JPS648690A - External resonator type semiconductor laser device - Google Patents
External resonator type semiconductor laser deviceInfo
- Publication number
- JPS648690A JPS648690A JP16446887A JP16446887A JPS648690A JP S648690 A JPS648690 A JP S648690A JP 16446887 A JP16446887 A JP 16446887A JP 16446887 A JP16446887 A JP 16446887A JP S648690 A JPS648690 A JP S648690A
- Authority
- JP
- Japan
- Prior art keywords
- reflectivity
- face
- coated
- layer
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000002310 reflectometry Methods 0.000 abstract 6
- 239000010410 layer Substances 0.000 abstract 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 3
- 230000010355 oscillation Effects 0.000 abstract 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 2
- 229910052593 corundum Inorganic materials 0.000 abstract 2
- 230000003287 optical effect Effects 0.000 abstract 2
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 abstract 1
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 1
- 239000002356 single layer Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To effectively suppress the competition of mode hop to the proximity mode of an oscillation axis mode, multimode or the proximity mode even if returning light exists and to eliminate the necessity of using an optical isolator by constructing the title device so as to have a high reflectivity for an oscillation axis mode wavelength in the reflectivity of the forward emitting end face of a semiconductor laser element. CONSTITUTION:A VSIS semiconductor laser element 1 having an AlGaAs layer as an active layer on a GaAs substrate, and an external reflecting member 3 made of a GaAs chip coated with a dielectric multilayered film 2 on the cleaved end face for providing high reflectivity are secured at an interval of 60mum of external resonator length. The forward emitting end face 6 of the element 1 is coated with multilayers of Al2O3 layer 5 and an a-Si layer 7 to set its reflectivity to 0.5, and the rearward emitting end face 8 is coated with an Al2O3 5 single layer in thickness corresponding to 1/2 of an optical oscillation axis mode wavelength to set its reflectivity to 0.32. The cleaved end face 9 of a GaAs chip is coated with multilayers of the layers 5, 7 to set its reflectivity to 0.95.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16446887A JPS648690A (en) | 1987-06-30 | 1987-06-30 | External resonator type semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16446887A JPS648690A (en) | 1987-06-30 | 1987-06-30 | External resonator type semiconductor laser device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS648690A true JPS648690A (en) | 1989-01-12 |
Family
ID=15793752
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16446887A Pending JPS648690A (en) | 1987-06-30 | 1987-06-30 | External resonator type semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS648690A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000060710A1 (en) * | 1999-03-31 | 2000-10-12 | Japan As Represented By Director General Of Agency Of Industrial Science And Technology | Surface optical amplifier and method of producing the same |
| KR100763009B1 (en) * | 2006-07-25 | 2007-10-17 | 재단법인 포항지능로봇연구소 | Joint device and hand device of robot using same |
-
1987
- 1987-06-30 JP JP16446887A patent/JPS648690A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000060710A1 (en) * | 1999-03-31 | 2000-10-12 | Japan As Represented By Director General Of Agency Of Industrial Science And Technology | Surface optical amplifier and method of producing the same |
| US6480516B1 (en) | 1999-03-31 | 2002-11-12 | Japan As Represented By Secretary Of Agency Of Industrial Science And Technology | Surface semiconductor optical amplifier with transparent substrate |
| KR100763009B1 (en) * | 2006-07-25 | 2007-10-17 | 재단법인 포항지능로봇연구소 | Joint device and hand device of robot using same |
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