporation Effects 0.000 abstract 3
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 239000002305 electric material Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
PURPOSE:To form a C-axis oriented Bi2WO6 crystal film in a low temp. range by repeating the operations of first evaporating Bi onto the surface of a base material on which a vapor deposited layer of SO3 is formed, then evaporating WO3 thereof to form the vapor deposited layer. CONSTITUTION:The vapor deposited WO3 layer is formed on the surface of the substrate consisting of an MgO single crystal, etc., in a vacuum vessel where a slight quantity of oxygen exists to form the base material having the (001) face of the WO3 single crystal on the surface. The substrate is heated to evaporate the Bi first so that the vapor deposited Bi2O2 layer corresponding to the thickness of the Bi2O2 in the C-axis direction of the unit lattice of the Bi2O6 crystal is formed thereon. The WO3 is then evaporated to form the vapor deposited layer corresponding to the thickness of the WO4 in the C-axis direction of the unit lattice of the Bi2WO6 crystal. The evaporation of the Bi and WO3 is repeated. The evaporation of the WO3 is otherwise substd. partly with the evaporation of MoO3. The material having the C-axis oriented Bi2WO6 crystal film which is preferably as a dielectric or piezo-electric material is thereby obtd.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23679487A JPH089768B2 (en) | 1987-09-21 | 1987-09-21 | Material having C-axis oriented Bi-2 under WO-6-based crystal film and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23679487A JPH089768B2 (en) | 1987-09-21 | 1987-09-21 | Material having C-axis oriented Bi-2 under WO-6-based crystal film and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6479364A true JPS6479364A (en) | 1989-03-24 |
| JPH089768B2 JPH089768B2 (en) | 1996-01-31 |
Family
ID=17005890
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23679487A Expired - Lifetime JPH089768B2 (en) | 1987-09-21 | 1987-09-21 | Material having C-axis oriented Bi-2 under WO-6-based crystal film and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH089768B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110273165A (en) * | 2019-07-24 | 2019-09-24 | 台州学院 | A kind of method that lower temperature plasma technology prepares oxygen defect type bismuth tungstate optoelectronic pole |
| CN117535649A (en) * | 2023-11-07 | 2024-02-09 | 南开大学 | Method for preparing two-dimensional wide-forbidden-band bismuth tungstate semiconductor nano-film by chemical vapor deposition |
| CN120117655A (en) * | 2025-03-04 | 2025-06-10 | 天津理工大学 | A bismuth sulfide/bismuth tungstate/tungsten trioxide photoanode and its preparation method and application in photoelectrocatalytic hydrogen evolution |
-
1987
- 1987-09-21 JP JP23679487A patent/JPH089768B2/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110273165A (en) * | 2019-07-24 | 2019-09-24 | 台州学院 | A kind of method that lower temperature plasma technology prepares oxygen defect type bismuth tungstate optoelectronic pole |
| CN117535649A (en) * | 2023-11-07 | 2024-02-09 | 南开大学 | Method for preparing two-dimensional wide-forbidden-band bismuth tungstate semiconductor nano-film by chemical vapor deposition |
| CN120117655A (en) * | 2025-03-04 | 2025-06-10 | 天津理工大学 | A bismuth sulfide/bismuth tungstate/tungsten trioxide photoanode and its preparation method and application in photoelectrocatalytic hydrogen evolution |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH089768B2 (en) | 1996-01-31 |
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