JPWO2024252870A1 - - Google Patents
Info
- Publication number
- JPWO2024252870A1 JPWO2024252870A1 JP2025526021A JP2025526021A JPWO2024252870A1 JP WO2024252870 A1 JPWO2024252870 A1 JP WO2024252870A1 JP 2025526021 A JP2025526021 A JP 2025526021A JP 2025526021 A JP2025526021 A JP 2025526021A JP WO2024252870 A1 JPWO2024252870 A1 JP WO2024252870A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
- H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/20—Inductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023094199 | 2023-06-07 | ||
| PCT/JP2024/017949 WO2024252870A1 (ja) | 2023-06-07 | 2024-05-15 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2024252870A1 true JPWO2024252870A1 (2) | 2024-12-12 |
| JPWO2024252870A5 JPWO2024252870A5 (2) | 2026-03-05 |
Family
ID=93795339
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025526021A Pending JPWO2024252870A1 (2) | 2023-06-07 | 2024-05-15 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20260082686A1 (2) |
| JP (1) | JPWO2024252870A1 (2) |
| CN (1) | CN121312282A (2) |
| WO (1) | WO2024252870A1 (2) |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4647194B2 (ja) * | 2003-07-14 | 2011-03-09 | 新光電気工業株式会社 | キャパシタ装置及びその製造方法 |
| JP5138260B2 (ja) * | 2006-05-19 | 2013-02-06 | 株式会社テラミクロス | チップ型電子部品 |
| JP2012038818A (ja) * | 2010-08-04 | 2012-02-23 | Toshiba Corp | 半導体装置 |
| US9153504B2 (en) * | 2013-10-11 | 2015-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Metal insulator metal capacitor and method for making the same |
| WO2016136411A1 (ja) * | 2015-02-27 | 2016-09-01 | 株式会社村田製作所 | キャパシタおよび電子機器 |
| WO2016136564A1 (ja) * | 2015-02-27 | 2016-09-01 | 株式会社村田製作所 | キャパシタ |
| US9875848B2 (en) * | 2015-12-21 | 2018-01-23 | Qualcomm Incorporated | MIM capacitor and method of making the same |
| JP6451893B2 (ja) * | 2016-03-18 | 2019-01-16 | 株式会社村田製作所 | 容量素子 |
| CN211181978U (zh) * | 2018-07-11 | 2020-08-04 | 株式会社村田制作所 | 电容元件 |
-
2024
- 2024-05-15 WO PCT/JP2024/017949 patent/WO2024252870A1/ja not_active Ceased
- 2024-05-15 CN CN202480037187.4A patent/CN121312282A/zh active Pending
- 2024-05-15 JP JP2025526021A patent/JPWO2024252870A1/ja active Pending
-
2025
- 2025-11-25 US US19/400,643 patent/US20260082686A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN121312282A (zh) | 2026-01-09 |
| US20260082686A1 (en) | 2026-03-19 |
| WO2024252870A1 (ja) | 2024-12-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20251203 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20251203 |