JPS6480077A - Conductivity-modulation mosfet - Google Patents

Conductivity-modulation mosfet

Info

Publication number
JPS6480077A
JPS6480077A JP62234879A JP23487987A JPS6480077A JP S6480077 A JPS6480077 A JP S6480077A JP 62234879 A JP62234879 A JP 62234879A JP 23487987 A JP23487987 A JP 23487987A JP S6480077 A JPS6480077 A JP S6480077A
Authority
JP
Japan
Prior art keywords
regions
region
running
conductivity
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62234879A
Other languages
Japanese (ja)
Inventor
Koichi Murakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Motor Co Ltd
Original Assignee
Nissan Motor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Motor Co Ltd filed Critical Nissan Motor Co Ltd
Priority to JP62234879A priority Critical patent/JPS6480077A/en
Publication of JPS6480077A publication Critical patent/JPS6480077A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To provide the title conductivity-modulation MOSFET with high resistance to latch up while decreasing the on-resistance by a method wherein p<+> and n<+> high concentration impurity regions are alternately formed below a low concentration anode region of the title MOSFET to form new current routes. CONSTITUTION:N<+> substrate regions 1 and p<+> substrate regions 2 are alternately formed in specified pitches below a p region 3. Thus, the route of electrons running from a source to an n base region 4 to be a drain through a MOS transistor is divided into two parts. One is running from the n base region 4 and an n<+> buffer region 13 to the regions 2 through the regions 3 while the other is running from the region 4 and the region 13 to the regions 1 through the region 3. Consequently, without increasing the hole injection for the conductivity modulation, the quantity of electrons running through the junction of the substrate regions 1, 2 and the regions 3 and 13 formed on the substrate regions 1, 2 can be increased while decreasing the on-resistance.
JP62234879A 1987-09-21 1987-09-21 Conductivity-modulation mosfet Pending JPS6480077A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62234879A JPS6480077A (en) 1987-09-21 1987-09-21 Conductivity-modulation mosfet

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62234879A JPS6480077A (en) 1987-09-21 1987-09-21 Conductivity-modulation mosfet

Publications (1)

Publication Number Publication Date
JPS6480077A true JPS6480077A (en) 1989-03-24

Family

ID=16977754

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62234879A Pending JPS6480077A (en) 1987-09-21 1987-09-21 Conductivity-modulation mosfet

Country Status (1)

Country Link
JP (1) JPS6480077A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03204976A (en) * 1989-10-20 1991-09-06 Fuji Electric Co Ltd Semiconductor device
DE4114349A1 (en) * 1990-05-10 1991-11-14 Fuji Electric Co Ltd Bipolar transistor with insulated gate - has drain zone with inset zone of high impregnation concn.
JPH0472669A (en) * 1990-05-10 1992-03-06 Fuji Electric Co Ltd Insulated-gate bipolar transistor
US5141889A (en) * 1990-11-30 1992-08-25 Motorola, Inc. Method of making enhanced insulated gate bipolar transistor
US5182626A (en) * 1989-09-20 1993-01-26 Mitsubishi Denki Kabushiki Kaisha Insulated gate bipolar transistor and method of manufacturing the same
EP0578973A1 (en) * 1992-06-12 1994-01-19 Kabushiki Kaisha Toshiba Method of forming short-circuiting regions for insulated gate semiconductor devices
US5289019A (en) * 1991-07-24 1994-02-22 Mitsubishi Denki Kabushiki Kaisha Insulated gate bipolar transistor
JP2003031809A (en) * 2001-07-17 2003-01-31 Mitsubishi Electric Corp Insulated gate bipolar transistor

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5182626A (en) * 1989-09-20 1993-01-26 Mitsubishi Denki Kabushiki Kaisha Insulated gate bipolar transistor and method of manufacturing the same
US5292672A (en) * 1989-09-20 1994-03-08 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing an insulated gate bipolar transistor
JPH03204976A (en) * 1989-10-20 1991-09-06 Fuji Electric Co Ltd Semiconductor device
DE4114349A1 (en) * 1990-05-10 1991-11-14 Fuji Electric Co Ltd Bipolar transistor with insulated gate - has drain zone with inset zone of high impregnation concn.
JPH0472669A (en) * 1990-05-10 1992-03-06 Fuji Electric Co Ltd Insulated-gate bipolar transistor
DE4114349C2 (en) * 1990-05-10 2001-05-31 Fuji Electric Co Ltd Insulated Gate Bipolar Transistor (IGBT)
US5141889A (en) * 1990-11-30 1992-08-25 Motorola, Inc. Method of making enhanced insulated gate bipolar transistor
US5289019A (en) * 1991-07-24 1994-02-22 Mitsubishi Denki Kabushiki Kaisha Insulated gate bipolar transistor
EP0578973A1 (en) * 1992-06-12 1994-01-19 Kabushiki Kaisha Toshiba Method of forming short-circuiting regions for insulated gate semiconductor devices
JP2003031809A (en) * 2001-07-17 2003-01-31 Mitsubishi Electric Corp Insulated gate bipolar transistor
US7250639B1 (en) 2001-07-17 2007-07-31 Mitsubishi Denki Kabushiki Kaisha Insulated gate bipolar transistor

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