JPS648801B2 - - Google Patents

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Publication number
JPS648801B2
JPS648801B2 JP55012236A JP1223680A JPS648801B2 JP S648801 B2 JPS648801 B2 JP S648801B2 JP 55012236 A JP55012236 A JP 55012236A JP 1223680 A JP1223680 A JP 1223680A JP S648801 B2 JPS648801 B2 JP S648801B2
Authority
JP
Japan
Prior art keywords
layer
refractive index
film
reflection
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55012236A
Other languages
Japanese (ja)
Other versions
JPS56109301A (en
Inventor
Yoshio Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Optical Co Ltd
Original Assignee
Tokyo Optical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Optical Co Ltd filed Critical Tokyo Optical Co Ltd
Priority to JP1223680A priority Critical patent/JPS56109301A/en
Publication of JPS56109301A publication Critical patent/JPS56109301A/en
Publication of JPS648801B2 publication Critical patent/JPS648801B2/ja
Granted legal-status Critical Current

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Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11Anti-reflection coatings
    • G02B1/113Anti-reflection coatings using inorganic layer materials only
    • G02B1/115Multilayers

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Surface Treatment Of Optical Elements (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

本発明は可視及びその近傍域におけるガラス、
結晶等の無機質の基板に対する多層反射防止膜で
あつて、構成膜の中に不均質膜と下地反射調整膜
とを含み、特に200℃〜400℃の下地温度で真空蒸
着して膜の強度を高めることに関する。 従来、種々の屈折率をもつた基板に対して常に
効率のよい反射防止膜を形成するには、基板の屈
折率から定まる適当な屈折率の物質を少くとも一
層は必要とした。 しかし実際には蒸着可能な物質には限度があ
り、反射防止可能な基板の屈折率は限られてい
た。そこで膜物質の不足を補うために、特公昭49
−29590では屈折率を異にする二種類以上の蒸着
物質の粉末を均一混合して所望の屈折率を得、特
公昭45−6193では多数層に分割してそれぞれの層
に異なる屈折率の物質を蒸着してそれらの合成の
屈折率により近似している。 一方実際の蒸着においては、単一物質を蒸着し
ても膜も形成する原子・分子の結晶成長が膜の厚
さ位置により異なる等のため、厚さ方向に屈折率
が異なる、いわゆる「不均質」という性質が現わ
れ、計算通りの特性が得られないという問題が起
きている。この「不均質」は蒸着薄膜一般にいえ
ることがあるが、特に高屈折率を有する金属酸化
物については顕著である。 また、厚さにも影響され、膜厚λ0/4の場合は
蒸着膜の上部・下部の平均値を用いて均質膜とし
ても誤差は少ないが、膜厚λ0/2の場合の誤差は
大きくなる。特公昭49−15503では膜厚λ0/2の
層をλ0/4の2層に分割して不均質の影響を減少
させている。従つて以上の技術によつて実用化さ
れている多層反射防止膜は実際の層数が3層以上
で作業が複雑であるにもかかわらず、性能は3層
膜構造と同じである。 一方、4層膜構造としては第1表に示す論理値
及び実施例の値が知られており、それらの特性は
第1図に示す通りである。
The present invention provides glass in the visible and near-visible range,
It is a multilayer antireflection coating for an inorganic substrate such as a crystal, and the constituent films include a heterogeneous film and a base reflection adjustment film, and the strength of the film is increased by vacuum deposition at a base temperature of 200°C to 400°C. Concerning enhancing. Conventionally, in order to consistently form an efficient antireflection film on substrates having various refractive indices, at least one layer of material having an appropriate refractive index determined from the refractive index of the substrate has been required. However, in reality, there are limits to the materials that can be deposited, and the refractive index of a substrate that can prevent reflection is limited. Therefore, in order to compensate for the lack of membrane materials,
-29590 obtains the desired refractive index by uniformly mixing powders of two or more vapor deposited substances with different refractive indexes, and in Japanese Patent Publication No. 45-6193, it is divided into multiple layers and each layer is made of a material with a different refractive index. The refractive index is approximated by their composite refractive index. On the other hand, in actual deposition, even if a single substance is deposited, the crystal growth of the atoms and molecules that form the film differs depending on the thickness position of the film, so the refractive index differs in the thickness direction. ” appears, causing a problem in which properties cannot be obtained as calculated. This "heterogeneity" can be said to apply to deposited thin films in general, but is particularly noticeable in metal oxides having a high refractive index. It is also affected by the thickness; in the case of a film thickness of λ 0 /4, there is little error even if it is a homogeneous film by using the average value of the upper and lower parts of the deposited film, but in the case of a film thickness of λ 0 /2, the error is growing. In Japanese Patent Publication No. 49-15503, a layer with a thickness of λ 0 /2 is divided into two layers with a thickness of λ 0 /4 to reduce the influence of non-uniformity. Therefore, although the multilayer antireflection coating that has been put into practical use using the above technology has three or more layers and is complicated to work with, its performance is the same as that of a three-layer structure. On the other hand, as for the four-layer film structure, the logical values and the values of the examples shown in Table 1 are known, and their characteristics are as shown in FIG.

【表】 第1表の屈折率は、実施例の第2層については
上部・下部の屈折率であり、その他については平
均屈折率である。第1図において実際の残留反射
が第2層の不均質によつて増加するということが
推定される。なお、蒸着膜の不均質性は、蒸着時
の基板温度を低くすることによりある程度改善で
きるが、同時に膜の強度を減少させるため、蒸着
膜としての実用上の要求を満たすことかできな
い。 以上の従来技術に対し、本発明は次のことを目
的としている。 (a) 4層で、反射防止帯の波長幅と残留反射とを
改善すること。 (b) 基板の屈折率が変化しても、第3層、第4層
の調整により、第3層、第4層、基板からなる
仮想下地(基板、第4層、第3層をまとめてい
う)の表面反射率を一定にして、第1層・第2
層は常に同一であること。 (c) 蒸着時の基板温度が250℃以上である強い膜
であること。 従つて、第2層は不均質膜であり、第1層は
MgF2を選んだ。一方基板に隣接する第3層・第
4層を基板反射調整膜とし、基板と基板反射調整
膜とにより仮想下地が構成される。そして仮想下
地を第1層のMgF2及び第2層の不均質膜により
反射防止すると考えるとき、仮想下地の反射率が
どのようになつていれば第1層、第2層によつて
効果的に反射防止ができるか、あるいは下地反射
調整膜の屈折率や基板の屈折率と第2層の不均質
の度合との関係が反射防止にどのように影響する
かを検討した。第3層、第4層の平均屈折率を
n3,n4、基板の屈折率をnsとし、基準波長におけ
る仮想下地の反射率γ0及びその微分係数Δγ0は次
のようになる。 γ0=n4 2−nSn3 2/n4 2+nSn3 2 Δγ0=2n3(n3+n4)(nS 2n3−n4 3)/(n4 2+nSn3 2
2 ここで仮想下地の仮想屈折率をN、仮想屈折率
の波長に対する変化率をΔNとすると、 γ0=1−N/1+N Δγ0=2ΔN/(1+N)2 N=nSn3 2/n4 2 ΔN=n3(n3+n4)(nS 2n3−n4 3)/n4 4 となる。ところで、第2層が均質膜の場合と仮定
すると、この場合の反射率γは次式で求められ
る。 γ=n1 2−N/n1 2+N 従つて、この場合波長λ0における反射を0にす
る条件は N=n1 2 である。しかしながら、実際には多少の残留反射
が残つても広い波長領域で反射防止をしたい為
に、N=n1 2の条件からずらす必要がある。この
ずれ量は第2層の屈折率の関数となるので、この
関数をf1とすると、仮想屈折率Nは N=n1 2+f1(n2) として表わされる。次に、第2層が不均質膜であ
る場合を考えると、仮想屈折率Nは第1近似とし
て、 n2=(nH+nL)/2 nH:第2層の不均質膜の第3層側の屈折率 nL:第2層の不均質膜の第1層側の屈折率 となるが、不均質の度合すなわちnHとnLとの差の
大小によつてそのずれ量は変化するので、そのこ
とも考慮すると、仮想屈折率Nは、(nH+nL)/
2、及び、(nH−nL)のそれぞれの関であるf1,f2
として下記式で表わされる。なお、ここで示す4
層反射防止膜の第2層は一般的に高い屈折率のも
のとされ、実用的な物質をλ/2の厚さだけ積層
した際に生ずる不均質層の上部の屈折率は経験的
に2.0〜2.35程度となり、不均質層の度合を示す
Δn2=nH−nLは0.05〜0.35程度となる。 N=n1 2+f1(nH+nL/2)+f2(nH−nL) この上式の関数f1及びf2は数学的には定められ
ず、帰納的に求めざるを得ない。そのため、本発
明では第1層がMgF2でn1 2≒1.91とし、前述の
nH,nLを種々変化させシユミレーシヨンを行い、
可視域全体の残留反射を少なくするためには、関
数f1,f2は下記式で近似されることを確かめたも
のである。 f1(nH+nL/2)≒−1.11+nH+nL/4 f2(nH−nL)≒nH−nL/2 従つて、N=1.91−1.11+nH+nL/4+nH−nL/2= 0.8+3nH−nL/4となる。 また、ΔNについても同様にn1;(nH+nL)/
2、(nH−nL)に関する項も含むことが考えられ、
前述と同様にシユミレーシヨンを行い、下記式で
近似されることを確かめたものである。 ΔN=−6.7+7/4(nH+nL)−2(nH+nL) =−6.7−nH−15nL/4 N、ΔNの基準値からのずれの許容範囲α,β
は、残留反射率を計算して実用可能な範囲として −0.1≦α≦0.1 −0.4≦β≦0.4 を定めた。 次に本発明の実施例を示す。第1実施例は第2
表に示すものである。第2層はTiO2を標準的方
法で蒸着する。第3層、第4層は二つの蒸発源か
ら連続的に蒸着する(同時蒸着法)。第2図は第
1実施例の残留反射のグラフである。第3図は仮
想下地の振幅反射率の軌跡のグラフであり、基準
波長λ0=510nmを中心にしてかなり広い範囲にお
いて振幅反射率が等しいことがわかる。
[Table] The refractive indices in Table 1 are the upper and lower refractive indices for the second layer of the examples, and the average refractive index for the others. It is deduced in FIG. 1 that the actual residual reflection is increased by the inhomogeneity of the second layer. Incidentally, the heterogeneity of the deposited film can be improved to some extent by lowering the substrate temperature during deposition, but at the same time the strength of the film is reduced, making it impossible to meet the practical requirements of the deposited film. In contrast to the above conventional techniques, the present invention has the following objects. (a) Improve the wavelength width of the antireflection band and residual reflection using four layers. (b) Even if the refractive index of the substrate changes, by adjusting the third and fourth layers, a virtual base consisting of the third layer, fourth layer, and substrate (the substrate, fourth layer, and third layer are collectively referred to as ) with the surface reflectance of the first and second layers kept constant.
Layers must always be the same. (c) It must be a strong film with a substrate temperature of 250°C or higher during deposition. Therefore, the second layer is a heterogeneous film and the first layer is
I chose MgF2 . On the other hand, the third and fourth layers adjacent to the substrate are used as substrate reflection adjustment films, and the substrate and the substrate reflection adjustment film constitute a virtual base. When considering that the virtual base is anti-reflective by the first layer of MgF 2 and the second layer of a heterogeneous film, the reflectance of the virtual base should be such that the first and second layers are effective. We investigated whether anti-reflection can be achieved in the first layer, and how the relationship between the refractive index of the underlying reflection adjusting film, the refractive index of the substrate, and the degree of non-uniformity of the second layer affects anti-reflection. The average refractive index of the third and fourth layers is
Where n 3 , n 4 and the refractive index of the substrate are n s , the reflectance γ 0 of the virtual base at the reference wavelength and its differential coefficient Δγ 0 are as follows. γ 0 = n 4 2 −n S n 3 2 /n 4 2 +n S n 3 2 Δγ 0 = 2n 3 (n 3 + n 4 ) (n S 2 n 3 − n 4 3 ) / (n 4 2 + n S n 3 2
) 2Here , if the virtual refractive index of the virtual base is N and the rate of change of the virtual refractive index with respect to wavelength is ΔN, then γ 0 =1−N/1+N Δγ 0 =2ΔN/(1+N) 2 N=n S n 3 2 /n 4 2 ΔN=n 3 (n 3 + n 4 ) (n S 2 n 3 − n 4 3 )/n 4 4 . By the way, assuming that the second layer is a homogeneous film, the reflectance γ in this case is determined by the following equation. γ=n 1 2 −N/n 1 2 +N Therefore, in this case, the condition for setting the reflection at wavelength λ 0 to 0 is N=n 1 2 . However, in reality, it is necessary to deviate from the condition of N=n 1 2 because it is desired to prevent reflection in a wide wavelength range even if some residual reflection remains. Since this amount of deviation is a function of the refractive index of the second layer, if this function is f 1 , then the virtual refractive index N is expressed as N=n 1 2 +f 1 (n 2 ). Next, considering the case where the second layer is a non-uniform film, the virtual refractive index N is given as a first approximation: n 2 = (n H + n L )/2 n H : Refractive index on the third layer side nL : This is the refractive index on the first layer side of the second layer of heterogeneous film, but the amount of deviation depends on the degree of heterogeneity, that is, the magnitude of the difference between nH and nL . Considering this, the virtual refractive index N is (n H +n L )/
2, and f 1 , f 2 which are the functions of (n H −n L ), respectively.
is expressed by the following formula. In addition, 4 shown here
The second layer of an anti-reflection coating is generally considered to have a high refractive index, and empirically the refractive index of the upper part of the heterogeneous layer that occurs when practical materials are laminated to a thickness of λ/2 is 2.0. 2.35, and Δn 2 =n H −n L , which indicates the degree of heterogeneity, is about 0.05 to 0.35. N=n 1 2 + f 1 (n H + n L /2) + f 2 (n H − n L ) The functions f 1 and f 2 in the above equation cannot be determined mathematically and must be found inductively. do not have. Therefore, in the present invention, the first layer is MgF 2 with n 1 2 ≒ 1.91, and the above-mentioned
Perform simulations by varying n H and n L ,
It has been confirmed that in order to reduce residual reflection in the entire visible range, the functions f 1 and f 2 can be approximated by the following formulas. f 1 (n H +n L /2)≒−1.11+n H +n L /4 f 2 (n H −n L )≒n H −n L /2 Therefore, N=1.91−1.11+n H +n L /4+n H −n L /2=0.8+3n H −n L /4. Similarly, for ΔN, n 1 ; (n H + n L )/
2. It is possible that terms related to (n H −n L ) are also included,
A simulation was performed in the same manner as described above, and it was confirmed that the equation below can be approximated. ΔN=-6.7+7/4( nH + nL )-2( nH + nL )=-6.7- nH - 15nL /4 Tolerable range of deviation from standard values of N and ΔN α, β
calculated the residual reflectance and determined −0.1≦α≦0.1 −0.4≦β≦0.4 as a practical range. Next, examples of the present invention will be shown. The first example is the second example.
These are shown in the table. The second layer is TiO 2 deposited using standard methods. The third and fourth layers are successively deposited from two evaporation sources (simultaneous deposition method). FIG. 2 is a graph of residual reflection in the first embodiment. FIG. 3 is a graph of the trajectory of the amplitude reflectance of a virtual base, and it can be seen that the amplitude reflectance is equal in a fairly wide range centered around the reference wavelength λ 0 =510 nm.

【表】【table】

【表】 第2実施例は第3表に示すもので、仮想下地の
屈折率の変化率ΔNの許容範囲が残留反射にどの
ように影響するかということも示している。第4
図は第2実施例の残留反射を示すグラフである。
[Table] The second example is shown in Table 3, which also shows how the allowable range of the rate of change ΔN of the refractive index of the virtual base affects the residual reflection. Fourth
The figure is a graph showing residual reflection in the second example.

【表】【table】

【表】 第3実施例は第4表に示すもので、蒸着時の下
地温度を低くして第2層の不均質の度合を少なく
したと逆に下地温度を高くして第2層の不均質
の度合を大きくしたである。第5図に第3実施
例の残留反射を示す。
[Table] The third example is shown in Table 4. The degree of non-uniformity in the second layer was reduced by lowering the substrate temperature during vapor deposition, and conversely, the degree of non-uniformity in the second layer was reduced by increasing the substrate temperature. The degree of homogeneity is increased. FIG. 5 shows the residual reflection of the third embodiment.

【表】【table】

【表】 第4実施例は第5表に示され、符号42で示さ
れる例は、符号41で示される第4層をこれと等
価な3層膜で構成したものである(等価膜法)。
一定の屈折率の膜を得る方法として、その屈折率
よりも高い屈折率の物質と低い屈折率の物質の数
層で構成しその全体の厚さをλ0/4かまたはそれ
以下にすることが知られている。そして理論的に
は各層を薄くして層数を多くした方がよりよい近
似が得られるが、作業能率を考慮すると3層膜が
適当である。第6図に第4実施例の残留反射を示
し、第7図に第4実施例の各層における振幅反射
率の軌跡を示す。第7図において実線弧adは単
層からなる第4層の振幅反射率の軌跡を示し、点
線弧ad,bc,cdは3層により構成された第4層
の振幅反射率の軌跡を示す。実線弧de,ef,fgは
第3層、第2層、第1層の各振幅反射率の軌跡を
示す。
[Table] The fourth embodiment is shown in Table 5, and the example indicated by reference numeral 42 is one in which the fourth layer indicated by reference numeral 41 is composed of an equivalent three-layer film (equivalent film method). .
One way to obtain a film with a constant refractive index is to construct it with several layers of a material with a higher refractive index and a material with a lower refractive index than that refractive index, and make the total thickness λ 0 /4 or less. It has been known. Theoretically, a better approximation can be obtained by making each layer thinner and increasing the number of layers, but in consideration of work efficiency, a three-layer film is appropriate. FIG. 6 shows the residual reflection of the fourth embodiment, and FIG. 7 shows the trajectory of the amplitude reflectance in each layer of the fourth embodiment. In FIG. 7, the solid line arc ad shows the locus of the amplitude reflectance of the fourth layer made of a single layer, and the dotted line arcs ad, bc, and cd show the locus of the amplitude reflectance of the fourth layer made of three layers. Solid line arcs de, ef, and fg indicate the trajectories of the amplitude reflectances of the third layer, the second layer, and the first layer.

【表】【table】

【表】 第5実施例は第6表に示され、符号52で示さ
れる例は、符号51で示される第3層と第4層と
をそれぞれこれと等価な3層膜で構成したもので
ある。第8図に第5実施例の残留反射を示し、第
9図に第4実施例の各層における振幅反射率の軌
跡を示す。第9図において実線弧ad,dgは単層
からなる第4層、第3層の振幅反射率の軌跡を示
し、点線弧ab,bc,c(d)e,ef,fgは5層により
構成された第4層、第3層の振幅反射率の軌跡を
示す。実線弧gh,hiは第2層、第1層の各振幅反
射率の軌跡を示す。
[Table] The fifth embodiment is shown in Table 6, and in the example indicated by 52, the third layer and fourth layer indicated by 51 are each composed of equivalent three-layer films. be. FIG. 8 shows the residual reflection of the fifth embodiment, and FIG. 9 shows the trajectory of the amplitude reflectance in each layer of the fourth embodiment. In Fig. 9, solid line arcs ad and dg indicate the trajectory of the amplitude reflectance of the fourth and third layers consisting of a single layer, and dotted line arcs ab, bc, c(d)e, ef, fg indicate the trajectory of the amplitude reflectance of the fourth and third layers consisting of a single layer. The trajectory of the amplitude reflectance of the fourth layer and the third layer is shown. Solid line arcs gh and hi indicate the trajectories of the amplitude reflectances of the second layer and the first layer.

【表】【table】

【表】 上記の構成、実施例に示される本発明は以下の
効果を有する。 (a) 従来の3層膜構成に比べて反射防止帯の幅が
広く、また基板の屈折率に関係なくほぼ同一の
反射防止特性を有する。 (b) 第2層に不均質を使用できるので、蒸着作業
が容易で、また基板を高温にして蒸着できるた
め膜の耐久性が向上する。 (c) 基板を変えても第3層、第4層が変るだけ
で、第1層、第2層は基板に関係なく同一蒸着
をすることができる。 (d) 仮想屈折率Nの許容範囲に比べてΔNの許容
範囲の方が広いので、第4層で膜の屈折率に誤
差が生じても、第3層を蒸着する時に補正する
ことかできる。また従来屈折率の誤差が大きく
なり敬遠されがちだつた同時蒸着も可能にな
り、作業能率が向上する。
[Table] The present invention shown in the above configuration and examples has the following effects. (a) The width of the antireflection band is wider than that of the conventional three-layer film structure, and the antireflection properties are almost the same regardless of the refractive index of the substrate. (b) Since a non-uniform layer can be used for the second layer, the vapor deposition process is easy, and the durability of the film is improved since the substrate can be heated to a high temperature for vapor deposition. (c) Even if the substrate is changed, only the third and fourth layers are changed, and the first and second layers can be deposited in the same manner regardless of the substrate. (d) The tolerance range for ΔN is wider than the tolerance range for the virtual refractive index N, so even if an error occurs in the refractive index of the film in the fourth layer, it can be corrected when depositing the third layer. . In addition, simultaneous vapor deposition, which has traditionally been avoided due to large errors in refractive index, becomes possible, improving work efficiency.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は第1表に示す公知の四層反射防止膜の
残留反射を示す。第2図は第1実施例の4層反射
膜の残留反射を示す。第3図は仮想下地の振幅反
射率を示す。第4図は第2実施例の残留反射を示
す。第5図は第3実施例の残留反射を示す。第6
図は第4実施例の残留反射を示す。第7図は本発
明の各層における振幅反射率の軌跡を示す。第8
図は第5実施例の残留反射を示す。第9図は第4
実施例の各層における振幅反射率の軌跡を示す。 1……公知の理論値、2……公知の実施例、1
1,12,13……第1実施例、21,22,2
3……第2実施例、31,32……第3実施例、
41,42……第4実施例、51,52……第5
実施例。
FIG. 1 shows the residual reflection of the known four-layer antireflection coating shown in Table 1. FIG. 2 shows the residual reflection of the four-layer reflective film of the first example. FIG. 3 shows the amplitude reflectance of the virtual base. FIG. 4 shows the residual reflection of the second embodiment. FIG. 5 shows the residual reflection of the third embodiment. 6th
The figure shows the residual reflection of the fourth embodiment. FIG. 7 shows the trajectory of amplitude reflectance in each layer of the present invention. 8th
The figure shows the residual reflection of the fifth embodiment. Figure 9 is the fourth
3 shows the locus of amplitude reflectance in each layer of the example. 1...Known theoretical value, 2...Known example, 1
1, 12, 13...first example, 21, 22, 2
3...Second Example, 31,32...Third Example,
41, 42...Fourth example, 51, 52...Fifth example
Example.

Claims (1)

【特許請求の範囲】 1 反射防止しようとする波長範囲内の基準波長
をλ0、媒体から基板に向つて第1層乃至第4層と
し、第1層が光学的膜厚λ0/4、第2層が光学的
膜厚λ0/2、第3層、第4層がそれぞれ光学的膜
厚λ0/4に構成して合成して基板反射調整膜とな
る4層反射防止膜において、 第1層がMgF2、第2層が不均質膜であり、該
第2層の不均質膜の第3層側の屈折率をnH、第1
層側の屈折率をnL、第3層、第4層の平均屈折率
をn3,n4、基板の屈折率をnSとするとき、 2.0≦nL≦2.35 0.05≦Δn2≦0.35 Δn2=nH−nL nSn3 2/n4 2=0.8+3nH−nL/4+α −0.1≦α≦0.1 n3(n3+n4)(nS 2n3−n4 3)/n4 4 =15nL−nH/4−6.7+β −0.4≦β≦0.4 α:第3層、第4層及び基板の合成による反射と
等しい反射を有する仮想下地を考えた場合の、
仮想下地の基準波長λ0での仮想屈折率の許容範
囲 β:仮想下地の仮想屈折率の波長に対する変化率
の許容範囲 の関係を有することを特徴とする多層反射防止
膜。 2 上記第3層及び第4層の一方又は双方をそれ
と等価な効果を有する層膜により形成したことを
特徴とする特許請求第1項記載の多層反射防止
膜。
[Claims] 1. The reference wavelength within the wavelength range in which reflection is to be prevented is λ 0 , and the first to fourth layers are formed from the medium to the substrate, and the first layer has an optical thickness of λ 0 /4, In a four-layer anti-reflection film in which the second layer has an optical thickness λ 0 /2, and the third and fourth layers each have an optical thickness λ 0 /4 and are combined to form a substrate reflection adjustment film, The first layer is MgF 2 , the second layer is a heterogeneous film, and the refractive index of the third layer side of the second layer heterogeneous film is n H , and the first layer is MgF 2 .
When the refractive index of the layer side is n L , the average refractive index of the third and fourth layers is n 3 , n 4 , and the refractive index of the substrate is n S , 2.0≦n L ≦2.35 0.05≦Δn 2 ≦0.35 Δn 2 =n H −n L n S n 3 2 /n 4 2 =0.8+3n H −n L /4+α −0.1≦α≦0.1 n 3 (n 3 +n 4 ) (n S 2 n 3 −n 4 3 )/n 4 4 = 15n L −n H /4−6.7+β −0.4≦β≦0.4 α: When considering a virtual base having a reflection equal to that due to the combination of the third layer, fourth layer, and substrate,
A multilayer anti-reflection film characterized in that the tolerance range β of the virtual refractive index at the reference wavelength λ 0 of the virtual base is the permissible range β of the change rate of the virtual refractive index of the virtual base with respect to the wavelength. 2. The multilayer antireflection film according to claim 1, wherein one or both of the third layer and the fourth layer is formed of a layered film having an effect equivalent to that of the third layer and the fourth layer.
JP1223680A 1980-02-04 1980-02-04 Multilayer reflection-preventive film Granted JPS56109301A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1223680A JPS56109301A (en) 1980-02-04 1980-02-04 Multilayer reflection-preventive film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1223680A JPS56109301A (en) 1980-02-04 1980-02-04 Multilayer reflection-preventive film

Publications (2)

Publication Number Publication Date
JPS56109301A JPS56109301A (en) 1981-08-29
JPS648801B2 true JPS648801B2 (en) 1989-02-15

Family

ID=11799728

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1223680A Granted JPS56109301A (en) 1980-02-04 1980-02-04 Multilayer reflection-preventive film

Country Status (1)

Country Link
JP (1) JPS56109301A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0693042B2 (en) * 1988-08-24 1994-11-16 松下電器産業株式会社 Anti-reflection film
JPH07119844B2 (en) * 1990-10-31 1995-12-20 ホーヤ株式会社 Optical component having antireflection film
JPH07119845B2 (en) * 1990-11-27 1995-12-20 ホーヤ株式会社 Optical components

Also Published As

Publication number Publication date
JPS56109301A (en) 1981-08-29

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