JPS648679A - Photovoltaic device - Google Patents

Photovoltaic device

Info

Publication number
JPS648679A
JPS648679A JP62164725A JP16472587A JPS648679A JP S648679 A JPS648679 A JP S648679A JP 62164725 A JP62164725 A JP 62164725A JP 16472587 A JP16472587 A JP 16472587A JP S648679 A JPS648679 A JP S648679A
Authority
JP
Japan
Prior art keywords
extensions
width
zones
photovoltaic device
generating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62164725A
Other languages
Japanese (ja)
Inventor
Noritoshi Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP62164725A priority Critical patent/JPS648679A/en
Publication of JPS648679A publication Critical patent/JPS648679A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To provide a photovoltaic device in which a current of maximum limit can be output within a predetermined allowable current value even in a low illumination state in a room or in a high illumination state in the open air by setting the width of a connecting extension for connecting in series adjacent opposite ends of generating zones in response to the size of the zone. CONSTITUTION:A photovoltaic device is composed by connecting in series generating zones (a)-(c) including amorphous semiconductor layers 3a-3c on an insulating substrate 1 made of glass or the like. When the length of the size of one generating zone in an X direction is L1 and the length of sizes of connecting extensions 5a, 5b in Y direction is L2 (L1<=L2), the width (x) of the extensions 5a, 5b, i.e., the superposing connector of electrodes is set to (L1)<2>/2L2<=X<=L2. That is, the width (x) is set to (L1)<2>/2L2 or more to reduce the connecting resistance determined by the ratio of the widths of the extensions 5a, 5b to the sides of the zones (a)-(c) as compared with the device having conventional first connecting means. Thus, even if it is used in the open air, the limit of the output current value can be improved.
JP62164725A 1987-06-30 1987-06-30 Photovoltaic device Pending JPS648679A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62164725A JPS648679A (en) 1987-06-30 1987-06-30 Photovoltaic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62164725A JPS648679A (en) 1987-06-30 1987-06-30 Photovoltaic device

Publications (1)

Publication Number Publication Date
JPS648679A true JPS648679A (en) 1989-01-12

Family

ID=15798708

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62164725A Pending JPS648679A (en) 1987-06-30 1987-06-30 Photovoltaic device

Country Status (1)

Country Link
JP (1) JPS648679A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220114654A (en) 2020-08-20 2022-08-17 후지 덴키 가부시키가이샤 electric dust collector

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5693377A (en) * 1979-11-02 1981-07-28 Licentia Gmbh Solar battery and solar battery group formed of same
JPS58219774A (en) * 1982-06-14 1983-12-21 Semiconductor Energy Lab Co Ltd Photoelectric conversion device
JPS6013554B2 (en) * 1977-04-13 1985-04-08 株式会社日立製作所 Reloadable image output device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6013554B2 (en) * 1977-04-13 1985-04-08 株式会社日立製作所 Reloadable image output device
JPS5693377A (en) * 1979-11-02 1981-07-28 Licentia Gmbh Solar battery and solar battery group formed of same
JPS58219774A (en) * 1982-06-14 1983-12-21 Semiconductor Energy Lab Co Ltd Photoelectric conversion device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220114654A (en) 2020-08-20 2022-08-17 후지 덴키 가부시키가이샤 electric dust collector

Similar Documents

Publication Publication Date Title
DE3884058D1 (en) High voltage semiconductor with integrated low voltage circuit.
DE69417300D1 (en) Composite circuit board, semiconductor power module with this composite circuit board and manufacturing method therefor
DE69127852D1 (en) Diode and semiconductor device with a diode
DE69125390D1 (en) Lateral bipolar transistor structure with integrated control circuit and integrated power transistor and their manufacturing process
JPS5710973A (en) Semiconductor device
DE69124041D1 (en) Noise reducing element and electrical circuit with this element
MY108561A (en) Electrode for semiconductor element and semiconductor device having the electrode and process for producing the same.
EP0644549A3 (en) Method of flash writing with small operation current and semiconductor memory circuit according to the method.
JPS564290A (en) Superconductive element
JPS648679A (en) Photovoltaic device
TW344117B (en) Integrated circuit with interlevel dielectric
TW343342B (en) Field emission device arc-suppressor
EP0229728A3 (en) Pulse forming networks
JPS5332362A (en) Constant voltage electronic circuit
JPS5563859A (en) Field-effect transistor integrated circuit
RU2012128C1 (en) Emitter follower
JPS54147456A (en) Transistor ballast power unit
RU2012126C1 (en) Emitter follower
JPS5333081A (en) Semiconductor light emitting device
JPS6489701A (en) Balun device
JPS56153773A (en) Semiconductor integrated circuit device
JPS5638617A (en) Constant voltage element
JPS5788757A (en) Preparation of semiconductor device
DE69401441D1 (en) Semiconductor laser with low threshold current and associated manufacturing process
JPS5354989A (en) Semiconductor device