JPWO2020136464A1 - - Google Patents

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Publication number
JPWO2020136464A1
JPWO2020136464A1 JP2020561966A JP2020561966A JPWO2020136464A1 JP WO2020136464 A1 JPWO2020136464 A1 JP WO2020136464A1 JP 2020561966 A JP2020561966 A JP 2020561966A JP 2020561966 A JP2020561966 A JP 2020561966A JP WO2020136464 A1 JPWO2020136464 A1 JP WO2020136464A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2020561966A
Other languages
Japanese (ja)
Other versions
JPWO2020136464A5 (2
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2020136464A1 publication Critical patent/JPWO2020136464A1/ja
Publication of JPWO2020136464A5 publication Critical patent/JPWO2020136464A5/ja
Priority to JP2024145948A priority Critical patent/JP7789867B2/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2020561966A 2018-12-28 2019-11-15 Withdrawn JPWO2020136464A1 (2)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024145948A JP7789867B2 (ja) 2018-12-28 2024-08-27 メモリデバイス

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018248460 2018-12-28
PCT/IB2019/059811 WO2020136464A1 (ja) 2018-12-28 2019-11-15 メモリデバイス、当該メモリデバイスを有する半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024145948A Division JP7789867B2 (ja) 2018-12-28 2024-08-27 メモリデバイス

Publications (2)

Publication Number Publication Date
JPWO2020136464A1 true JPWO2020136464A1 (2) 2020-07-02
JPWO2020136464A5 JPWO2020136464A5 (2) 2022-10-14

Family

ID=71126903

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2020561966A Withdrawn JPWO2020136464A1 (2) 2018-12-28 2019-11-15
JP2024145948A Active JP7789867B2 (ja) 2018-12-28 2024-08-27 メモリデバイス

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2024145948A Active JP7789867B2 (ja) 2018-12-28 2024-08-27 メモリデバイス

Country Status (5)

Country Link
US (1) US12063770B2 (2)
JP (2) JPWO2020136464A1 (2)
KR (1) KR102923216B1 (2)
TW (1) TWI861028B (2)
WO (1) WO2020136464A1 (2)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11271036B2 (en) * 2020-06-24 2022-03-08 Sandisk Technologies Llc Memory device containing dual etch stop layers for selector elements and method of making the same
DE102021122723A1 (de) 2020-09-03 2022-03-03 Lg Display Co., Ltd. Anzeigevorrichtung
US12113115B2 (en) 2021-02-09 2024-10-08 Taiwan Semiconductor Manufacturing Company Limited Thin film transistor including a compositionally-graded gate dielectric and methods for forming the same
US11984508B2 (en) * 2021-02-24 2024-05-14 Taiwan Semiconductor Manufacturing Company Limited Thin film transistor including a compositionally-modulated active region and methods for forming the same
JP2023136275A (ja) * 2022-03-16 2023-09-29 キオクシア株式会社 半導体装置及び半導体記憶装置
JP2023180895A (ja) * 2022-06-10 2023-12-21 キオクシア株式会社 半導体装置及び半導体記憶装置
CN121773717A (zh) * 2023-08-10 2026-03-31 株式会社半导体能源研究所 半导体装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016131253A (ja) * 2011-03-03 2016-07-21 株式会社半導体エネルギー研究所 半導体装置
WO2017158465A1 (ja) * 2016-03-18 2017-09-21 株式会社半導体エネルギー研究所 記憶装置
WO2018167601A1 (ja) * 2017-03-13 2018-09-20 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
WO2018178793A1 (ja) * 2017-03-29 2018-10-04 株式会社半導体エネルギー研究所 半導体装置、半導体装置の作製方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1140772A (ja) 1997-07-22 1999-02-12 Mitsubishi Electric Corp 半導体装置及びその製造方法
US7898893B2 (en) * 2007-09-12 2011-03-01 Samsung Electronics Co., Ltd. Multi-layered memory devices
JP6105266B2 (ja) 2011-12-15 2017-03-29 株式会社半導体エネルギー研究所 記憶装置
KR102207028B1 (ko) * 2012-12-03 2021-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102548001B1 (ko) * 2015-07-08 2023-06-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US9773919B2 (en) * 2015-08-26 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2017187301A1 (en) * 2016-04-28 2017-11-02 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device, and electronic device
KR102330605B1 (ko) * 2016-06-22 2021-11-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US10615187B2 (en) * 2016-07-27 2020-04-07 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device, and electronic device
US10504925B2 (en) * 2016-08-08 2019-12-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
KR102384624B1 (ko) * 2016-10-21 2022-04-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP2018206841A (ja) * 2017-05-31 2018-12-27 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016131253A (ja) * 2011-03-03 2016-07-21 株式会社半導体エネルギー研究所 半導体装置
WO2017158465A1 (ja) * 2016-03-18 2017-09-21 株式会社半導体エネルギー研究所 記憶装置
WO2018167601A1 (ja) * 2017-03-13 2018-09-20 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
WO2018178793A1 (ja) * 2017-03-29 2018-10-04 株式会社半導体エネルギー研究所 半導体装置、半導体装置の作製方法

Also Published As

Publication number Publication date
TW202027232A (zh) 2020-07-16
TWI861028B (zh) 2024-11-11
JP2024164220A (ja) 2024-11-26
JP7789867B2 (ja) 2025-12-22
KR102923216B1 (ko) 2026-02-04
US20220139917A1 (en) 2022-05-05
WO2020136464A1 (ja) 2020-07-02
KR20210108967A (ko) 2021-09-03
US12063770B2 (en) 2024-08-13

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