JPS649639A - Manufacture of insulating film for element isolation of semiconductor device - Google Patents
Manufacture of insulating film for element isolation of semiconductor deviceInfo
- Publication number
- JPS649639A JPS649639A JP16603687A JP16603687A JPS649639A JP S649639 A JPS649639 A JP S649639A JP 16603687 A JP16603687 A JP 16603687A JP 16603687 A JP16603687 A JP 16603687A JP S649639 A JPS649639 A JP S649639A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- oxide film
- element isolation
- mask
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002955 isolation Methods 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 5
- 229910052710 silicon Inorganic materials 0.000 abstract 5
- 239000010703 silicon Substances 0.000 abstract 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 5
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 5
- 230000003647 oxidation Effects 0.000 abstract 3
- 238000007254 oxidation reaction Methods 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
Landscapes
- Element Separation (AREA)
- Local Oxidation Of Silicon (AREA)
Abstract
PURPOSE:To reduce a step between an insulating film for element isolation and a silicon substrate and to improve the reliability of a wiring formed thereon, by forming a silicon oxide film to the height of the original surface of the silicon substrate by a selective oxidation method with a silicon nitride film as a mask. CONSTITUTION:With a silicon nitride film 2 as a mask, a silicon oxide film 3, which is formed in the Figure 1, is etched away. The etching is performed until a silicon substrate 1 is completely exposed. Then, with the silicon nitride film 2 as a mask, selective oxidation is performed again by a thermal oxidation method, and a silicon oxide film 4 is formed. The thickness of the formed silicon oxide film 4 is set so that the height of the surface of the silicon oxide film 4 becomes the height of the original surface of the silicon substrate 1, i.e., the height of the boundary between the silicon substrate 1 and the silicon nitride 2. Thereafter, when the silicon nitride film 2, which is used as a mask, is removed, a flat insulating film for element isolation is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16603687A JPS649639A (en) | 1987-07-01 | 1987-07-01 | Manufacture of insulating film for element isolation of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16603687A JPS649639A (en) | 1987-07-01 | 1987-07-01 | Manufacture of insulating film for element isolation of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS649639A true JPS649639A (en) | 1989-01-12 |
Family
ID=15823759
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16603687A Pending JPS649639A (en) | 1987-07-01 | 1987-07-01 | Manufacture of insulating film for element isolation of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS649639A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100401529B1 (en) * | 1996-06-03 | 2003-12-31 | 주식회사 하이닉스반도체 | Method for forming field oxide film of semiconductor device |
-
1987
- 1987-07-01 JP JP16603687A patent/JPS649639A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100401529B1 (en) * | 1996-06-03 | 2003-12-31 | 주식회사 하이닉스반도체 | Method for forming field oxide film of semiconductor device |
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