JPWO2022158596A1 - - Google Patents
Info
- Publication number
- JPWO2022158596A1 JPWO2022158596A1 JP2022576773A JP2022576773A JPWO2022158596A1 JP WO2022158596 A1 JPWO2022158596 A1 JP WO2022158596A1 JP 2022576773 A JP2022576773 A JP 2022576773A JP 2022576773 A JP2022576773 A JP 2022576773A JP WO2022158596 A1 JPWO2022158596 A1 JP WO2022158596A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
- H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
- H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021009883 | 2021-01-25 | ||
| JP2021009883 | 2021-01-25 | ||
| PCT/JP2022/002470 WO2022158596A1 (ja) | 2021-01-25 | 2022-01-24 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2022158596A1 true JPWO2022158596A1 (2) | 2022-07-28 |
| JP7771985B2 JP7771985B2 (ja) | 2025-11-18 |
Family
ID=82548760
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022576773A Active JP7771985B2 (ja) | 2021-01-25 | 2022-01-24 | 半導体装置 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP7771985B2 (2) |
| WO (1) | WO2022158596A1 (2) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03236280A (ja) * | 1990-02-14 | 1991-10-22 | Hitachi Ltd | 半導体装置 |
| JP2009254158A (ja) * | 2008-04-08 | 2009-10-29 | Toyota Motor Corp | スイッチング装置 |
| JP2011108684A (ja) * | 2009-11-12 | 2011-06-02 | Sumitomo Electric Ind Ltd | 半導体装置 |
| JP2013229956A (ja) * | 2012-04-24 | 2013-11-07 | Fuji Electric Co Ltd | パワー半導体モジュール |
| JP2013236507A (ja) * | 2012-05-10 | 2013-11-21 | Fuji Electric Co Ltd | パワー半導体モジュール |
| JP2017153064A (ja) * | 2015-10-23 | 2017-08-31 | インフィネオン テクノロジーズ アーゲーInfineon Technologies Ag | 半導体スイッチングデバイスおよびクランプダイオードを含む電気組立体 |
-
2022
- 2022-01-24 JP JP2022576773A patent/JP7771985B2/ja active Active
- 2022-01-24 WO PCT/JP2022/002470 patent/WO2022158596A1/ja not_active Ceased
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03236280A (ja) * | 1990-02-14 | 1991-10-22 | Hitachi Ltd | 半導体装置 |
| JP2009254158A (ja) * | 2008-04-08 | 2009-10-29 | Toyota Motor Corp | スイッチング装置 |
| JP2011108684A (ja) * | 2009-11-12 | 2011-06-02 | Sumitomo Electric Ind Ltd | 半導体装置 |
| JP2013229956A (ja) * | 2012-04-24 | 2013-11-07 | Fuji Electric Co Ltd | パワー半導体モジュール |
| JP2013236507A (ja) * | 2012-05-10 | 2013-11-21 | Fuji Electric Co Ltd | パワー半導体モジュール |
| JP2017153064A (ja) * | 2015-10-23 | 2017-08-31 | インフィネオン テクノロジーズ アーゲーInfineon Technologies Ag | 半導体スイッチングデバイスおよびクランプダイオードを含む電気組立体 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7771985B2 (ja) | 2025-11-18 |
| WO2022158596A1 (ja) | 2022-07-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20240924 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20251007 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20251020 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 7771985 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |