JPS6480088A - Manufacture of semiconductor laser - Google Patents
Manufacture of semiconductor laserInfo
- Publication number
- JPS6480088A JPS6480088A JP23612487A JP23612487A JPS6480088A JP S6480088 A JPS6480088 A JP S6480088A JP 23612487 A JP23612487 A JP 23612487A JP 23612487 A JP23612487 A JP 23612487A JP S6480088 A JPS6480088 A JP S6480088A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- grown
- strip
- coated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 238000000034 method Methods 0.000 abstract 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- 229910017401 Au—Ge Inorganic materials 0.000 abstract 1
- 230000000903 blocking effect Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Weting (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To lessen the effect of a waveguide layer, which is grown on the side part of a strip, by a method wherein the form of the section of the strip is formed into a roughly semicircular form in a stripe etching process. CONSTITUTION:An N-type Ga0.6Al0.4As clad layer 2, an undoped Ga0.9Al0.06As active layer 3, a P-type Ga0.6Al0.4As clad layer 4 and an N-type Ga0.6Al0.4As current blocking layer 5 are formed in order on a face orientation (100) N-type GaAs substrate 1 by an MOCVD method. Then, a photoresist 11 is coated on the layer 5, a striped window is formed on this, and the layers 5 and 4 are etched halfway using this window as a mask to form a striped groove 12. Then, the resist 11 is removed and a P-type Ga0.7Al0.3As waveguide layer 6 is grown. Then, a P-type Ga0.6Al0.4As coated layer 7 and a P-type GaAs cap layer 8 are grown. Then, a Ti/Pt/Au layer and an Au-Ge/Au layer are respectively adhered on a P side and on an N side as an electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23612487A JPS6480088A (en) | 1987-09-22 | 1987-09-22 | Manufacture of semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23612487A JPS6480088A (en) | 1987-09-22 | 1987-09-22 | Manufacture of semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6480088A true JPS6480088A (en) | 1989-03-24 |
Family
ID=16996107
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23612487A Pending JPS6480088A (en) | 1987-09-22 | 1987-09-22 | Manufacture of semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6480088A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101878567A (en) * | 2007-11-30 | 2010-11-03 | 奥斯兰姆奥普托半导体有限责任公司 | Method for producing a radiation-emitting component and radiation-emitting component |
-
1987
- 1987-09-22 JP JP23612487A patent/JPS6480088A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101878567A (en) * | 2007-11-30 | 2010-11-03 | 奥斯兰姆奥普托半导体有限责任公司 | Method for producing a radiation-emitting component and radiation-emitting component |
| JP2011505069A (en) * | 2007-11-30 | 2011-02-17 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | LIGHT EMITTING DEVICE MANUFACTURING METHOD AND LIGHT EMITTING DEVICE |
| US9018641B2 (en) | 2007-11-30 | 2015-04-28 | CSRAM Opto Semiconductors GmbH | Method for producing a radiation-emitting component and radiation-emitting component |
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