JPS6488548A - Toner composition - Google Patents

Toner composition

Info

Publication number
JPS6488548A
JPS6488548A JP24658087A JP24658087A JPS6488548A JP S6488548 A JPS6488548 A JP S6488548A JP 24658087 A JP24658087 A JP 24658087A JP 24658087 A JP24658087 A JP 24658087A JP S6488548 A JPS6488548 A JP S6488548A
Authority
JP
Japan
Prior art keywords
peeling
water
composition
photoresist films
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24658087A
Other languages
English (en)
Other versions
JP2631849B2 (ja
Inventor
Shinichiro Shiozu
Masaru Sugita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NAGASE DENSHI KAGAKU KK
Original Assignee
NAGASE DENSHI KAGAKU KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NAGASE DENSHI KAGAKU KK filed Critical NAGASE DENSHI KAGAKU KK
Priority to JP62246580A priority Critical patent/JP2631849B2/ja
Publication of JPS6488548A publication Critical patent/JPS6488548A/ja
Application granted granted Critical
Publication of JP2631849B2 publication Critical patent/JP2631849B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Detergent Compositions (AREA)
JP62246580A 1987-09-30 1987-09-30 剥離剤組成物 Expired - Lifetime JP2631849B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62246580A JP2631849B2 (ja) 1987-09-30 1987-09-30 剥離剤組成物

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62246580A JP2631849B2 (ja) 1987-09-30 1987-09-30 剥離剤組成物

Publications (2)

Publication Number Publication Date
JPS6488548A true JPS6488548A (en) 1989-04-03
JP2631849B2 JP2631849B2 (ja) 1997-07-16

Family

ID=17150533

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62246580A Expired - Lifetime JP2631849B2 (ja) 1987-09-30 1987-09-30 剥離剤組成物

Country Status (1)

Country Link
JP (1) JP2631849B2 (ja)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0457898A (ja) * 1990-06-27 1992-02-25 Kao Corp 水系洗浄剤組成物
US5507978A (en) * 1995-05-08 1996-04-16 Ocg Microelectronic Materials, Inc. Novolak containing photoresist stripper composition
US5545353A (en) * 1995-05-08 1996-08-13 Ocg Microelectronic Materials, Inc. Non-corrosive photoresist stripper composition
US5561105A (en) * 1995-05-08 1996-10-01 Ocg Microelectronic Materials, Inc. Chelating reagent containing photoresist stripper composition
US5597678A (en) * 1994-04-18 1997-01-28 Ocg Microelectronic Materials, Inc. Non-corrosive photoresist stripper composition
US5612304A (en) * 1995-07-07 1997-03-18 Olin Microelectronic Chemicals, Inc. Redox reagent-containing post-etch residue cleaning composition
US5648324A (en) * 1996-01-23 1997-07-15 Ocg Microelectronic Materials, Inc. Photoresist stripping composition
EP0788143A2 (en) 1996-02-05 1997-08-06 Mitsubishi Gas Chemical Company, Inc. Method of producing semiconductor device and rinse for cleaning semiconductor device
US5665688A (en) * 1996-01-23 1997-09-09 Olin Microelectronics Chemicals, Inc. Photoresist stripping composition
JPH09298201A (ja) * 1996-04-30 1997-11-18 Nec Corp 配線パターンの形成方法
US5759973A (en) * 1996-09-06 1998-06-02 Olin Microelectronic Chemicals, Inc. Photoresist stripping and cleaning compositions
US5780406A (en) * 1996-09-06 1998-07-14 Honda; Kenji Non-corrosive cleaning composition for removing plasma etching residues
US5817610A (en) * 1996-09-06 1998-10-06 Olin Microelectronic Chemicals, Inc. Non-corrosive cleaning composition for removing plasma etching residues
US6030932A (en) * 1996-09-06 2000-02-29 Olin Microelectronic Chemicals Cleaning composition and method for removing residues
US6265309B1 (en) 1998-05-14 2001-07-24 Mitsubishi Gas Chemicals Co., Inc. Cleaning agent for use in producing semiconductor devices and process for producing semiconductor devices using the same
US6326130B1 (en) * 1993-10-07 2001-12-04 Mallinckrodt Baker, Inc. Photoresist strippers containing reducing agents to reduce metal corrosion
US6372050B2 (en) 1997-05-05 2002-04-16 Arch Specialty Chemicals, Inc. Non-corrosive stripping and cleaning composition
US6413923B2 (en) 1999-11-15 2002-07-02 Arch Specialty Chemicals, Inc. Non-corrosive cleaning composition for removing plasma etching residues
JP2017182049A (ja) * 2016-03-28 2017-10-05 三菱製紙株式会社 剥離方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57165834A (en) * 1981-04-06 1982-10-13 Hitachi Chem Co Ltd Peeling solution for cured film of photopolymerizing composition
JPS6026945A (ja) * 1983-07-25 1985-02-09 ジエイ・テイ・ベ−カ−・ケミカル・カンパニ− ストリツピング組成物及びレジストをストリツピングする方法
JPS6249355A (ja) * 1985-08-10 1987-03-04 Nagase Sangyo Kk 剥離剤組成物

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57165834A (en) * 1981-04-06 1982-10-13 Hitachi Chem Co Ltd Peeling solution for cured film of photopolymerizing composition
JPS6026945A (ja) * 1983-07-25 1985-02-09 ジエイ・テイ・ベ−カ−・ケミカル・カンパニ− ストリツピング組成物及びレジストをストリツピングする方法
JPS6249355A (ja) * 1985-08-10 1987-03-04 Nagase Sangyo Kk 剥離剤組成物

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0457898A (ja) * 1990-06-27 1992-02-25 Kao Corp 水系洗浄剤組成物
US6749998B2 (en) 1993-10-07 2004-06-15 Mallinckrodt Baker Inc. Photoresist strippers containing reducing agents to reduce metal corrosion
US6326130B1 (en) * 1993-10-07 2001-12-04 Mallinckrodt Baker, Inc. Photoresist strippers containing reducing agents to reduce metal corrosion
US5597678A (en) * 1994-04-18 1997-01-28 Ocg Microelectronic Materials, Inc. Non-corrosive photoresist stripper composition
US5507978A (en) * 1995-05-08 1996-04-16 Ocg Microelectronic Materials, Inc. Novolak containing photoresist stripper composition
US5545353A (en) * 1995-05-08 1996-08-13 Ocg Microelectronic Materials, Inc. Non-corrosive photoresist stripper composition
US5561105A (en) * 1995-05-08 1996-10-01 Ocg Microelectronic Materials, Inc. Chelating reagent containing photoresist stripper composition
US5612304A (en) * 1995-07-07 1997-03-18 Olin Microelectronic Chemicals, Inc. Redox reagent-containing post-etch residue cleaning composition
US5648324A (en) * 1996-01-23 1997-07-15 Ocg Microelectronic Materials, Inc. Photoresist stripping composition
US5665688A (en) * 1996-01-23 1997-09-09 Olin Microelectronics Chemicals, Inc. Photoresist stripping composition
EP0788143A2 (en) 1996-02-05 1997-08-06 Mitsubishi Gas Chemical Company, Inc. Method of producing semiconductor device and rinse for cleaning semiconductor device
JPH09298201A (ja) * 1996-04-30 1997-11-18 Nec Corp 配線パターンの形成方法
US5817610A (en) * 1996-09-06 1998-10-06 Olin Microelectronic Chemicals, Inc. Non-corrosive cleaning composition for removing plasma etching residues
US6020292A (en) * 1996-09-06 2000-02-01 Olin Microelectronic Chemicals, Inc. Non-corrosive cleaning composition for removing plasma etching residues
US6030932A (en) * 1996-09-06 2000-02-29 Olin Microelectronic Chemicals Cleaning composition and method for removing residues
US6191086B1 (en) 1996-09-06 2001-02-20 Arch Specialty Chemicals, Inc. Cleaning composition and method for removing residues
US5780406A (en) * 1996-09-06 1998-07-14 Honda; Kenji Non-corrosive cleaning composition for removing plasma etching residues
US5759973A (en) * 1996-09-06 1998-06-02 Olin Microelectronic Chemicals, Inc. Photoresist stripping and cleaning compositions
US6372050B2 (en) 1997-05-05 2002-04-16 Arch Specialty Chemicals, Inc. Non-corrosive stripping and cleaning composition
US6265309B1 (en) 1998-05-14 2001-07-24 Mitsubishi Gas Chemicals Co., Inc. Cleaning agent for use in producing semiconductor devices and process for producing semiconductor devices using the same
US6413923B2 (en) 1999-11-15 2002-07-02 Arch Specialty Chemicals, Inc. Non-corrosive cleaning composition for removing plasma etching residues
US7001874B2 (en) 1999-11-15 2006-02-21 Arch Specialty Chemicals, Inc. Non-corrosive cleaning composition for removing plasma etching residues
US7402552B2 (en) 1999-11-15 2008-07-22 Fujifilm Electronic Materials U.S.A., Inc. Non-corrosive cleaning composition for removing plasma etching residues
JP2017182049A (ja) * 2016-03-28 2017-10-05 三菱製紙株式会社 剥離方法

Also Published As

Publication number Publication date
JP2631849B2 (ja) 1997-07-16

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