JPS6480037A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS6480037A
JPS6480037A JP62235902A JP23590287A JPS6480037A JP S6480037 A JPS6480037 A JP S6480037A JP 62235902 A JP62235902 A JP 62235902A JP 23590287 A JP23590287 A JP 23590287A JP S6480037 A JPS6480037 A JP S6480037A
Authority
JP
Japan
Prior art keywords
cations
opening
well
semiconductor substrate
irruption
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62235902A
Other languages
Japanese (ja)
Other versions
JP2800824B2 (en
Inventor
Yasuo Mori
Takeshi Kizaki
Yasushi Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62235902A priority Critical patent/JP2800824B2/en
Publication of JPS6480037A publication Critical patent/JPS6480037A/en
Application granted granted Critical
Publication of JP2800824B2 publication Critical patent/JP2800824B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To prevent contamination of an element part with the irruption of cations in its element part, by providing a second conductivity type semiconductor region in a first conductivity type semiconductor substrate at the lower side of a fuse and establishing its region at a positive electric potential with respect to the semiconductor substrate. CONSTITUTION:An n-well NW (n) is provided in a semiconductor substrate 1 at the lower side of a fuse F so that a guard ring 3 is surrounded. Then, Al wiring 5a is set up at a power source potential Vcc (for example 5V) and then, the guard ring 3 as well as the n-well NW (n) also is set up. at the power source potential Vcc. In this way, an electric field directed to the opening 9 of a passivation film 8 is generated in a field insulating film 2. As a result, when a semiconductor chip 1 is molded with resin, each cation receives a force at the side of the opening 9 under the action of an electrical field and moves in the field insulating film 2 in the direction of the arrow, even though Na<+>-like cations enter into the chip 1 through the opening 9 and then, the downward irruption of the cations is checked.
JP62235902A 1987-09-19 1987-09-19 Semiconductor integrated circuit device Expired - Lifetime JP2800824B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62235902A JP2800824B2 (en) 1987-09-19 1987-09-19 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62235902A JP2800824B2 (en) 1987-09-19 1987-09-19 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS6480037A true JPS6480037A (en) 1989-03-24
JP2800824B2 JP2800824B2 (en) 1998-09-21

Family

ID=16992927

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62235902A Expired - Lifetime JP2800824B2 (en) 1987-09-19 1987-09-19 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JP2800824B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997001188A1 (en) * 1995-06-23 1997-01-09 Siemens Aktiengesellschaft Semiconductor device with a fuse link and with a trough located below the fuse link
DE19835263A1 (en) * 1998-08-04 2000-02-17 Siemens Ag Integrated circuit with electrical connections that can be separated by the action of energy
JP2003338544A (en) * 2002-05-22 2003-11-28 Fujitsu Ltd Semiconductor device
JP2006156960A (en) * 2004-10-26 2006-06-15 Nec Electronics Corp Semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5863148A (en) * 1981-10-09 1983-04-14 Toshiba Corp semiconductor equipment
JPS6098664A (en) * 1983-11-02 1985-06-01 Mitsubishi Electric Corp semiconductor storage device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5863148A (en) * 1981-10-09 1983-04-14 Toshiba Corp semiconductor equipment
JPS6098664A (en) * 1983-11-02 1985-06-01 Mitsubishi Electric Corp semiconductor storage device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997001188A1 (en) * 1995-06-23 1997-01-09 Siemens Aktiengesellschaft Semiconductor device with a fuse link and with a trough located below the fuse link
DE19835263A1 (en) * 1998-08-04 2000-02-17 Siemens Ag Integrated circuit with electrical connections that can be separated by the action of energy
DE19835263C2 (en) * 1998-08-04 2000-06-21 Siemens Ag Integrated circuit with electrical connections that can be separated by the action of energy
US6302729B2 (en) 1998-08-04 2001-10-16 Infineon Technologies Ag Integrated circuit with electrical connection points that can be severed by the action of energy
JP2003338544A (en) * 2002-05-22 2003-11-28 Fujitsu Ltd Semiconductor device
JP2006156960A (en) * 2004-10-26 2006-06-15 Nec Electronics Corp Semiconductor device
KR100767037B1 (en) * 2004-10-26 2007-10-15 엔이씨 일렉트로닉스 가부시키가이샤 Semiconductor device
US8729663B2 (en) 2004-10-26 2014-05-20 Renesas Electronics Corporation Semiconductor device

Also Published As

Publication number Publication date
JP2800824B2 (en) 1998-09-21

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