JPWO2024257516A1 - - Google Patents
Info
- Publication number
- JPWO2024257516A1 JPWO2024257516A1 JP2025527553A JP2025527553A JPWO2024257516A1 JP WO2024257516 A1 JPWO2024257516 A1 JP WO2024257516A1 JP 2025527553 A JP2025527553 A JP 2025527553A JP 2025527553 A JP2025527553 A JP 2025527553A JP WO2024257516 A1 JPWO2024257516 A1 JP WO2024257516A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023096347 | 2023-06-12 | ||
| PCT/JP2024/017346 WO2024257516A1 (ja) | 2023-06-12 | 2024-05-10 | 窒化物半導体発光素子及び窒化物半導体発光素子の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2024257516A1 true JPWO2024257516A1 (ja) | 2024-12-19 |
Family
ID=93851979
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025527553A Pending JPWO2024257516A1 (ja) | 2023-06-12 | 2024-05-10 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPWO2024257516A1 (ja) |
| WO (1) | WO2024257516A1 (ja) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8514904B2 (en) * | 2009-07-31 | 2013-08-20 | Nichia Corporation | Nitride semiconductor laser diode |
| JP5139555B2 (ja) * | 2011-04-22 | 2013-02-06 | 住友電気工業株式会社 | 窒化物半導体レーザ、及びエピタキシャル基板 |
| JP2013033930A (ja) * | 2011-06-29 | 2013-02-14 | Sumitomo Electric Ind Ltd | Ｉｉｉ族窒化物半導体素子、及び、ｉｉｉ族窒化物半導体素子の製造方法 |
| WO2015034865A1 (en) * | 2013-09-03 | 2015-03-12 | Sensor Electronic Technology, Inc. | Optoelectronic device with modulation doping |
| WO2021090849A1 (ja) * | 2019-11-08 | 2021-05-14 | ヌヴォトンテクノロジージャパン株式会社 | 半導体発光素子、及び半導体発光素子の製造方法 |
-
2024
- 2024-05-10 WO PCT/JP2024/017346 patent/WO2024257516A1/ja active Pending
- 2024-05-10 JP JP2025527553A patent/JPWO2024257516A1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2024257516A1 (ja) | 2024-12-19 |