JPS649664A - Semiconductor pressure sensor - Google Patents
Semiconductor pressure sensorInfo
- Publication number
- JPS649664A JPS649664A JP16395687A JP16395687A JPS649664A JP S649664 A JPS649664 A JP S649664A JP 16395687 A JP16395687 A JP 16395687A JP 16395687 A JP16395687 A JP 16395687A JP S649664 A JPS649664 A JP S649664A
- Authority
- JP
- Japan
- Prior art keywords
- strain
- causing part
- piezoresistors
- rigidity
- strain causing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 239000013078 crystal Substances 0.000 abstract 2
- 230000002093 peripheral effect Effects 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
PURPOSE:To avert the effect of bonding strain and thermal strain by a method wherein recessions in different depth are provided on one surface of a semiconductor single crystal substrate to form a structure comprising strain causing parts in different rigidity, i.e., the first strain causing part in low rigidity and the second strain causing part in high rigidity. CONSTITUTION:A deep circular recessions with the center of a semiconductor single crystal substrate 1 such as silicon is provided on one surface of the substrate 1 to form the first strain causing part 21 in low rigidity. Then a less deep ring type recession is provided on the same surface to form the second strain causing part 22 in high rigidity. A piezoresistor 31 to measure the pressure in the measured region is formed on the other peripheral surface of the first starin causing part 21. For example, four each of piezoresistors 31 are formed at the interval of 90 degrees. Furthermore, the other piezoresistors 32 to measure the pressure exceeding the measured region are formed respectively corresponding to the piezoresistors 31 on the other peripheral surface of the strain causing part 22. In such a constitution, the piezoresistors 31, 32 are electrically connected to aluminium electrodes 17, 27 through the intermediary of a low resistance layer 41.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16395687A JPS649664A (en) | 1987-07-02 | 1987-07-02 | Semiconductor pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16395687A JPS649664A (en) | 1987-07-02 | 1987-07-02 | Semiconductor pressure sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS649664A true JPS649664A (en) | 1989-01-12 |
Family
ID=15784017
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16395687A Pending JPS649664A (en) | 1987-07-02 | 1987-07-02 | Semiconductor pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS649664A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02256278A (en) * | 1987-04-10 | 1990-10-17 | Mitsubishi Electric Corp | Semiconductor pressure sensor |
-
1987
- 1987-07-02 JP JP16395687A patent/JPS649664A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02256278A (en) * | 1987-04-10 | 1990-10-17 | Mitsubishi Electric Corp | Semiconductor pressure sensor |
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