JPS6484772A - Semiconductor laser and semiconductor laser light source device - Google Patents

Semiconductor laser and semiconductor laser light source device

Info

Publication number
JPS6484772A
JPS6484772A JP24299187A JP24299187A JPS6484772A JP S6484772 A JPS6484772 A JP S6484772A JP 24299187 A JP24299187 A JP 24299187A JP 24299187 A JP24299187 A JP 24299187A JP S6484772 A JPS6484772 A JP S6484772A
Authority
JP
Japan
Prior art keywords
laser diode
electric heating
semiconductor laser
heating body
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24299187A
Other languages
Japanese (ja)
Inventor
Takashi Shiyouji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP24299187A priority Critical patent/JPS6484772A/en
Publication of JPS6484772A publication Critical patent/JPS6484772A/en
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To prevent an optical output from fluctuating due to a variation in temperature by a method wherein a laser diode and an electric heating body are formed on a common wafer to be adjacent to each other or to be close to each other and these are united as one chip. CONSTITUTION:A laser diode chip 13 is constituted in such a way that a general laser diode 13L and an electric heating body 13H are formed in an active layer 13A to be adjacent to each other. The laser diode 13L and a laser diode whose characteristic is identical to that of the diode are formed side by side on one wafer; after that, an overcurrent flows to this laser diode; this diode is broken down and is used as the electric heating body 13H. Accordingly, an electric heating characteristic of the electric heating body 13H is nearly equal to that of the laser diode 13L. The laser diode chip 13 is arranged in such a way that the active layer 13A is perpendicular to a stem 11; a laser beam 14 radiated from the laser diode 13L is irradiated to the outside of a case through a window 16 installed in the central part of a cap 15.
JP24299187A 1987-09-28 1987-09-28 Semiconductor laser and semiconductor laser light source device Pending JPS6484772A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24299187A JPS6484772A (en) 1987-09-28 1987-09-28 Semiconductor laser and semiconductor laser light source device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24299187A JPS6484772A (en) 1987-09-28 1987-09-28 Semiconductor laser and semiconductor laser light source device

Publications (1)

Publication Number Publication Date
JPS6484772A true JPS6484772A (en) 1989-03-30

Family

ID=17097269

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24299187A Pending JPS6484772A (en) 1987-09-28 1987-09-28 Semiconductor laser and semiconductor laser light source device

Country Status (1)

Country Link
JP (1) JPS6484772A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001326418A (en) * 2000-05-16 2001-11-22 Yokogawa Electric Corp Semiconductor laser light source and method of modulating semiconductor laser light source
JP2005101039A (en) * 2003-09-22 2005-04-14 Furukawa Electric Co Ltd:The Tunable laser, tunable laser array element and control method thereof
JP2007180378A (en) * 2005-12-28 2007-07-12 Sumitomo Electric Ind Ltd Laser module and control method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001326418A (en) * 2000-05-16 2001-11-22 Yokogawa Electric Corp Semiconductor laser light source and method of modulating semiconductor laser light source
JP2005101039A (en) * 2003-09-22 2005-04-14 Furukawa Electric Co Ltd:The Tunable laser, tunable laser array element and control method thereof
JP2007180378A (en) * 2005-12-28 2007-07-12 Sumitomo Electric Ind Ltd Laser module and control method thereof

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