JPS6489357A - Construction of resistance pattern in monolithic ic - Google Patents

Construction of resistance pattern in monolithic ic

Info

Publication number
JPS6489357A
JPS6489357A JP24716587A JP24716587A JPS6489357A JP S6489357 A JPS6489357 A JP S6489357A JP 24716587 A JP24716587 A JP 24716587A JP 24716587 A JP24716587 A JP 24716587A JP S6489357 A JPS6489357 A JP S6489357A
Authority
JP
Japan
Prior art keywords
resistors
layer
polycrystalline
monolithic
construction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24716587A
Other languages
Japanese (ja)
Other versions
JPH0620111B2 (en
Inventor
Noboru Kusama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP24716587A priority Critical patent/JPH0620111B2/en
Publication of JPS6489357A publication Critical patent/JPS6489357A/en
Publication of JPH0620111B2 publication Critical patent/JPH0620111B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To eliminate an increase in a capacity due to fringing effect by forming two layers of polycrystalline Si resistors, connecting the resistors of the layers in parallel, and providing the resistor of the other layer in a gap of the resistor of one layer. CONSTITUTION:Polycrystalline Si resistors 1-3 of high layer side and polycrystalline Si resistors 4, 5 of low layer side are connected in parallel with aluminum wiring layers 16, 17 through contacts 6-11 and 12-15. In this case, the resistors 4, 5 and contacts 7, 10, 12-15 are provided in the gaps of the resistors 1-3 of the other layer. Since the resistors of the other layer exist in the gaps of the resistors for generating fringing effect, an increase in the capacity due to the fringing effect is eliminated.
JP24716587A 1987-09-29 1987-09-29 Monolithic IC Expired - Lifetime JPH0620111B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24716587A JPH0620111B2 (en) 1987-09-29 1987-09-29 Monolithic IC

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24716587A JPH0620111B2 (en) 1987-09-29 1987-09-29 Monolithic IC

Publications (2)

Publication Number Publication Date
JPS6489357A true JPS6489357A (en) 1989-04-03
JPH0620111B2 JPH0620111B2 (en) 1994-03-16

Family

ID=17159405

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24716587A Expired - Lifetime JPH0620111B2 (en) 1987-09-29 1987-09-29 Monolithic IC

Country Status (1)

Country Link
JP (1) JPH0620111B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5422298A (en) * 1991-09-26 1995-06-06 Sgs-Thomson Microelectronics, S.A. Method of manufacturing a precision integrated resistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5422298A (en) * 1991-09-26 1995-06-06 Sgs-Thomson Microelectronics, S.A. Method of manufacturing a precision integrated resistor

Also Published As

Publication number Publication date
JPH0620111B2 (en) 1994-03-16

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