JPS6489446A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6489446A JPS6489446A JP24424587A JP24424587A JPS6489446A JP S6489446 A JPS6489446 A JP S6489446A JP 24424587 A JP24424587 A JP 24424587A JP 24424587 A JP24424587 A JP 24424587A JP S6489446 A JPS6489446 A JP S6489446A
- Authority
- JP
- Japan
- Prior art keywords
- ions
- wiring
- interface
- layers
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title 1
- 150000002500 ions Chemical class 0.000 abstract 7
- 229910021332 silicide Inorganic materials 0.000 abstract 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 5
- 239000002184 metal Substances 0.000 abstract 3
- 229910052751 metal Inorganic materials 0.000 abstract 3
- 238000005468 ion implantation Methods 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 229910018125 Al-Si Inorganic materials 0.000 abstract 1
- 229910018520 Al—Si Inorganic materials 0.000 abstract 1
- 239000002390 adhesive tape Substances 0.000 abstract 1
- 238000000137 annealing Methods 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To prevent shortcomings such as junction breakdown, occurrence of leaking current and the complication of the manufacturing process, by forming metal silicide including the hole part in a wiring part, setting the range of ions at the interface between the silicide and an insulating film, implanting ions, and forming physical mixed layers of both layers at the interface between a wiring material and the insulating film. CONSTITUTION:A transistor and the like are formed through ordinary steps. A wiring hole 4 is formed in an intermediate insulating film 3 comprising PSG on the transistor and the like. Metal silicide 5 is further evaporated. The range of ions is set at an interface between the silicide 5 and the intermediate film 3 for a diffused layer 6 at a wiring hole part. Ions are implanted 7. Mixed layers 8 of both layers are grown at the interface. The ions are implanted into the diffused layer 6, too. Annealing is performed in order to recover the crystal deffect caused by the ion implantation. Thereafter, an Al-Si layer comprising lower wiring material is sputtered, and wiring is performed. In the obtained wiring, the metal silicide film is not released even if adhesive tape is stuck and removed. Therefore adhesion is improved. As the ions for said ion implantation, Si and Ge among B, Si, P, Ga, Ge and As or the ions indicating the same conductivity as that of the diffused layer are used.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24424587A JPS6489446A (en) | 1987-09-30 | 1987-09-30 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24424587A JPS6489446A (en) | 1987-09-30 | 1987-09-30 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6489446A true JPS6489446A (en) | 1989-04-03 |
Family
ID=17115889
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24424587A Pending JPS6489446A (en) | 1987-09-30 | 1987-09-30 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6489446A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0496325A (en) * | 1990-08-13 | 1992-03-27 | Oki Electric Ind Co Ltd | Impurity diffusion layer |
| JPH056995A (en) * | 1991-06-27 | 1993-01-14 | Nec Corp | High melting point metal silicide film and its formation method |
| US5210043A (en) * | 1989-09-26 | 1993-05-11 | Seiko Instruments Inc. | Process for producing semiconductor device |
-
1987
- 1987-09-30 JP JP24424587A patent/JPS6489446A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5210043A (en) * | 1989-09-26 | 1993-05-11 | Seiko Instruments Inc. | Process for producing semiconductor device |
| JPH0496325A (en) * | 1990-08-13 | 1992-03-27 | Oki Electric Ind Co Ltd | Impurity diffusion layer |
| JPH056995A (en) * | 1991-06-27 | 1993-01-14 | Nec Corp | High melting point metal silicide film and its formation method |
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