JPS649878A - Bonding between silicon nitride ceramics and metal - Google Patents

Bonding between silicon nitride ceramics and metal

Info

Publication number
JPS649878A
JPS649878A JP62163988A JP16398887A JPS649878A JP S649878 A JPS649878 A JP S649878A JP 62163988 A JP62163988 A JP 62163988A JP 16398887 A JP16398887 A JP 16398887A JP S649878 A JPS649878 A JP S649878A
Authority
JP
Japan
Prior art keywords
si3n4
vacuum
metal
torr
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62163988A
Other languages
Japanese (ja)
Other versions
JPH0472793B2 (en
Inventor
Hirohiko Nakada
Masaaki Honda
Masaya Miyake
Takeya Motoyoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP62163988A priority Critical patent/JPS649878A/en
Publication of JPS649878A publication Critical patent/JPS649878A/en
Publication of JPH0472793B2 publication Critical patent/JPH0472793B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Pressure Welding/Diffusion-Bonding (AREA)
  • Ceramic Products (AREA)

Abstract

PURPOSE:To accomplish bonding of the titled metal useful for engine parts, etc., at low cost and in high toughness and reliability, by vapor deposition of metals including Ti on the surface of Si3N4 in a vacuum, carrying out heat treatment followed by reaction between the resulting Si3N4 and a metal through mutual contact in a vacuum again. CONSTITUTION:Respective metals Ti, Cu and Ag are brought to vapor deposition on the surface of a Si3N4 ceramics in an ion plating device under a vacuum of <=1X10<-5>Torr so as to result in the thickness of 0.1-5.0mum, followed by heat treatment at 700-1,000 deg.C under a vacuum of <=1X10<-3>Torr. Thence, the resulting Si3N4 thus metallized and a metal are brought to mutual bonding under a vacuum of <=1X10<-3>Torr, thus obtaining the objective Si3N4/metal composite having a bond strength of >=26kg/mm<2> with little strength drop even at temperatures >=400 deg.C.
JP62163988A 1987-07-02 1987-07-02 Bonding between silicon nitride ceramics and metal Granted JPS649878A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62163988A JPS649878A (en) 1987-07-02 1987-07-02 Bonding between silicon nitride ceramics and metal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62163988A JPS649878A (en) 1987-07-02 1987-07-02 Bonding between silicon nitride ceramics and metal

Publications (2)

Publication Number Publication Date
JPS649878A true JPS649878A (en) 1989-01-13
JPH0472793B2 JPH0472793B2 (en) 1992-11-19

Family

ID=15784626

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62163988A Granted JPS649878A (en) 1987-07-02 1987-07-02 Bonding between silicon nitride ceramics and metal

Country Status (1)

Country Link
JP (1) JPS649878A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05117842A (en) * 1991-10-25 1993-05-14 Ulvac Japan Ltd Joining method of metal and ceramics
JPH0632669A (en) * 1992-07-15 1994-02-08 Toshiba Corp Joined body, metallized body, and method for manufacturing metallized body
JP2006522454A (en) * 2003-03-30 2006-09-28 リットン・システムズ・インコーポレイテッド Microchannel plate diffusion bonding method
KR20170048999A (en) * 2015-10-27 2017-05-10 주식회사 아모센스 Ceramic Board Manufacturing Method and Ceramic Board manufactured by thereof
JP2020145335A (en) * 2019-03-07 2020-09-10 株式会社Ｆｊコンポジット Manufacturing method of circuit substrate

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60177635A (en) * 1984-02-24 1985-09-11 Toshiba Corp Manufacture of good heat conductive substrate
JPS63190773A (en) * 1987-02-02 1988-08-08 住友電気工業株式会社 Ceramics and metal joint with excellent bonding strength

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60177635A (en) * 1984-02-24 1985-09-11 Toshiba Corp Manufacture of good heat conductive substrate
JPS63190773A (en) * 1987-02-02 1988-08-08 住友電気工業株式会社 Ceramics and metal joint with excellent bonding strength

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05117842A (en) * 1991-10-25 1993-05-14 Ulvac Japan Ltd Joining method of metal and ceramics
JPH0632669A (en) * 1992-07-15 1994-02-08 Toshiba Corp Joined body, metallized body, and method for manufacturing metallized body
JP2006522454A (en) * 2003-03-30 2006-09-28 リットン・システムズ・インコーポレイテッド Microchannel plate diffusion bonding method
EP1617966A4 (en) * 2003-03-30 2008-09-10 Litton Systems Inc Diffusion bonding method for microchannel plates
KR20170048999A (en) * 2015-10-27 2017-05-10 주식회사 아모센스 Ceramic Board Manufacturing Method and Ceramic Board manufactured by thereof
JP2020145335A (en) * 2019-03-07 2020-09-10 株式会社Ｆｊコンポジット Manufacturing method of circuit substrate

Also Published As

Publication number Publication date
JPH0472793B2 (en) 1992-11-19

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term