JPS6480062A - High withstand voltage unipolar and bipolar transistor - Google Patents

High withstand voltage unipolar and bipolar transistor

Info

Publication number
JPS6480062A
JPS6480062A JP62238430A JP23843087A JPS6480062A JP S6480062 A JPS6480062 A JP S6480062A JP 62238430 A JP62238430 A JP 62238430A JP 23843087 A JP23843087 A JP 23843087A JP S6480062 A JPS6480062 A JP S6480062A
Authority
JP
Japan
Prior art keywords
region
transistor
fet
withstand voltage
bipolar transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62238430A
Other languages
Japanese (ja)
Inventor
Takashi Nakajima
Masaaki Ikegami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62238430A priority Critical patent/JPS6480062A/en
Publication of JPS6480062A publication Critical patent/JPS6480062A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To improve the apparent withstand voltage of a bipolar transistor by a method wherein the collector region of the bipolar transistor and the source region of a junction type FET are formed as a common region. CONSTITUTION:A base region 16a and an emitter region 17a are formed on the surface of the epitaxial layer 13 located on the left side of a collector region 15, and an n-p-n type transistor 1 is formed with said regions. The above- mentioned collector region 15 performs an additional function as the source region of an n-channel junction type FET. The above-mentioned FET 2 is composed of said source region 15, a gate region 20 and a drain region 17c. When the FET 2 is constituted as above and reverse voltage is applied to the n-p-n transistor 1, the FET 2 connected to the transistor 1 can be turned OFF. As a result, the apparent withstand voltage of the n-p-n transistor 1 can be enhanced.
JP62238430A 1987-09-21 1987-09-21 High withstand voltage unipolar and bipolar transistor Pending JPS6480062A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62238430A JPS6480062A (en) 1987-09-21 1987-09-21 High withstand voltage unipolar and bipolar transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62238430A JPS6480062A (en) 1987-09-21 1987-09-21 High withstand voltage unipolar and bipolar transistor

Publications (1)

Publication Number Publication Date
JPS6480062A true JPS6480062A (en) 1989-03-24

Family

ID=17030091

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62238430A Pending JPS6480062A (en) 1987-09-21 1987-09-21 High withstand voltage unipolar and bipolar transistor

Country Status (1)

Country Link
JP (1) JPS6480062A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017092474A (en) * 2015-11-10 2017-05-25 アナログ デバイシス グローバル FET-bipolar transistor combination

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017092474A (en) * 2015-11-10 2017-05-25 アナログ デバイシス グローバル FET-bipolar transistor combination

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