JPS6484636A - Manufacture of mos gate array - Google Patents

Manufacture of mos gate array

Info

Publication number
JPS6484636A
JPS6484636A JP24106587A JP24106587A JPS6484636A JP S6484636 A JPS6484636 A JP S6484636A JP 24106587 A JP24106587 A JP 24106587A JP 24106587 A JP24106587 A JP 24106587A JP S6484636 A JPS6484636 A JP S6484636A
Authority
JP
Japan
Prior art keywords
mosfet
gates
gate
gate array
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24106587A
Other languages
Japanese (ja)
Inventor
Ichiro Tomioka
Masahiro Ueda
Toshiaki Hanibuchi
Yoshihiro Okuno
Takahiko Arakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP24106587A priority Critical patent/JPS6484636A/en
Publication of JPS6484636A publication Critical patent/JPS6484636A/en
Pending legal-status Critical Current

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  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

PURPOSE:To enhance the freedom in the wiring of a circuit by a method wherein the fellow gates of opposed MOSFETs are previously connected to each other and a gate of the gates is arbitrarily cut without newly adding a mask and a process to a wiring that follows. CONSTITUTION:A gate array is constituted of P-type source/drain regions 21, N-type source/drain regions 22 and gates 23 common to P- and N-MOSFETs. The gates of the P-MOSFET and the gates of the N-MOSFET to oppose to the P-MOSFET are previously connected to each other and are formed to use as the common gates 23 and in case a gate signal of the P-MOSFET and a gate signal of the N-MOSFET to oppose to the P-MOSFET are different from each other, the gate 23 is cut at a cutting place 25.
JP24106587A 1987-09-26 1987-09-26 Manufacture of mos gate array Pending JPS6484636A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24106587A JPS6484636A (en) 1987-09-26 1987-09-26 Manufacture of mos gate array

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24106587A JPS6484636A (en) 1987-09-26 1987-09-26 Manufacture of mos gate array

Publications (1)

Publication Number Publication Date
JPS6484636A true JPS6484636A (en) 1989-03-29

Family

ID=17068776

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24106587A Pending JPS6484636A (en) 1987-09-26 1987-09-26 Manufacture of mos gate array

Country Status (1)

Country Link
JP (1) JPS6484636A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7548387B2 (en) * 2005-04-06 2009-06-16 Carl Zeiss Smt Ag Optical imaging device
JP2014010839A (en) * 2012-06-27 2014-01-20 Samsung Electronics Co Ltd Semiconductor integrated circuit, and design method and manufacturing method of the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7548387B2 (en) * 2005-04-06 2009-06-16 Carl Zeiss Smt Ag Optical imaging device
JP2014010839A (en) * 2012-06-27 2014-01-20 Samsung Electronics Co Ltd Semiconductor integrated circuit, and design method and manufacturing method of the same

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